摘要:
An airfoil assembly includes an airfoil extending away from a platform. One or more cooling circuits are formed through the platform in order to provide cooling of the platform. The cooling circuit may include a downwardly directed inlet receiving cooling air from below the platform. The cooling air is then directed in a direction generally parallel to the outer surface of the platform and through exits formed through the outer surface of the platform. The cooling circuit may optionally include a plurality of pedestals extending from an outer wall to an inner wall of the cooling circuit to increase the rigidity and the cooling function of the cooling circuit.
摘要:
A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.
摘要:
A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.
摘要:
A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
摘要:
Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要:
A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要:
System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.
摘要:
A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources. The source can be arranged to provide substantively uniform illumination, or can illuminate according to a non-uniform intensity distribution to compensate for existing non-uniformities in the plasma density or in the plasma process. Such sources can be embedded in the inner or outer electrode part of a multi-piece showerhead electrode assembly, or elsewhere in the chamber.
摘要:
A vibration data collection and rotating machinery fault diagnostic instrument includes a machine setup engine, a measurement engine, a diagnostic engine, a measurement user interface module, a machine setup user interface module, and a diagnostic user interface module. The machine setup engine requests and receives parameters about the machinery through the machine setup user interface module. The measurement engine requests and receives sensor placement locations through the measurement user interface module and keeps track of locations that have been measured and locations that still need to be measured. The diagnostic engine diagnoses machinery faults and presents the information to the user through the diagnostic user interface module using an intuitive graphical severity scale.
摘要:
A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.