MEMORY MODULE USING OPTICAL SIGNAL
    1.
    发明申请
    MEMORY MODULE USING OPTICAL SIGNAL 有权
    使用光信号的存储模块

    公开(公告)号:US20130028033A1

    公开(公告)日:2013-01-31

    申请号:US13646936

    申请日:2012-10-08

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    IPC分类号: G11C7/00

    摘要: Disclosed is a memory module which includes a memory chip; an external input/output terminal having an electrical signal input/output terminal and an optical signal input/output terminal; an optical signal processor configured to convert a first optical signal input through the optical signal input/output terminal into a first internal electrical signal and to convert a second internal electrical signal into a second optical signal; and a controller configured to provide a first data signal to the memory chip in response to a first external electrical signal input through the electrical signal input/output terminal or the first internal electrical signal and to transfer the second internal electrical signal to the optical signal processor or to output a second external electrical signal to the electrical signal input/output terminal in response to a second data signal output from the memory chip.

    摘要翻译: 公开了一种存储器模块,其包括存储器芯片; 具有电信号输入/输出端和光信号输入/输出端的外部输入/输出端; 光信号处理器,被配置为将通过所述光信号输入/输出端输入的第一光信号转换为第一内部电信号并将第二内部电信号转换为第二光信号; 以及控制器,被配置为响应于通过电信号输入/输出端或第一内部电信号输入的第一外部电信号向存储器芯片提供第一数据信号,并将第二内部电信号传送到光信号处理器 或者响应于从存储器芯片输出的第二数据信号,向电信号输入/输出端输出第二外部电信号。

    Semiconductor module, module substrate structure, and method of fabricating the same
    2.
    发明申请
    Semiconductor module, module substrate structure, and method of fabricating the same 审中-公开
    半导体模块,模块基板结构及其制造方法

    公开(公告)号:US20080180919A1

    公开(公告)日:2008-07-31

    申请号:US11785477

    申请日:2007-04-18

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    IPC分类号: H05K7/02 H01L21/56

    摘要: A module substrate structure may include a substrate, a passive device mounted on the substrate, and a protection layer covering the passive device. The protection layer may cover the passive device either completely or partly. Where a plurality of passive devices are present, the protection layer may cover either all or a selected number of the passive devices. A semiconductor module may include the module substrate structure in addition to a semiconductor chip mounted on the substrate, and an encapsulant covering the substrate. The semiconductor chip may be electrically connected to the passive device. Manufacturing processes (e.g., plasma treatment) may cause the passive device to be bombarded by ions and become electrically charged. Consequently, the electrical charges built up in the passive device may discharge (flow) and cause damage to the semiconductor chip. Accordingly, a protection layer covering the passive device may reduce (if not prevent) the possibility of damage to the semiconductor chip during manufacturing processes that may cause the passive device to become electrically charged.

    摘要翻译: 模块衬底结构可以包括衬底,安装在衬底上的无源器件以及覆盖无源器件的保护层。 保护层可以完全或部分覆盖无源器件。 在存在多个无源设备的地方,保护层可以覆盖全部或选定数量的被动设备。 除了安装在基板上的半导体芯片之外,半导体模块还可以包括模块基板结构,以及覆盖基板的密封剂。 半导体芯片可以电连接到无源器件。 制造工艺(例如,等离子体处理)可能导致无源器件被离子轰击并变成带电的。 因此,在无源器件中积聚的电荷可能会放电(流动)并导致对半导体芯片的损坏。 因此,覆盖无源器件的保护层可以减少(如果不防止)可能导致无源器件变得带电的制造过程期间对半导体芯片的损坏的可能性。

    Semiconductor module and data memory module having the same
    3.
    发明授权
    Semiconductor module and data memory module having the same 有权
    半导体模块和数据存储模块具有相同的功能

    公开(公告)号:US08493706B2

    公开(公告)日:2013-07-23

    申请号:US12776882

    申请日:2010-05-10

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    摘要: A semiconductor module and a data memory module having the same are provided. The semiconductor module includes a substrate having a semiconductor device, a ground terminal, a protection pattern, and a switching element. The ground terminal and the protection pattern are formed on the substrate. The switching element connects the ground terminal and the protection pattern in series. The switching element electrically connects the protection pattern and the ground terminal when a voltage applied to the substrate is beyond a set voltage range.

    摘要翻译: 提供了具有该半导体模块和数据存储模块的半导体模块。 半导体模块包括具有半导体器件,接地端子,保护图案和开关元件的衬底。 接地端子和保护图案形成在基板上。 开关元件串联连接接地端子和保护模式。 当施加到衬底的电压超过设定电压范围时,开关元件将保护图案和接地端子电连接。

    Memory module having high data processing rate
    4.
    发明授权
    Memory module having high data processing rate 有权
    内存模块具有较高的数据处理速率

    公开(公告)号:US08174861B2

    公开(公告)日:2012-05-08

    申请号:US13034972

    申请日:2011-02-25

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    IPC分类号: G11C13/04 G01J1/32

    摘要: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

    摘要翻译: 提供具有高数据处理速率和高容量的存储器模块。 存储器模块可以包括存储器芯片,控制存储器芯片的操作的控制器,将外部输入信号转换为内部输入信号以将转换的信号传输到控制器的光学检测器,以及转换内部输出信号的光学发生器 从控制器接收到外部输出信号。 光学检测器将外部输入光信号转换为内部输入信号,以将转换的信号传送到控制器。 光发生器将从控制器接收的内部输出信号转换为外部输出光信号。

    Memory module having high data processing rate
    6.
    发明授权
    Memory module having high data processing rate 有权
    内存模块具有较高的数据处理速率

    公开(公告)号:US08625323B2

    公开(公告)日:2014-01-07

    申请号:US13453333

    申请日:2012-04-23

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    IPC分类号: G11C13/04 G01J1/32

    摘要: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

    摘要翻译: 提供具有高数据处理速率和高容量的存储器模块。 存储器模块可以包括存储器芯片,控制存储器芯片的操作的控制器,将外部输入信号转换为内部输入信号以将转换的信号传输到控制器的光学检测器,以及转换内部输出信号的光学发生器 从控制器接收到外部输出信号。 光学检测器将外部输入光信号转换为内部输入信号,以将转换的信号传送到控制器。 光发生器将从控制器接收的内部输出信号转换为外部输出光信号。

    Memory module having high data processing rate
    7.
    发明授权
    Memory module having high data processing rate 有权
    内存模块具有较高的数据处理速率

    公开(公告)号:US07916512B2

    公开(公告)日:2011-03-29

    申请号:US11871913

    申请日:2007-10-12

    申请人: Gwang-Man Lim

    发明人: Gwang-Man Lim

    IPC分类号: G11C13/04 G01J1/32

    摘要: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

    摘要翻译: 提供具有高数据处理速率和高容量的存储器模块。 存储器模块可以包括存储器芯片,控制存储器芯片的操作的控制器,将外部输入信号转换为内部输入信号以将转换的信号传输到控制器的光学检测器,以及转换内部输出信号的光学发生器 从控制器接收到外部输出信号。 光学检测器将外部输入光信号转换为内部输入信号,以将转换的信号传送到控制器。 光发生器将从控制器接收的内部输出信号转换为外部输出光信号。