公开(公告)号：US4708884A

公开(公告)日：1987-11-24

申请号：US875475

申请日：1986-06-18

申请人： Edwin A. Chandross ,  Robert E. Dean ,  Patrick K. Gallagher ,  Roland A. Levy ,  Frank Schrey ,  Gerald Smolinsky

发明人： Edwin A. Chandross ,  Robert E. Dean ,  Patrick K. Gallagher ,  Roland A. Levy ,  Frank Schrey ,  Gerald Smolinsky

IPC分类号： C23C16/40 ,  H01L21/316 ,  B05D3/14

CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02129 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612

摘要： Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

摘要翻译： 诸如二氧化硅的氧化硅的保形层在低于600℃的温度下通过诸如二乙酰氧基二乙氧基丙氧基硅烷的化合物的分解沉积。 所需温度不会对温度敏感结构产生显着影响。 因此，可以在具有这些结构的器件的处理中形成氧化硅区域。 更一般地，降温处理可以应用于包括氧化硅的其它材料的沉积。 例如，硼磷硅酸盐玻璃可以通过化学气相沉积处理进行沉积，包括闪蒸蒸发液体前体试剂的混合物。

公开(公告)号：US4968644A

公开(公告)日：1990-11-06

申请号：US193179

申请日：1988-05-05

申请人： Patrick K. Gallagher ,  Martin L. Green ,  Roland A. Levy

发明人： Patrick K. Gallagher ,  Martin L. Green ,  Roland A. Levy

IPC分类号： H01L21/285

CPC分类号： H01L21/28556

摘要： A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.

摘要翻译： 公开了一种用于制造例如半导体器件的器件的方法，其包括使至少两个反应性实体反应以在被处理或未加工的衬底的区域上形成含金属材料的步骤。 在该方法中固有的是认识到，一个反应性实体将经常与基底材料反应以产生先前未被认识和非常不期望的结果，例如先前制造的器件部件的几乎完全的侵蚀。 因此，根据本发明的方法，采用各种技术中的任一种来降低基材和与该材料反应的物质之间的反应速率，同时避免两个实体之间的反应速率的显着降低。

公开(公告)号：US4902086A

公开(公告)日：1990-02-20

申请号：US163687

申请日：1988-03-03

申请人： Charles H. Henry ,  Roland A. Levy

发明人： Charles H. Henry ,  Roland A. Levy

IPC分类号： G02B6/122 ,  G02B6/10 ,  G02B6/12 ,  G02B6/125 ,  G02B6/132

CPC分类号： G02B6/132 ,  G02B6/125

摘要： In the manufacture of optical devices such as, e.g., optical communications assemblies and optical gyroscopes, low-loss substrate-supported optical waveguides are desired. Such waveguides can be obtained by patterning a layer of deposited waveguide material and, in the interest of minimizing loss as may be due to processing-induced surface roughness, waveguides as patterned preferably undergo a heat treatment which results in surface smoothing and in rounding of the waveguide cross section. Furthermore, in the interest of avoiding re-entrant corners between substrate and waveguide, a wetting layer may be applied to the waveguide prior to heat treatment.

公开(公告)号：US4868093A

公开(公告)日：1989-09-19

申请号：US45907

申请日：1987-05-01

申请人： Roland A. Levy

发明人： Roland A. Levy

IPC分类号： C30B29/38 ,  G03F1/22 ,  H01L21/027

CPC分类号： G03F1/22 ,  Y10S430/167 ,  Y10S430/168

摘要： A hydrogen-free boron-containing membrane in tension exhibits advantageous properties for use as a mask in X-ray lithography.

公开(公告)号：US4733291A

公开(公告)日：1988-03-22

申请号：US798422

申请日：1985-11-15

申请人： Roland A. Levy ,  Kurt Nassau

发明人： Roland A. Levy ,  Kurt Nassau

IPC分类号： H01L21/768 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L29/44 ,  H01L29/60

CPC分类号： H01L23/485 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S148/133

摘要： A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the overhang problem can be consistently avoided if the ratio of glass thickness to via-to-via spacing is about .ltoreq.0.393.

摘要翻译： 绕过接触孔的锋利边缘的玻璃回流步骤通常包括在用于制造集成电路器件的工艺中。 在制造具有紧密间隔的通孔的这种装置的过程中，已经发现在通孔的侧壁上发生不可接受的突出。 玻璃组成的变化和回流处理参数的变化都不能有效地避免悬垂现象。 根据本发明，已经发现，如果玻璃厚度与通孔间距的比值约为0.393，则可以始终避免突出问题。

公开(公告)号：US4837609A

公开(公告)日：1989-06-06

申请号：US94573

申请日：1987-09-09

申请人： Michael Gurvitch ,  Roland A. Levy

发明人： Michael Gurvitch ,  Roland A. Levy

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/498 ,  H01L23/52 ,  H01L23/532 ,  H01L23/538 ,  H01L39/06

CPC分类号： H01L23/49888 ,  H01L21/76891 ,  H01L23/53285 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10S505/919 ,  Y10S505/922 ,  Y10S505/923

摘要： A semiconductor device which includes either a single semiconductor chip bearing an integrated circuit (IC) or two or more electrically interconnected semiconductor chips, is disclosed. This device includes interconnects between device components (on the same chip and/or on different chips), at least one of which includes a region of superconducting material, e.g., a region of copper oxide superconductor having a T.sub.c greater than about 77K. Significantly, to avoid undesirable interactions, at high processing temperatures, between the superconducting material and underlying, silicon-containing material (which, among other things, results in the superconducting material reverting to its non-superconducting state), the interconnect also includes a combination of material regions which prevents such interactions.

公开(公告)号：US4754384A

公开(公告)日：1988-06-28

申请号：US74850

申请日：1987-07-17

申请人： Roland A. Levy ,  Thomas P. Pearsall

发明人： Roland A. Levy ,  Thomas P. Pearsall

IPC分类号： H02M11/00 ,  H02M7/00 ,  H03B15/00

CPC分类号： H02M11/00

摘要： Disclosed is a novel switching device. In its currently preferred embodiment the device comprises a conductive path that comprises a superconductive section, with the remainder of the path being non-superconductive, means for applying a voltage across the path such that a current flows, and means for changing the current in the path from a first value to a second value, where one of the two values is below, and the other is above, a critical current associated with the superconductive section of the path. Depending on the choice of applied voltage and path parameters changing the current from the first to the second state results in switching of the current, either oscillating between two levels of current, or to a steady value. Exemplarily, the current is changed by changing the applied voltage or by changing the resistance of the non-superconductive portion of the conductive path. The device can be used as, for instance, a microwave oscillator or a (binary) photodetector.

摘要翻译： 公开了一种新颖的开关装置。 在其当前优选的实施例中，该器件包括导电路径，该导电路径包括超导部分，其中路径的其余部分是非超导的，用于跨过路径施加电压使得电流流动的装置，以及用于改变电流的装置 从第一值到第二值的路径，其中两个值中的一个在下面，另一个在上面，是与路径的超导部分相关联的临界电流。 根据施加的电压和路径参数的选择，将电流从第一状态改变到第二状态导致电流的切换，这两个电流在两个电平电平之间振荡，或者是稳定的值。 示例性地，通过改变施加的电压或通过改变导电路径的非超导部分的电阻来改变电流。 该装置可以用作例如微波振荡器或（二进制）光电检测器。

公开(公告)号：US4716050A

公开(公告)日：1987-12-29

申请号：US928744

申请日：1986-11-10

申请人： Martin L. Green ,  Roland A. Levy ,  Ralph G. Nuzzo

发明人： Martin L. Green ,  Roland A. Levy ,  Ralph G. Nuzzo

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/20 ,  H01L21/285 ,  H01L21/3205 ,  B05D5/12

CPC分类号： C23C16/04 ,  C23C16/20 ,  H01L21/28556 ,  H01L21/32051

摘要： Chemical vapor deposition of an aluminum layer on a substrate is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

摘要翻译： 在沉积之前通过表面活化来促进铝层在基底上的化学气相沉积。 表面活化处于相对较低的温度，导致水合表面; 低温表面活化有利于保持沉积设备不含附加的化学物质，并且以这种方式活化的底物可以在铝沉积之前储存相当长的时间。 合适的活化剂中有有机铬，有机硅烷和有机铝化合物。

公开(公告)号：US5789024A

公开(公告)日：1998-08-04

申请号：US648316

申请日：1996-05-15

申请人： Roland A. Levy ,  Emmanuel S. Ramos

发明人： Roland A. Levy ,  Emmanuel S. Ramos

IPC分类号： B01D53/22 ,  B01D71/02 ,  C23C16/04 ,  C23C16/40 ,  B05D5/00 ,  C23C16/00

CPC分类号： B01D67/0072 ,  B01D53/228 ,  B01D71/02 ,  B01D71/027 ,  C23C16/045 ,  C23C16/401 ,  B01D2323/08 ,  B01D2323/10

摘要： A composite membrane is disclosed which operates as a filter for liquids, solids and gases and combinations thereof, having high permeability for the filtrate, e.g., nitrogen passing therethrough, and high selectivity for matter retained thereby, e.g., volatile organic compounds, so that the N.sub.2 /VOC selectivity is at least about 50/1 or greater; prepared by a low pressure chemical vapor deposition process comprising: (a) providing as a first component thereof, a mesoporous membrane substrate having pore diameters greater than about 20 .ANG.; (b) contacting surfaces, including pore surfaces, of the membrane with at least two reactant gas streams in an opposing reactant geometry, wherein the smallest reactant gas molecule has a kinetic diameter intermediate in size between that of the matter retained by said filter and the filtrate passing therethrough; the reactant gases are capable upon reaction of depositing thereon as a second component thereof, a reaction product which by coating the surfaces, including pore surfaces of said mesoporous substrate, substantially reduces the pore diameters thereof, resulting in a substantially uniform microporous film having pore diameters in the range of from about 4 .ANG. to about 8 .ANG.; the reaction product comprises predominantly silicon oxide, --Si--O--, and may optionally include for the purpose of optimizing the stress, and other mechanical, chemical and thermal properties of said film, minor amounts of one or more members, in any combination thereof, selected from the group consisting of polysilicon, --Si--Si--, silicon carbide, --Si--C--, and silicon nitride, --Si--N--; and wherein said reactant gas streams comprise: (1) as the source of silicon and optionally carbide, a di-alkylsilane of the formula R.sup.1 (R.sup.2)SiH.sub.2.

摘要翻译： 公开了一种复合膜，其用作液体，固体和气体及其组合的过滤器，其对于滤液具有高渗透性，例如通过其中的氮，以及由此保留的物质（例如挥发性有机化合物）的高选择性，使得 N 2 / VOC选择性为至少约50/1或更大; 通过低压化学气相沉积方法制备，其包括：（a）提供孔径大于约20的介孔膜基材作为其第一组分; （b）使所述膜的表面（包括孔表面）与相对的反应物几何形状中的至少两个反应物气流接触，其中所述最小反应物气体分子具有在所述过滤器保留的物质与所述过滤器之间的尺寸中间的动力学直径， 滤液通过; 反应物气体作为其第二组分沉积在反应物上，反应产物通过涂覆表面，包括所述介孔基材的孔表面，基本上减小其孔径，导致基本上均匀的微孔膜，其孔径 在约4 ANGSTROM到约8 ANGSTROM的范围内; 反应产物主要包含氧化硅-Si-O-，并且可以任选地包括用于优化所述膜的应力和其它机械，化学和热性质，其中任何组合的少量一种或多种成员 ，选自多晶硅，-Si-Si-，碳化硅，-Si-C-和氮化硅，-Si-N-; 并且其中所述反应物气流包括：（1）作为硅源和任选的碳化物，式R1（R2）SiH2的二烷基硅烷。