公开(公告)号：US20180279484A1

公开(公告)日：2018-09-27

申请号：US15885057

申请日：2018-01-31

申请人： FUJI ELECTRIC CO., LTD.

发明人： Kenshi KAI ,  Rikihiro MARUYAMA ,  Yoshihiro MIYAZAKI

IPC分类号： H05K3/34 ,  H01L23/498 ,  H01L23/00

CPC分类号： H05K3/3415 ,  H01L23/49811 ,  H01L24/48 ,  H01L2224/4814 ,  H01L2924/13055 ,  H05K2201/10916 ,  H01L2924/00

摘要： After a contact component is disposed in a concave joint space, when a solder solidifies, the solder thickness of the solder in the joint space is kept. Thus, a contact area between the contact component and the solder is kept, and the solder thickness of the solder that joins the contact component and a conductive pattern is kept. In addition, since an appropriate amount of the solder is kept in the joint space, an extra amount of solder does not need to be applied in advance. As a result, there is prevented creeping up of the solder into a hollow hole of the contact component, caused by the heat applied when the contact component is joined to the conductive pattern.

公开(公告)号：US20170194237A1

公开(公告)日：2017-07-06

申请号：US15465433

申请日：2017-03-21

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer

IPC分类号： H01L23/495 ,  H01L23/00 ,  H02M3/158 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/49575 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05014 ,  H01L2224/05554 ,  H01L2224/0612 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1425 ,  H01L2924/1426 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H02M3/158 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2924/00

摘要： Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ “L” shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

公开(公告)号：US09685349B2

公开(公告)日：2017-06-20

申请号：US15178930

申请日：2016-06-10

申请人： The United States of America, as represented by the Secretary of the Navy

发明人： Scott A. Mathews ,  Iyoel Beniam ,  Alberto Piqué

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L24/48 ,  H01L21/4828 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/29147 ,  H01L2224/43001 ,  H01L2224/435 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/4805 ,  H01L2224/48101 ,  H01L2224/4814 ,  H01L2224/48472 ,  H01L2224/85039 ,  H01L2224/8584 ,  H01L2224/8585 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

公开(公告)号：US20230369178A1

公开(公告)日：2023-11-16

申请号：US18170159

申请日：2023-02-16

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Toshiyuki HATA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498

CPC分类号： H01L23/49513 ,  H01L24/08 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L23/49816 ,  H01L2924/182 ,  H01L2224/08055 ,  H01L2224/08113 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/4814 ,  H01L2224/4903

摘要： A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

公开(公告)号：US09929079B2

公开(公告)日：2018-03-27

申请号：US15465433

申请日：2017-03-21

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer

IPC分类号： H01L29/15 ,  H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L25/16 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H02M3/158

CPC分类号： H01L23/49575 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05014 ,  H01L2224/05554 ,  H01L2224/0612 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1425 ,  H01L2924/1426 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H02M3/158 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2924/00

摘要： Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ “L” shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.

公开(公告)号：US09443903B2

公开(公告)日：2016-09-13

申请号：US13361569

申请日：2012-01-30

申请人： Michael John Bergmann ,  Christopher D. Williams ,  Kevin Shawne Schneider ,  Kevin Haberern ,  Matthew Donofrio

发明人： Michael John Bergmann ,  Christopher D. Williams ,  Kevin Shawne Schneider ,  Kevin Haberern ,  Matthew Donofrio

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L23/00 ,  H01L25/075 ,  H01L33/40

CPC分类号： H01L27/153 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/3303 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.

摘要翻译： 发光二极管结构包括二极管区域和二极管区域上的金属堆叠。 金属堆叠包括二极管区域上的阻挡层和阻挡层上的结合层。 阻挡层在结合层和二极管区之间。 结合层包括金，锡和镍。 接合层中锡的重量百分比大于20％，接合层中的金的重量百分数小于约75％。 接合层中镍的重量百分数可以大于10％。

公开(公告)号：US20230253382A1

公开(公告)日：2023-08-10

申请号：US18162489

申请日：2023-01-31

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Kazuhito TANAKA

IPC分类号： H01L25/16 ,  H01L23/00

CPC分类号： H01L25/16 ,  H01L24/48 ,  H01L2224/4814 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/19043 ,  H01L2924/19107

摘要： A semiconductor package according to the present disclosure includes: a plurality of semiconductor chips that include a system on chip (SoC) in which a plurality of integrated circuits including a processor core and a microcomputer are integrated on a single chip; a power management integrated circuit (IC) for performing power management on the plurality of semiconductor chips; a plurality of shunt resistors each of which is mounted in series on a different one of power wires connecting the power management IC and the plurality of semiconductor chips; two output terminals; and a single selector that outputs voltages at both ends of a shunt resistor to an outside via the two output terminals, the shunt resistor being selected from among the plurality of shunt resistors. The power management IC, the plurality of semiconductor chips, the plurality of shunt resistors, and the single selector are mounted inside a single package.

公开(公告)号：US10062672B2

公开(公告)日：2018-08-28

申请号：US15315256

申请日：2015-07-20

申请人： LG Innotek Co., Ltd.

发明人： Jung Oh Lee

IPC分类号： H01L25/075 ,  H01L23/00 ,  H01L33/54 ,  H01L33/62 ,  H01L33/48 ,  H01L33/60 ,  A44C9/00 ,  A44C5/00 ,  B60R1/08 ,  B60R1/12

CPC分类号： H01L25/0753 ,  A44C5/0007 ,  A44C9/0053 ,  B60R1/088 ,  B60R1/12 ,  B60R1/1207 ,  B60R2001/1215 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L33/483 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/48105 ,  H01L2224/4814 ,  H01L2224/48228 ,  H01L2924/00014 ,  H05K1/189 ,  H05K3/284 ,  H05K2201/09227 ,  H05K2201/10106 ,  H05K2201/2054 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A light source module according to an embodiment includes: a flexible printed circuit board that has first and second pads; and a plurality of light emitting chips that are arranged on the first pads of the flexible printed circuit board, respectively, wherein the plurality of light emitting chips include a plurality of first arrays that are arranged in a first direction and second arrays that are arranged in a second direction that is different from the first direction, at least two of light emitting chips in each first array are connected to each other by the flexible printed circuit board, light emitting chips in each second array are electrically isolated from each other, the light source module further includes connection members, each of which is connected to at least one of the light emitting chips of the second array and a corresponding second pad of the flexible printed circuit board, and the connection members extend in the second direction.

公开(公告)号：US09966356B2

公开(公告)日：2018-05-08

申请号：US15489958

申请日：2017-04-18

申请人： The Goverment of the United States of America, as represented by the Secretary of the Navy

发明人： Scott A. Mathews ,  Iyoel Beniam ,  Alberto Piqué

IPC分类号： H01L21/44 ,  H01L23/00 ,  H01L21/48 ,  H01L21/768

CPC分类号： H01L24/48 ,  H01L21/4828 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/29147 ,  H01L2224/43001 ,  H01L2224/435 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/4805 ,  H01L2224/48101 ,  H01L2224/4814 ,  H01L2224/48472 ,  H01L2224/85039 ,  H01L2224/8584 ,  H01L2224/8585 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

公开(公告)号：US09318473B2

公开(公告)日：2016-04-19

申请号：US13451930

申请日：2012-04-20

申请人： Joachim Mahler ,  Khalil Hosseini ,  Edward Fuergut ,  Manfred Mengel

发明人： Joachim Mahler ,  Khalil Hosseini ,  Edward Fuergut ,  Manfred Mengel

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/16 ,  H01L23/498 ,  H01L21/56 ,  H01L23/538 ,  H01L23/29 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/16 ,  H01L21/561 ,  H01L23/295 ,  H01L23/49805 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/743 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/27312 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27422 ,  H01L2224/27438 ,  H01L2224/2784 ,  H01L2224/27848 ,  H01L2224/29076 ,  H01L2224/29078 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/30505 ,  H01L2224/3201 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33505 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48151 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83951 ,  H01L2224/92244 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In a method of manufacturing a semiconductor device, a first semiconductor element is mounted on a carrier. A b-stage curable polymer is deposited on the carrier. A second semiconductor element is affixed on the polymer.

摘要翻译： 在制造半导体器件的方法中，第一半导体元件安装在载体上。 在载体上沉积b级可固化聚合物。 第二个半导体元件固定在聚合物上。