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    Techniques promoting adhesion of porous low K film to underlying barrier layer
    1.
    发明申请
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US20050233591A1

    公开(公告)日：2005-10-20

    申请号：US11046090

    申请日：2005-01-28

    申请人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

    发明人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

    IPC分类号： B44C1/22 ,  C23C16/40 ,  C23C16/56 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768

    CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2/2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

    Techniques promoting adhesion of porous low K film to underlying barrier layer
    4.
    发明授权
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US07547643B2

    公开(公告)日：2009-06-16

    申请号：US11046090

    申请日：2005-01-28

    申请人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    发明人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

    Process and apparatus for post deposition treatment of low k dielectric materials
    10.
    发明申请
    Process and apparatus for post deposition treatment of low k dielectric materials 审中-公开
    低k介电材料的后沉积处理工艺和设备

    公开(公告)号：US20050250346A1

    公开(公告)日：2005-11-10

    申请号：US11123265

    申请日：2005-05-05

    申请人： Francimar Schmitt

    发明人： Francimar Schmitt

    IPC分类号： H01L21/469 ,  H01L21/768

    CPC分类号： H01L21/76829 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76835

    摘要： Methods and apparatus are provided for processing a substrate with an ultraviolet curing process. In one aspect, the invention provides a method for processing a substrate including depositing a silicon carbide dielectric layer on a substrate surface and curing the silicon carbide dielectric layer with ultra-violet curing radiation. The silicon carbide dielectric layer may comprise a nitrogen containing silicon carbide layer, an oxygen containing silicon carbide layer, or a phenyl containing silicon carbide layer. The silicon carbide dielectric layer may be used as a barrier layer, an etch stop, or as an anti-reflective coating in a damascene formation technique.

    摘要翻译： 提供了用紫外线固化方法处理衬底的方法和装置。 一方面，本发明提供了一种处理衬底的方法，包括在衬底表面上沉积碳化硅电介质层并用紫外线固化辐射固化碳化硅电介质层。 碳化硅电介质层可以包括含氮碳化硅层，含氧碳化硅层或含有碳化硅的苯基层。 在大马士革形成技术中，碳化硅电介质层可用作阻挡层，蚀刻停止层或抗反射涂层。