公开(公告)号：US4988405A

公开(公告)日：1991-01-29

申请号：US454088

申请日：1989-12-21

申请人： Edward P. Martin, Jr. ,  Ronald J. Schutz ,  Gerald Smolinsky

发明人： Edward P. Martin, Jr. ,  Ronald J. Schutz ,  Gerald Smolinsky

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311

CPC分类号： H01L21/31055 ,  H01L21/31111

摘要： Smoothing irregularities in a surface is accomplished by a wet-etchback technique. In this technique, a polysilicate composition is formed on a nonplanar substrate such as the surface of an integrated-circuit wafer. The polysilicate is etched away and the etching is continued into the underlying surface. As a result, a substantial smoothing of the surface is obtained.

公开(公告)号：US5243221A

公开(公告)日：1993-09-07

申请号：US1203

申请日：1993-01-05

申请人： Vivian W. Ryan ,  Ronald J. Schutz

发明人： Vivian W. Ryan ,  Ronald J. Schutz

IPC分类号： H01L23/532

CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

摘要： Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movement avoided but electromigration problems are also decreased.

摘要翻译： 通过用铁掺杂铝，基本上避免了用作集成电路中的连接的铝线中的应力引起的晶界运动。 通过这种方式，不仅可以避免晶界运动，而且电迁移问题也会减少。

公开(公告)号：US4871420A

公开(公告)日：1989-10-03

申请号：US150490

申请日：1988-02-10

申请人： Frank B. Alexander, Jr. ,  Pang-Dow Foo ,  Ronald J. Schutz

发明人： Frank B. Alexander, Jr. ,  Pang-Dow Foo ,  Ronald J. Schutz

IPC分类号： H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  H01L21/3065

摘要： By adjusting the AC field conditions, i.e., by grounding the environment of a substrate being etched with a chlorine-containing plasma, a significant increase in etch selectivity is achieved. By applying a similar AC field adjustment to the reaction chamber surfaces, excellent etch uniformity is achieved in conjunction with excellent selectivity.

摘要翻译： 通过调整AC场条件，即通过用含氯等离子体接地被蚀刻的衬底的环境来实现蚀刻选择性的显着增加。 通过对反应室表面施加类似的AC场调整，结合优异的选择性实现了优异的蚀刻均匀性。

公开(公告)号：US06358850B1

公开(公告)日：2002-03-19

申请号：US09471428

申请日：1999-12-23

申请人： Laertis Economikos ,  Sumit Pandey ,  Ronald J. Schutz ,  Ravikumar Ramachandran

发明人： Laertis Economikos ,  Sumit Pandey ,  Ronald J. Schutz ,  Ravikumar Ramachandran

IPC分类号： H01L21302

CPC分类号： B24B37/0056 ,  B24B37/04 ,  B24B37/042 ,  H01L21/31053

摘要： The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a cationic surfactant for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level.

摘要翻译： 本发明提供无浆化学机械抛光方法，其有效平坦化氧化物材料，特别是硅氧化物，即使起始氧化物层具有显着的形貌变化。 本发明的方法的特征在于使用固定的研磨抛光元件，并且通过使用含有阳离子表面活性剂的含水液体介质，用于抛光过程的至少一部分，包括减少跨越的地形变化量（高差） 衬底上的氧化物材料。 该方法减少或消除了地形变化的转移到低于期望的平坦化水平的水平。

公开(公告)号：US06303506B1

公开(公告)日：2001-10-16

申请号：US09409464

申请日：1999-09-30

申请人： Haruki Nojo ,  Ronald J. Schutz ,  Ravikumar Ramachandran

发明人： Haruki Nojo ,  Ronald J. Schutz ,  Ravikumar Ramachandran

IPC分类号： H01L2100

CPC分类号： H01L21/31053

摘要： An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

摘要翻译： 一种用于二氧化硅工件的化学机械抛光的无水无浆料组合物，其包含：阳离子表面活性剂，其在中性至碱性pH条件下是可溶的和电离的，其中所述阳离子表面活性剂存在于无水无淤浆组合物中 量小于其临界胶束浓度。

公开(公告)号：US6037648A

公开(公告)日：2000-03-14

申请号：US105647

申请日：1998-06-26

申请人： Kenneth C. Arndt ,  Jeffrey P. Gambino ,  Jack A. Mandelman ,  Chandrasekhar Narayan ,  Rainer F. Schnabel ,  Ronald J. Schutz ,  Dirk Tobben

发明人： Kenneth C. Arndt ,  Jeffrey P. Gambino ,  Jack A. Mandelman ,  Chandrasekhar Narayan ,  Rainer F. Schnabel ,  Ronald J. Schutz ,  Dirk Tobben

IPC分类号： H01L21/82 ,  H01L21/768 ,  H01L23/525 ,  H01L29/00

CPC分类号： H01L21/76885 ,  H01L23/5256 ,  H01L2924/0002

摘要： A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication.

摘要翻译： 包括半导体衬底的半导体结构，衬底上的导电电平和位于导电水平处的金属熔断器，其中熔丝包括其上的自对准电介质蚀刻停止层以及其制造工艺。

公开(公告)号：US06420267B1

公开(公告)日：2002-07-16

申请号：US09551757

申请日：2000-04-18

申请人： Chenting Lin ,  Ronald J. Schutz ,  Andreas Knorr ,  Keith Wong ,  Hua Shen ,  Jenny Lian

发明人： Chenting Lin ,  Ronald J. Schutz ,  Andreas Knorr ,  Keith Wong ,  Hua Shen ,  Jenny Lian

IPC分类号： H01L2100

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55

摘要： A method of forming an integrated barrier/contact for stacked capacitors is provided which results in reduced cost of ownership and in a barrier which is nominally several times thicker than convention structures. The resulting structure results in decreased contact plug resistance as compared with conventional devices.

摘要翻译： 提供了一种形成用于层叠电容器的集成屏障/触点的方法，其导致所有权成本降低以及名义上比常规结构厚几倍的屏障。 与常规装置相比，所得结构导致接触插头电阻降低。

公开(公告)号：US5057441A

公开(公告)日：1991-10-15

申请号：US605043

申请日：1990-10-29

申请人： Gregory M. Gutt ,  Avid Kamgar ,  Robert V. Knoell ,  Ronald J. Schutz

发明人： Gregory M. Gutt ,  Avid Kamgar ,  Robert V. Knoell ,  Ronald J. Schutz

IPC分类号： G01R31/27 ,  G01R31/28 ,  H01L21/66

CPC分类号： G01R31/2858 ,  G01R31/275 ,  H01L22/20 ,  G01R31/2856 ,  H01L2924/0002

摘要： Disclosed is a method for manufacturing an integrated circuit which includes the step of evaluating the reliability of metal films in the circuit using a noise measurement technique. In one embodiment, a film portion to be tested is incorporated in a Wheatstone bridge. A relatively large direct current is passed through the film to stimulate 1/f.sup.2 noise. A relatively small alternating current is concurrently passed through the film. The bridge imbalance signal at the ac frequency is amplified and demodulated by a phase-locked amplifier, and is then frequency analyzed. The film is evaluated by comparing the resulting noise power spectrum with predetermined standards.

摘要翻译： 公开了一种用于制造集成电路的方法，其包括使用噪声测量技术评估电路中的金属膜的可靠性的步骤。 在一个实施例中，待测试的膜部分被并入惠斯通电桥。 相对较大的直流电流通过该膜以刺激1 / f2噪声。 相对小的交流电流同时通过薄膜。 交流频率下的桥不平衡信号被锁相放大器放大和解调，然后进行频率分析。 通过将得到的噪声功率谱与预定标准进行比较来评估该膜。

公开(公告)号：US5008217A

公开(公告)日：1991-04-16

申请号：US534772

申请日：1990-06-08

申请人： Christopher J. Case ,  Kin P. Cheung ,  Ruichen Liu ,  Ronald J. Schutz ,  Richard S. Wagner

发明人： Christopher J. Case ,  Kin P. Cheung ,  Ruichen Liu ,  Ronald J. Schutz ,  Richard S. Wagner

IPC分类号： H01L21/28 ,  H01L21/285

CPC分类号： H01L21/28556

摘要： Direct contact to shallow junctions in integrated circuits and interconnection between these contacts is achievable by utilizing a specific aluminum CVD process. In this process the aluminum is deposited utilizing a triisobutyl aluminum precursor onto a substrate having a nucleation layer, e.g. a titanium nitride layer. By appropriate choice of this nucleation layer to control the nucleation of the depositing aluminum, suitable contact is made while avoiding void defects present in the absence of such layer.

公开(公告)号：US4680084A

公开(公告)日：1987-07-14

申请号：US642931

申请日：1984-08-21

申请人： Peter A. Heimann ,  Joseph M. Moran ,  Ronald J. Schutz

发明人： Peter A. Heimann ,  Joseph M. Moran ,  Ronald J. Schutz

IPC分类号： G01D11/06 ,  C23F1/00 ,  C23F1/08 ,  C23F4/00 ,  G01B11/06 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： G01B11/0683

摘要： The invention involves new etch monitoring and thickness measurement techniques which are more accurate than previous techniques. In accordance with the invention, the etch depth of a substrate region undergoing etching is monitored, or the thickness of the region is measured, by impinging the region with light and detecting the intensity of the reflected light. In contrast to the previous techniques, the incident light is chosen so that a substrate region underlying, and/or a patterned substrate region overlying the substrate region of interest is substantially opaque to the incident light, which precludes the formation of signals unrelated to etch depth or thickness.

摘要翻译： 本发明涉及新的蚀刻监测和厚度测量技术，其比先前技术更准确。 根据本发明，通过用光照射该区域并检测反射光的强度来监测进行蚀刻的衬底区域的蚀刻深度，或者测量该区域的厚度。 与之前的技术相反，入射光被选择为使得覆盖在感兴趣的衬底区域上的衬底区域和/或图案化衬底区域对于入射光基本上是不透明的，这排除了与蚀刻深度无关的信号的形成 或厚度。