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公开(公告)号：US20180337310A1
公开(公告)日：2018-11-22
申请号：US16049771
申请日：2018-07-30
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting
Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
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公开(公告)号：US20160329461A1
公开(公告)日：2016-11-10
申请号：US15135573
申请日：2016-04-22
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。
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公开(公告)号：US20160247974A1
公开(公告)日：2016-08-25
申请号：US15045279
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting
Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
Abstract translation: 包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极和布拉格反射器结构的发光二极管。 发光层被配置为发射光束并且位于第一类型半导体层和第二类型半导体层之间。 光束在发光波长范围内具有峰值波长。 第一型半导体层，发光层和第二类型半导体层位于布拉格反射器结构的同一侧。 至少覆盖0.8X〜1.8Xnm的反射波长范围内，布拉格反射体结构的反射率大于或等于95％，X是发光波长范围的峰值波长。
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公开(公告)号：US10734551B2
公开(公告)日：2020-08-04
申请号：US16659548
申请日：2019-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US10453999B2
公开(公告)日：2019-10-22
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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Patent Agency Ranking
公开(公告)号：US20180130926A1
公开(公告)日：2018-05-10
申请号：US15727545
申请日：2017-10-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Sheng-Tsung Hsu , Yu-Chen Kuo , Chih-Ming Shen , Tung-Lin Chuang , Tsung-Syun Huang , Jing-En Huang
CPC classification number: H01L33/382 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.
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公开(公告)号：US10608144B2
公开(公告)日：2020-03-31
申请号：US15975743
申请日：2018-05-09
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
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公开(公告)号：US20180261729A1
公开(公告)日：2018-09-13
申请号：US15975743
申请日：2018-05-09
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
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公开(公告)号：US20180261727A1
公开(公告)日：2018-09-13
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20160240732A1
公开(公告)日：2016-08-18
申请号：US15045264
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L33/10
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
Abstract translation: 发光部件包括外延结构，粘合层，第一反射层，第二反射层，阻挡层，第一电极和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 粘合剂层设置在外延结构的第二半导体层上。 第一反射层设置在粘合剂层上。 第二反射层设置在第一反射层上并延伸到粘合剂层上。 第二反射层的投影面积大于第一反射层的投影面积。 阻挡层设置在第二反射层上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。
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