摘要:
A thermal management device for a circuit substrate having at least a first heat generating component and at least a second heat generating component, the thermal management device includes a first thermal spreader and a second thermal spreader. The second thermal spreader is mountable to the circuit substrate to thermally couple with the second heat generating component. Additionally, the second thermal spreader is adapted to couple to the first thermal spreader to thermally couple the first thermal spreader to the first heat generating component when the second thermal spreader is mounted to the circuit substrate. The thermal management device also includes a bias device that is coupled to the first thermal spreader and the second thermal spreader and is adapted to maintain the thermal coupling between the first thermal spreader and the first heat generating component when the second thermal spreader is mounted to the circuit substrate.
摘要:
A thermal management device for a circuit substrate having at least a first heat generating component and at least a second heat generating component, the thermal management device includes a first thermal spreader and a second thermal spreader. The second thermal spreader is mountable to the circuit substrate to thermally couple with the second heat generating component. Additionally, the second thermal spreader is adapted to couple to the first thermal spreader to thermally couple the first thermal spreader to the first heat generating component when the second thermal spreader is mounted to the circuit substrate. The thermal management device also includes a bias device that is coupled to the first thermal spreader and the second thermal spreader and is adapted to maintain the thermal coupling between the first thermal spreader and the first heat generating component when the second thermal spreader is mounted to the circuit substrate.
摘要:
A thermal management device for a circuit substrate having at least a first heat generating component and at least a second heat generating component, the thermal management device includes a first thermal spreader and a second thermal spreader. The second thermal spreader is mountable to the circuit substrate to thermally couple with the second heat generating component. Additionally, the second thermal spreader is adapted to couple to the first thermal spreader to thermally couple the first thermal spreader to the first heat generating component when the second thermal spreader is mounted to the circuit substrate. The thermal management device also includes a bias device that is coupled to the first thermal spreader and the second thermal spreader and is adapted to maintain the thermal coupling between the first thermal spreader and the first heat generating component when the second thermal spreader is mounted to the circuit substrate.
摘要:
The present disclosure relates to a thermal management apparatus used to manage temperature of components mounted to a circuit substrate, such as electronic or optical components. The apparatus includes a heat dissipation structure that includes at least one protrusion extending from a surface of the heat dissipation structure. A carrier structure is also included and engages with the heat dissipation structure. The carrier structure includes an aperture that receives the at least one protrusion. Additionally, the apparatus includes at least one biasing structure that is configured to allow movement of the heat dissipation structure relative to the carrier structure and provides a biasing force tending to move the heat dissipation structure and carrier structure together.
摘要:
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要:
A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.
摘要:
Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.
摘要:
A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in the internal cavity for thermal contact with the first semiconductor chip and the circuit board.
摘要:
A semiconductor chip device includes a first semiconductor chip adapted to be stacked with a second semiconductor chip wherein the second semiconductor chip includes a side and first and second conductor structures projecting from the side. The first semiconductor chip includes a first edge, a first conductor pad, a first conductor pillar positioned on but laterally offset from the first conductor pad toward the first edge and that has a first lateral dimension and is adapted to couple to one of the first and second conductor structures, a second conductor pad positioned nearer the first edge than the first conductor pad, and a second conductor pillar positioned on but laterally offset from the second conductor pad and that has a second lateral dimension larger than the first lateral dimension and is adapted to couple to the other of the first and second conductor structures.
摘要:
A semiconductor chip device includes a first semiconductor chip adapted to be stacked with a second semiconductor chip wherein the second semiconductor chip includes a side and first and second conductor structures projecting from the side. The first semiconductor chip includes a first edge, a first conductor pad, a first conductor pillar positioned on but laterally offset from the first conductor pad toward the first edge and that has a first lateral dimension and is adapted to couple to one of the first and second conductor structures, a second conductor pad positioned nearer the first edge than the first conductor pad, and a second conductor pillar positioned on but laterally offset from the second conductor pad and that has a second lateral dimension larger than the first lateral dimension and is adapted to couple to the other of the first and second conductor structures.