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    Electrodeposited copper foil
    3.
    发明授权
    Electrodeposited copper foil 失效
    电沉积铜箔

    公开(公告)号：US5454926A

    公开(公告)日：1995-10-03

    申请号：US363704

    申请日：1994-12-23

    申请人： Sidney J. Clouser ,  Dino F. DiFranco ,  Craig J. Hasegawa

    发明人： Sidney J. Clouser ,  Dino F. DiFranco ,  Craig J. Hasegawa

    IPC分类号： H05K1/09 ,  C25D1/04 ,  C25D3/38 ,  C25D7/06 ,  H05K3/38

    CPC分类号： C25D3/38 ,  C25D1/04 ,  H05K1/09 ,  H05K2201/0355 ,  H05K3/382 ,  Y10S428/935 ,  Y10T428/12431 ,  Y10T428/12993

    摘要： This invention relates to electrodeposited copper foil having an elongation measured at 180.degree. C. in excess of about 5.5%, an ultimate tensile strength measured at 23.degree. C. in excess of about 60,000 psi, and a matte-side R.sub.tm in the range of about 4.5 to about 18 .mu.m. This invention also relates to a process for making electrodeposited copper foil which comprises: preparing a copper deposition bath comprising water, copper ions and sulfate ions, said bath containing less than about 20 ppm chloride ions; and applying electric current to said bath to electrodeposit copper from said bath using a current density in the range of about 200 to about 3000 amps per square foot.

    摘要翻译： 本发明涉及电沉积铜箔，其在180℃下测得的伸长率超过约5.5％，在23℃下测得的超过约60,000psi的极限抗拉强度， 约4.5至约18亩。 本发明还涉及一种制备电沉积铜箔的方法，其包括：制备包含水，铜离子和硫酸根离子的铜沉积浴，所述浴含有少于约20ppm的氯离子; 以及向所述浴施加电流以使用约200至约3000安培/平方英尺范围内的电流密度从所述浴电沉积铜。

    Process for making copper foil
    6.
    发明授权
    Process for making copper foil 失效
    制作铜箔的工艺

    公开(公告)号：US5366612A

    公开(公告)日：1994-11-22

    申请号：US49176

    申请日：1993-04-19

    申请人： Sidney J. Clouser ,  Michael A. Eamon ,  Thomas L. Jordan ,  Stephen I. Kohut

    发明人： Sidney J. Clouser ,  Michael A. Eamon ,  Thomas L. Jordan ,  Stephen I. Kohut

    IPC分类号： B01D11/02 ,  C08J5/20 ,  C22B3/04 ,  C22B3/14 ,  C22B3/24 ,  C22B3/26 ,  C22B15/00 ,  C25C1/12 ,  C25D1/04 ,  C25D5/04 ,  C25D21/14 ,  C25D1/20

    CPC分类号： C22B3/0005 ,  C22B15/00 ,  C22B15/0065 ,  C22B3/04 ,  C25D1/04 ,  Y02P10/234 ,  Y02P10/236

    摘要： The present invention relates to a process for making copper foil from copper-bearing material comprising:(A) contacting said copper-bearing material with an effective amount of at least one aqueous leaching solution to dissolve copper ions into said leaching solution and form a copper-rich aqueous leaching solution;(B) contacting said copper-rich aqueous leaching solution with an effective amount of at least one water-insoluble extractant to transfer copper ions from said copper-rich aqueous leaching solution to said extractant to form a copper-rich extractant and a copper-depleted aqueous leaching solution;(C) separating said copper-rich extractant from said copper-depleted aqueous leaching solution;(D) contacting said copper-rich extractant with an effective amount of at least one aqueous stripping solution to transfer copper ions from said extractant to said stripping solution to form a copper-rich stripping solution and a copper-depleted extractant;(E) separating said copper-rich stripping solution from said copper-depleted extractant;(F) flowing said copper-rich stripping solution between an anode and a rotating cathode, and applying an effective amount of voltage across said anode and said cathode to deposit copper on said cathode; and(G) continuously removing copper foil from said cathode.

    摘要翻译： 本发明涉及由含铜材料制造铜箔的方法，包括：（A）使所述含铜材料与有效量的至少一种含水浸出溶液接触以将铜离子溶解到所述浸出溶液中并形成铜 含水浸出液; （B）使所述富铜水溶液与有效量的至少一种不溶于水的萃取剂接触，将铜离子从所述富铜水溶液浸出溶液转移到所述萃取剂中以形成富含铜的萃取剂和贫铜 含水浸出液; （C）从所述贫铜水溶液中分离出所述富铜萃取剂; （D）使所述富含铜的提取剂与有效量的至少一种水性剥离溶液接触，以将铜离子从所述萃取剂转移到所述汽提溶液中以形成富铜的汽提溶液和贫铜萃取剂; （E）将所述富铜剥离溶液与所述贫铜萃取剂分离; （F）使所述富铜剥离溶液在阳极和旋转阴极之间流动，并且在所述阳极和所述阴极上施加有效量的电压以在所述阴极上沉积铜; 和（G）从所述阴极连续地除去铜箔。

    Copper wire and process for making copper wire
    9.
    发明授权
    Copper wire and process for making copper wire 失效
    铜线和铜线制造工艺

    公开(公告)号：US6123788A

    公开(公告)日：2000-09-26

    申请号：US647707

    申请日：1996-05-24

    申请人： Sidney J. Clouser ,  Rudolf Wiechmann ,  Bernd Schneider ,  Ulrike Bohmler ,  R. Duane Apperson ,  Robert J. Fedor ,  Sharon K. Young ,  Roger N. Wright ,  Stephen J. Kohut ,  Susan S. Enos

    发明人： Sidney J. Clouser ,  Rudolf Wiechmann ,  Bernd Schneider ,  Ulrike Bohmler ,  R. Duane Apperson ,  Robert J. Fedor ,  Sharon K. Young ,  Roger N. Wright ,  Stephen J. Kohut ,  Susan S. Enos

    IPC分类号： C22F1/08 ,  C25D1/04 ,  C25D3/38 ,  C25D5/10 ,  H05K1/00

    CPC分类号： C25D1/04 ,  C25D5/10 ,  H05K1/0393 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0723 ,  H05K2203/1105

    摘要： This invention relates to copper wire having a substantially uniform unoriented grain structure that is essentially columnar grain free. This invention also relates to a process for making copper wire comprising: cutting copper foil to form at least one strand of copper wire, said copper foil being an annealable electrodeposited copper foil having a substantially uniform unoriented grain structure that is essentially columnar grain free, said foil being characterized by a fatigue ductility of at least about 25% after being annealed at 177.degree. C. for 15 minutes; and shaping said strand of wire to provide said strand with desired cross-sectional shape and size. This invention also relates to a process for making copper wire comprising: flowing an aqueous electrolyte solution between an anode and a cathode and applying an effective amount of voltage across the anode and the cathode to deposit copper foil on the cathode, said electrolyte solution being characterized by a chloride ion concentration of up to about 5 ppm and an organic additive concentration of up to about 0.2 ppm; cutting said foil to form at least one strand of wire; and shaping said strand of wire to provide said strand with desired cross-sectional shape and size.

    摘要翻译： 本发明涉及具有基本上无定向晶粒结构的基本上均匀的无晶粒状的铜线。 本发明还涉及一种制造铜线的方法，包括：切割铜箔以形成铜线的至少一根线，所述铜箔是具有基本上无定向晶粒结构的可退火的电沉积铜箔，其基本上无柱状，所述 箔的特征在于在177℃退火15分钟后的疲劳延展性至少约25％; 并且对所述线材进行成形以使所述股线具有期望的横截面形状和尺寸。 本发明还涉及一种制造铜线的方法，包括：使阳极和阴极之间的电解质水溶液流动，并在阳极和阴极上施加有效量的电压以将铜箔沉积在阴极上，所述电解质溶液的特征在于 通过高达约5ppm的氯离子浓度和高达约0.2ppm的有机添加剂浓度; 切割所述箔以形成至少一根丝线; 并且对所述线材进行成形以使所述股线具有期望的横截面形状和尺寸。

    Method for printed circuit board pattern making using selectively etchable metal layers
    10.
    发明授权
    Method for printed circuit board pattern making using selectively etchable metal layers 失效
    使用选择性可蚀刻金属层的印刷电路板图案制造方法

    公开(公告)号：US5017271A

    公开(公告)日：1991-05-21

    申请号：US572849

    申请日：1990-08-24

    申请人： Christopher J. Whewell ,  Sidney J. Clouser ,  Chin-ho Lee

    发明人： Christopher J. Whewell ,  Sidney J. Clouser ,  Chin-ho Lee

    IPC分类号： C25D7/00 ,  C23F1/02 ,  H05K3/00 ,  H05K3/02 ,  H05K3/06 ,  H05K3/10 ,  H05K3/24

    CPC分类号： C23F1/02 ,  H05K3/025 ,  H05K3/108 ,  H05K2203/0152 ,  H05K2203/0376 ,  H05K2203/0726 ,  H05K2203/0793

    摘要： The present invention provides a method for producing high density electronic circuit boards comprising the steps of depositing a layer of a first metal upon a layer of foil to produce a composite then attaching the composite to an insulative support to produce a laminate. The layer of foil is then removed from the layer of first metal. Photoresist is then applied to the layer of first metal, exposed and developed. During the development of the photoresist portions of the photoresist are removed from the layer of first metal. A layer of third metal is then plated upon the portions of the layer of first metal that are not covered by the photoresist. All remaining photoresist and the portions of the layer of first metal which are not covered by the third metal are then removed producing a finished fine-line pattern having conductive and insulative areas. The finished fine-line pattern may then be utilized to produce a circuit board.

    摘要翻译： 本发明提供了一种生产高密度电子电路板的方法，包括以下步骤：将第一金属层沉积在箔层上，以产生复合材料，然后将复合材料连接到绝缘支撑件上以产生层压板。 然后从第一金属层去除箔层。 然后将光致抗蚀剂施加到第一金属层，暴露并显影。 在光致抗蚀剂的显影期间，从第一金属层去除光致抗蚀剂的部分。 然后将第三金属层镀在未被光致抗蚀剂覆盖的第一金属层的部分上。 然后除去未被第三金属覆盖的所有剩余的光致抗蚀剂和第一金属层的部分，产生具有导电和绝缘区域的精细细线图案。 然后可以利用完成的细线图案来生产电路板。