METHOD FOR MANUFACTURING METAL-FILLED MICROSTRUCTURE
    3.
    发明申请
    METHOD FOR MANUFACTURING METAL-FILLED MICROSTRUCTURE 审中-公开
    制造金属填充微结构的方法

    公开(公告)号:US20160153104A1

    公开(公告)日:2016-06-02

    申请号:US15019370

    申请日:2016-02-09

    Inventor: Kosuke YAMASHITA

    Abstract: An object of the present invention is to provide a method for manufacturing a metal-filled microstructure, capable of easily filling micropores with metal and suppressing the generation of residual stress caused by metal filling. A method for manufacturing a metal-filled microstructure according to the present invention includes: an anodic oxidation treatment step of anodically oxidizing a single surface of an aluminum substrate to form an anodic oxidation film on the single surface of the aluminum substrate, the anodic oxidation film including micropores, which are present in a thickness direction, and a barrier layer which is present in a bottom portion of the micropores; a barrier layer removal step of removing the barrier layer of the anodic oxidation film after the anodic oxidation treatment step; a metal filling step of filling the inside of the micropores with metal through an electroplating treatment after the barrier layer removal step; and a substrate removal step of removing the aluminum substrate to obtain a metal-filled microstructure after the metal filling step.

    Abstract translation: 本发明的目的是提供一种能够容易地用金属填充微孔并抑制由金属填充引起的残余应力的产生的金属填充微结构的制造方法。 根据本发明的制造金属填充微结构的方法包括:阳极氧化处理步骤,阳极氧化铝基板的单面以在铝基板的单个表面上形成阳极氧化膜,阳极氧化膜 包括存在于厚度方向的微孔和存在于微孔的底部的阻挡层; 在阳极氧化处理步骤之后去除阳极氧化膜的阻挡层的阻挡层去除步骤; 在阻挡层去除步骤之后通过电镀处理用金属填充微孔内部的金属填充步骤; 以及去除铝基板以在金属填充步骤之后获得金属填充的微结构的基板去除步骤。

    STRUCTURE, METHOD FOR MANUFACTURING STRUCTURE, LAMINATE, AND SEMICONDUCTOR PACKAGE

    公开(公告)号:US20200168551A1

    公开(公告)日:2020-05-28

    申请号:US16775497

    申请日:2020-01-29

    Inventor: Kosuke YAMASHITA

    Abstract: A structure includes: a plurality of through holes that are provided to an insulating base and penetrate the insulating base in the thickness direction; conductive paths that are constituted of a conductive substance filling the plurality of through-holes; and insulators with which the plurality of through-holes are filled and are constituted of an insulating substance different from that of the insulating base. Both ends of the respective conductive paths are provided with protrusions that protrude from each surface of the insulating base in the thickness direction. Both ends of the insulators are flush with each surface of the insulating base in the thickness direction, protrude with respect to the surface in the thickness direction, or are recessed from the surface in the thickness direction.

    MULTI-LAYERED BOARD AND SEMICONDUCTOR PACKAGE
    8.
    发明申请
    MULTI-LAYERED BOARD AND SEMICONDUCTOR PACKAGE 审中-公开
    多层板和半导体封装

    公开(公告)号:US20140085829A1

    公开(公告)日:2014-03-27

    申请号:US14030148

    申请日:2013-09-18

    Inventor: Kosuke YAMASHITA

    Abstract: The invention provides a multi-layered board and a semiconductor package including the multi-layered board with improved heat dissipation performance of the semiconductor package. A multi-layered board includes an anisotropically-conductive member that includes an insulating base which is an anodized film of an aluminum substrate and in which through-holes are formed in a thickness direction and a plurality of conduction passages which are formed of a conductive material filled in the through-holes and which extend through the insulating base in the thickness direction with the conduction passages insulated from each other, a heat conducting layer that includes heat conducting portions and is disposed on at least one surface of the anisotropically-conductive member, and heat dissipating portions formed of the conductive material and protruding from the insulating base.

    Abstract translation: 本发明提供一种多层板和半导体封装,其包括具有改善的半导体封装的散热性能的多层板。 多层板包括各向异性导电构件,其包括作为铝基板的阳极氧化膜的绝缘基底,并且其厚度方向上形成有通孔和由导电材料形成的多个导电通道 填充在所述通孔中,并且所述通孔彼此绝缘的在所述厚度方向上延伸穿过所述绝缘基底;导热层,其包括导热部分并设置在所述各向异性导电部件的至少一个表面上; 以及由导电材料形成并从绝缘基底突出的散热部。

Patent Agency Ranking