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公开(公告)号：US09093383B1
公开(公告)日：2015-07-28
申请号：US14268420
申请日：2014-05-02
CPC分类号： H01L23/295 , C08K3/08 , C08K3/28 , C08K3/32 , C08K3/36 , C08K2003/321 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05567 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/32245 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01079 , H01L2924/01046 , H01L2924/013 , H01L2924/00013 , C08L63/00
摘要： A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
摘要翻译： 提供了用于封装半导体器件（101）的模制化合物。 模具化合物包含至少约70重量％的二氧化硅填料，至少约10重量％的环氧树脂体系，以及对铜球接合腐蚀有益的有益离子。 模具化合物中有益离子的总含量至少约为100ppm。
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公开(公告)号：US20150145148A1
公开(公告)日：2015-05-28
申请号：US14090086
申请日：2013-11-26
发明人： Tu-Anh N. Tran , John G. Arthur , Yin Kheng Au , Chu-Chung Lee , Chin Teck Siong , Meijiang Song , Jia Lin Yap , Matthew J. Zapico
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L22/12 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/06135 , H01L2224/13147 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48451 , H01L2224/48453 , H01L2224/48463 , H01L2224/48824 , H01L2224/49175 , H01L2224/85048 , H01L2224/85181 , H01L2224/85205 , H01L2224/85206 , H01L2224/85207 , H01L2224/85345 , H01L2224/859 , H01L2924/181 , H01L2924/00 , H01L2924/20752 , H01L2924/00014 , H01L2924/00012
摘要： An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.
摘要翻译： 提供一种集成电路铜线接合连接，其具有直接结合在形成在低k电介质层（30）上的铝接合焊盘（31）上的铜球（32），以形成用于铜球的接合界面结构，其特征在于： 第一多个几何特征以提供热循环可靠性，包括位于铜球下面的外周位置（42）处的铝最小特征（Z1，Z2），以防止铝接合焊盘中的裂纹的形成和/或传播。
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公开(公告)号：US09461012B2
公开(公告)日：2016-10-04
申请号：US14557769
申请日：2014-12-02
发明人： Leo M. Higgins, III , Chu-Chung Lee
IPC分类号： H01L23/49 , H01L21/607 , H01L21/603 , H01L23/485 , H01L23/00
CPC分类号： H01L24/48 , H01L24/05 , H01L24/45 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4845 , H01L2224/48451 , H01L2224/48463 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/49175 , H01L2224/85206 , H01L2224/85207 , H01L2224/859 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.
摘要翻译： 提供集成电路引线接合连接，其具有直接结合到铜球（52）的铝接合焊盘（51），以在所述铝球的外围接合边缘处形成铝飞溅结构（53）和相关的缝隙开口（55） 铜球（54），其中铝飞溅结构（53）的特征在于表示可靠的铜球接合的多个几何特性，例如侧面飞溅尺寸，飞溅形状，飞溅球缝隙相对于铝垫的相对位置 ，缝隙宽度，缝隙长度，缝隙角度和/或缝隙喷溅指数。
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公开(公告)号：US09257403B2
公开(公告)日：2016-02-09
申请号：US14090086
申请日：2013-11-26
发明人： Tu-Anh N. Tran , John G. Arthur , Yin Kheng Au , Chu-Chung Lee , Chin Teck Siong , Meijiang Song , Jia Lin Yap , Matthew J. Zapico
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L22/12 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/06135 , H01L2224/13147 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48451 , H01L2224/48453 , H01L2224/48463 , H01L2224/48824 , H01L2224/49175 , H01L2224/85048 , H01L2224/85181 , H01L2224/85205 , H01L2224/85206 , H01L2224/85207 , H01L2224/85345 , H01L2224/859 , H01L2924/181 , H01L2924/00 , H01L2924/20752 , H01L2924/00014 , H01L2924/00012
摘要： An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.
摘要翻译： 提供一种集成电路铜线接合连接，其具有直接结合在形成在低k电介质层（30）上的铝接合焊盘（31）上的铜球（32），以形成用于铜球的接合界面结构，其特征在于： 第一多个几何特征以提供热循环可靠性，包括位于铜球下面的外周位置（42）处的铝最小特征（Z1，Z2），以防止铝接合焊盘中的裂纹的形成和/或传播。
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公开(公告)号：US09368470B2
公开(公告)日：2016-06-14
申请号：US14529744
申请日：2014-10-31
CPC分类号： H01L24/45 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/4555 , H01L2224/45565 , H01L2224/45572 , H01L2224/45573 , H01L2224/45574 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45664 , H01L2224/484 , H01L2224/4845 , H01L2224/48455 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/78268 , H01L2224/78301 , H01L2224/78304 , H01L2224/85002 , H01L2224/85045 , H01L2224/85181 , H01L2224/8593 , H01L2224/85943 , H01L2924/00011 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/01049
摘要： A semiconductor device includes a bond formed on a bond pad. The bond is formed of a wire that includes a central core of conductive metal, a first coating over the central core of conductive metal that is more chemically active than the conductive metal, and a second coating over the central core of conductive metal that is less chemically active than the central core of conductive metal.
摘要翻译： 半导体器件包括形成在接合焊盘上的键。 该键由包括导电金属的中心芯的导线形成，导电金属的中心芯上的第一涂层比导电金属更具化学活性，并且导电金属的中心芯上的第二涂层较少 比导电金属的中心芯化学活性。
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公开(公告)号：US08853867B2
公开(公告)日：2014-10-07
申请号：US14170067
申请日：2014-01-31
IPC分类号： H01L23/532 , H01L23/48 , H01L23/29 , H01L23/28
CPC分类号： H01L23/295 , C08L63/00 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05567 , H01L2224/05624 , H01L2224/32245 , H01L2224/45147 , H01L2224/45565 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85 , H01L2924/00011 , H01L2924/10253 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2924/01046 , H01L2924/01079 , H01L2924/01033
摘要： A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
摘要翻译： 提供了用于封装半导体器件（101）的模制化合物。 模具化合物包含至少约70重量％的二氧化硅填料，至少约10重量％的环氧树脂体系，以及对铜球接合腐蚀有益的有益离子。 模具化合物中有益离子的总含量至少约为100ppm。
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公开(公告)号：US08643197B1
公开(公告)日：2014-02-04
申请号：US13651995
申请日：2012-10-15
IPC分类号： H01L23/532
摘要： A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
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公开(公告)号：US09331046B2
公开(公告)日：2016-05-03
申请号：US14315766
申请日：2014-06-26
发明人： Chu-Chung Lee , Kian Leong Chin , Kevin J. Hess , James Patrick Johnston , Tu-Anh N. Tran , Heng Keong Yip
CPC分类号： H01L24/81 , H01L21/56 , H01L23/62 , H01L24/11 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/4911 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19043 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit package includes a semiconductor die attached to a package support. The die has a plurality of peripheral bond pads along a periphery of the die and a first bond pad on an interior portion of the die wherein the first bond pad is a power supply bond pad. A conductive distributor is over the die and within a perimeter of the die and has a first opening. The plurality of bond pads are located between the perimeter of the die and a perimeter of the conductive distributor. The first bond pad is in the first opening. A first bond wire is connected between the first bond pad and the conductive distributor. A second bond wire is connected between a first peripheral bond pad of the plurality of peripheral bond pads and the conductive distributor.
摘要翻译： 集成电路封装包括附接到封装支撑件的半导体管芯。 所述管芯具有沿着所述管芯的周边的多个外围接合焊盘和所述管芯的内部部分上的第一接合焊盘，其中所述第一接合焊盘是电源接合焊盘。 导电分布器在模具之上并且在模具的周边内并且具有第一开口。 多个接合焊盘位于管芯的周边和导电分布器的周边之间。 第一个焊盘在第一个开口。 第一接合线连接在第一接合焊盘和导电分布器之间。 第二接合线连接在多个外围接合焊盘的第一外围接合焊盘和导电分布器之间。
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