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公开(公告)号:US08264068B2
公开(公告)日:2012-09-11
申请号:US13004960
申请日:2011-01-12
申请人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L29/40
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
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公开(公告)号:US08269352B2
公开(公告)日:2012-09-18
申请号:US13004946
申请日:2011-01-12
申请人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
摘要翻译: 多芯片堆叠封装结构包括:衬底,其具有限定在其上表面上的芯片放置区域和布置在芯片放置区域外部的多个触点; 第一芯片设置在具有后表面的芯片布置区域中,多个第一焊盘设置在有源表面上,并且多个第一凸块各自形成在第一焊盘之一上; 多个金属线将第一凸块连接到触点; 具有多个第二焊盘的第二芯片设置在所述有源表面上,并且多个第二凸块各自形成在所述第二焊盘之一上,所述第二芯片安装到所述第一芯片,其有源表面面向所述第二焊盘的有效表面 第一芯片,其中所述第二凸块分别对应地连接所述金属线和所述第一凸块。
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公开(公告)号:US20110309497A1
公开(公告)日:2011-12-22
申请号:US13004960
申请日:2011-01-12
申请人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
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公开(公告)号:US08269351B2
公开(公告)日:2012-09-18
申请号:US13004936
申请日:2011-01-12
申请人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
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公开(公告)号:US20110309496A1
公开(公告)日:2011-12-22
申请号:US13004946
申请日:2011-01-12
申请人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
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公开(公告)号:US20110309495A1
公开(公告)日:2011-12-22
申请号:US13004936
申请日:2011-01-12
申请人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
发明人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Jar-Dar Yang , Yi-Chang Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L23/13 , H01L23/3121 , H01L23/49816 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/32227 , H01L2224/451 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/73204 , H01L2224/73265 , H01L2224/85051 , H01L2224/85186 , H01L2224/85986 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being disposed on the active surface and a plurality of first bumps each being formed on one of the first pads; a plurality of metal wires connect the first bumps to the contacts; a second chip with a plurality of second pads being disposed on the active surface and a plurality of second bumps each being formed on one of the second pads, the second chip being mounted to the first chip with its active surface facing the active surface of the first chip, wherein the second bumps correspondingly connect the metal wires and the first bumps respectively.
摘要翻译: 多芯片堆叠封装结构包括:衬底,其具有限定在其上表面上的芯片放置区域和布置在芯片放置区域外部的多个触点; 第一芯片设置在具有后表面的芯片布置区域中,多个第一焊盘设置在有源表面上,并且多个第一凸块各自形成在第一焊盘之一上; 多个金属线将第一凸块连接到触点; 具有多个第二焊盘的第二芯片设置在所述有源表面上,并且多个第二凸块各自形成在所述第二焊盘之一上,所述第二芯片安装到所述第一芯片,其有源表面面向所述第二焊盘的有效表面 第一芯片,其中所述第二凸块分别对应地连接所述金属线和所述第一凸块。
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公开(公告)号:US20130069228A1
公开(公告)日:2013-03-21
申请号:US13559087
申请日:2012-07-26
申请人: An-Hong LIU , Hung-Hsin Liu , Jar-Dar Yang , Chi-Chia Huang , Yi-Chang Lee , Hsiang-Ming Huang
发明人: An-Hong LIU , Hung-Hsin Liu , Jar-Dar Yang , Chi-Chia Huang , Yi-Chang Lee , Hsiang-Ming Huang
IPC分类号: H01L23/498 , H01L21/60
CPC分类号: H01L24/16 , H01L23/49894 , H01L24/14 , H01L24/81 , H01L2224/13021 , H01L2224/14136 , H01L2224/73203 , H01L2224/81139 , H01L2224/92125
摘要: A flip-chip package structure comprising a substrate, a chip, a bump structure and a solder resist is provided. The substrate has a circuit layer disposed on the surface thereof. The chip comprises a central region and two edge regions disposed on the two sides of the central region. The bump structure is disposed on the central region of the chip and faces the substrate. The solder resist is disposed on the substrate to partially cover the circuit layer. The chip is electrically connected to the substrate by the bump structure, and the solder resist is adapted to come into contact with the two edge regions of the chip to support the chip with the bump structure when the chip is disposed on the substrate.
摘要翻译: 提供了包括衬底,芯片,凸块结构和阻焊剂的倒装芯片封装结构。 基板具有设置在其表面上的电路层。 芯片包括设置在中心区域两侧的中心区域和两个边缘区域。 凸块结构设置在芯片的中心区域并面向衬底。 阻焊剂设置在基板上以部分地覆盖电路层。 芯片通过凸块结构电连接到衬底,并且当芯片设置在衬底上时,阻焊层适于与芯片的两个边缘区域接触以支撑具有凸块结构的芯片。
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公开(公告)号:US20110291267A1
公开(公告)日:2011-12-01
申请号:US12856754
申请日:2010-08-16
申请人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Yi-Chang Lee
发明人: David Wei Wang , An-Hong Liu , Hsiang-Ming Huang , Yi-Chang Lee
IPC分类号: H01L23/498
CPC分类号: H01L23/481 , H01L21/563 , H01L21/76898 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05009 , H01L2224/0557 , H01L2224/05655 , H01L2224/05666 , H01L2224/06181 , H01L2224/11462 , H01L2224/11464 , H01L2224/13022 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/1319 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/73204 , H01L2224/81193 , H01L2224/9202 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06544 , H01L2924/0002 , H01L2924/01019 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and a through-silicon-via (TSV) electrode structure formed in each through-silicon hole. Each through-silicon-via electrode structure comprises a dielectric layer formed on the inner wall of the through-silicon hole, a barrier layer formed on the inner wall of the dielectric layer and defining a vacancy therein, a filling metal layer filled into the vacancy, a first end of the filling metal layer being lower than the first surface forming a recess, and a soft metal cap connecting to and overlaying the first end of the filling metal layer, wherein a portion of the soft metal cap is formed in the recess and the soft metal cap protrudes out of the first surface. Hence, the reliability of multi-chip stack package structure can be enhanced with the application of these soft metal caps.
摘要翻译: 半导体晶片结构包括第一表面和与第一表面相对的第二表面,形成在第一表面上的多个芯片区域,多个通孔形成在多个芯片区域中的每一个中,所述多个芯片区域连接第一表面和 第二表面和形成在每个贯通硅孔中的贯通硅通孔(TSV)电极结构。 每个贯通硅通孔电极结构包括形成在通孔的内壁上的电介质层,形成在电介质层的内壁上并在其中限定空位的阻挡层,填充到空位中的填充金属层 ,所述填充金属层的第一端低于形成凹部的第一表面;以及连接到所述填充金属层的第一端并覆盖所述填充金属层的第一端的软金属帽,其中所述软金属帽的一部分形成在所述凹部 并且软金属帽从第一表面突出。 因此,通过应用这些软金属盖,可以提高多芯片堆叠封装结构的可靠性。
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公开(公告)号:US20110291268A1
公开(公告)日:2011-12-01
申请号:US12856794
申请日:2010-08-16
申请人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Yi-Chang Lee
发明人: David Wei WANG , An-Hong Liu , Hsiang-Ming Huang , Yi-Chang Lee
IPC分类号: H01L23/498
CPC分类号: H01L23/481 , H01L21/563 , H01L21/76898 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/05009 , H01L2224/0557 , H01L2224/05655 , H01L2224/05666 , H01L2224/06181 , H01L2224/11462 , H01L2224/11464 , H01L2224/13022 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/1319 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/73204 , H01L2224/81193 , H01L2224/9202 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06544 , H01L2924/0002 , H01L2924/01019 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and a through-silicon-via (TSV) electrode structure formed in each through-silicon hole. Each through-silicon-via electrode structure comprises a dielectric layer formed on the inner wall of the through-silicon hole, a barrier layer formed on the inner wall of the dielectric layer and defining a vacancy therein, a filling metal layer filled into the vacancy, a first end of the filling metal layer being lower than the first surface forming a recess, and a soft metal cap connecting to and overlaying the first end of the filling metal layer, wherein a portion of the soft metal cap is formed in the recess and the soft metal cap protrudes out of the first surface. Hence, the reliability of multi-chip stack package structure can be enhanced with the application of these soft metal caps.
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公开(公告)号:US20100007001A1
公开(公告)日:2010-01-14
申请号:US12501100
申请日:2009-07-10
申请人: David Wei Wang , An-Hong Liu , Hao-Yin Tsai , Hsiang-Ming Huang , Yi-Chang Lee , Shu-Ching Ho
发明人: David Wei Wang , An-Hong Liu , Hao-Yin Tsai , Hsiang-Ming Huang , Yi-Chang Lee , Shu-Ching Ho
IPC分类号: H01L23/52 , H01L23/538 , H01L21/98 , H01L21/768
CPC分类号: H01L23/481 , H01L24/48 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/16145 , H01L2224/32145 , H01L2224/48091 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06596 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/01087 , H01L2924/07802 , H01L2924/09701 , H01L2924/14 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: Semiconductor package structures and methods for manufacturing the same are provided. The semiconductor package structure comprises a substrate unit and a first chip stack structure. The substrate unit comprises a circuit structure having test pads. The first chip stack structure comprises chips, and each of the chips has a plurality of through silicon plugs. The through silicon plugs of two adjacent chips are electrically connected and further electrically connected to the test pads of the substrate unit for electrical testing. Another semiconductor package structure provided by the present invention comprises a first semiconductor chip and a second semiconductor chip. Each of the semiconductor chips has test pads for electrical testing and a plurality of through silicon plugs connecting to the test pads. The second semiconductor chip is mounted on the first semiconductor chip, and a portion of the through silicon plugs of two semiconductor chips are electrically connected with each other.
摘要翻译: 提供半导体封装结构及其制造方法。 半导体封装结构包括衬底单元和第一芯片堆叠结构。 衬底单元包括具有测试焊盘的电路结构。 第一芯片堆叠结构包括芯片,并且每个芯片具有多个通硅插头。 两个相邻芯片的贯穿硅插头电连接并且进一步电连接到用于电测试的衬底单元的测试焊盘。 由本发明提供的另一半导体封装结构包括第一半导体芯片和第二半导体芯片。 每个半导体芯片具有用于电测试的测试焊盘和连接到测试焊盘的多个穿硅插头。 第二半导体芯片安装在第一半导体芯片上,并且两个半导体芯片的贯穿硅插头的一部分彼此电连接。
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