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13 条记录 (耗时 0.027 秒)

    Method and apparatus for measuring inclination angle of ion beam
    1.
    发明授权
    Method and apparatus for measuring inclination angle of ion beam 失效
    用于测量离子束倾斜角的方法和装置

    公开(公告)号：US06858854B2

    公开(公告)日：2005-02-22

    申请号：US10401548

    申请日：2003-03-31

    申请人： Gyeong-Su Keum ,  Jae-Im Yun ,  Hyung-Sik Hong ,  Chung-Hun Park ,  Wan-Goo Hwang

    发明人： Gyeong-Su Keum ,  Jae-Im Yun ,  Hyung-Sik Hong ,  Chung-Hun Park ,  Wan-Goo Hwang

    IPC分类号： H01L21/26 ,  H01J37/304 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/3045 ,  H01J2237/30472

    摘要： A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

    摘要翻译： 当离子注入到半导体晶片中时，用于测量离子束的倾斜角度的方法和装置包括具有可旋转地安装的法拉第杯组件的离子电流测量部分，用于调节法拉第的对准角度的角度变化部分 杯组件和倾斜角度测量部分，用于基于由法拉第杯组件的对准角度的变化引起的离子电流的变化来测量离子束的倾斜角。 通过测量离子束的倾斜角度，可以将离子注入过程中入射到晶片中的离子束的入射角精确地调节到预定的临界角。 因此，可以有效地防止引导效果和阴影效应。 可以精确地测量离子束中包含的离子的量，因此可以精确地调节注入到晶片中的离子的量。

    Polarity exchanger and ion implanter having the same
    3.
    发明授权
    Polarity exchanger and ion implanter having the same 失效
    极性交换器和离子注入机具有相同的特性

    公开(公告)号：US06903336B2

    公开(公告)日：2005-06-07

    申请号：US10730998

    申请日：2003-12-10

    申请人： Gyeong-Su Keum ,  Gum-Hyun Shin ,  Hyung-Sik Hong ,  Kyue-Sang Choi ,  Chung-Hun Park

    发明人： Gyeong-Su Keum ,  Gum-Hyun Shin ,  Hyung-Sik Hong ,  Kyue-Sang Choi ,  Chung-Hun Park

    IPC分类号： H01J37/30 ,  H01J37/08 ,  H01J37/317 ,  H01J37/313

    CPC分类号： H01J37/3171 ,  H01J37/08

    摘要： A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.

    摘要翻译： 极性交换器和离子注入机包括用于使离子束通过的剥离管，用于将汽提气体提供到汽提道中以改变离子束的极性的气体供应单元，用于循环汽提气体的气体循环单元 用于测量汽提气体的流量的流量计，用于测量施加到用于操作气体循环单元的气体循环单元的驱动电流的电流表，以及用于产生控制信号以控制改变极性的处理的监视单元 离子束根据测得的汽提气体流速和测得的驱动电流。 具有极性交换器的极性交换器和离子注入机可以防止由汽提气体的流量变化或气体循环单元的部件的劣化引起的金属污染物的产生。

    Heater assembly for heating a wafer
    4.
    发明授权
    Heater assembly for heating a wafer 失效
    用于加热晶片的加热器组件

    公开(公告)号：US06720533B2

    公开(公告)日：2004-04-13

    申请号：US10216913

    申请日：2002-08-13

    申请人： Gyeong-Su Keum ,  Hyung-Sik Hong ,  Chung-Hun Park ,  Eun-Seok Song ,  Jae-Han Park

    发明人： Gyeong-Su Keum ,  Hyung-Sik Hong ,  Chung-Hun Park ,  Eun-Seok Song ,  Jae-Han Park

    IPC分类号： F27D1100

    CPC分类号： H01L21/67103 ,  H05B3/28 ,  H05B2203/013 ,  H05B2203/017

    摘要： A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.

    摘要翻译： 半导体器件制造装置的加热器组件使装置内正在处理的晶片的周边部分和中心部分之间的温度差最小化。 加热器组件包括盘形式的单一电阻加热构件，将盘的上表面的周边部分和中心部分分成相应加热部分的加热块，用于支撑加热构件的支撑件和电力 用于向单一加热构件提供电流的源。 加热部分的宽度朝着加热器的中心变大，因此加热器的电阻也朝向加热器中心的方向增加。 加热器的电源包括从加热器的底表面延伸到加热器支撑件的底部的引线。

    Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system
    7.
    发明授权
    Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system 失效
    半导体晶圆处理系统高压室实时参数监控装置

    公开(公告)号：US06590378B2

    公开(公告)日：2003-07-08

    申请号：US09996586

    申请日：2001-11-30

    申请人： Sang-Mun Chon ,  Gyeong-Su Keum ,  Hyung-Sik Hong

    发明人： Sang-Mun Chon ,  Gyeong-Su Keum ,  Hyung-Sik Hong

    IPC分类号： G01R3100

    CPC分类号： G01R15/241

    摘要： A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.

    摘要翻译： 用于半导体晶片处理系统中的高压室的参数监视装置通过使用电光转换器将从高压室产生的电信号转换为光信号来实时监视高压室中的参数。 然后光信号再次通过光电转换器转换回电信号。 可以实时监测参数，而不会损坏测量装置，因为它们不受高压室和测量装置之间的电位差的影响。

    Method of and apparatus for use in orienting an object at a reference angle
    8.
    发明授权
    Method of and apparatus for use in orienting an object at a reference angle 失效
    用于在参考角度定向物体的方法和装置

    公开(公告)号：US06705020B2

    公开(公告)日：2004-03-16

    申请号：US10140074

    申请日：2002-05-08

    申请人： Gyeong-Su Keum ,  Hyung-Sik Hong ,  Yun-Sik Yang ,  Gum-Chan An ,  Hae-Keun Youn ,  Byoung-Sik Jung ,  Ki-Cheol Choi

    发明人： Gyeong-Su Keum ,  Hyung-Sik Hong ,  Yun-Sik Yang ,  Gum-Chan An ,  Hae-Keun Youn ,  Byoung-Sik Jung ,  Ki-Cheol Choi

    IPC分类号： G01B525

    CPC分类号： H01L21/68 ,  H01J2237/20292 ,  H01J2237/31701

    摘要： An apparatus for use in orienting an object at a reference angle includes a pin gauge having at least two projections located at an end of the body of the apparatus. The projections are located at certain X Y coordinates of an X, Y Z Cartesian coordinate system. A horizontal support supports the body so as to be movable horizontally in the longitudinal direction of the projections. A mechanical drive member is operable to move the body mechanically in the horizontal direction. The apparatus may also include a vertical support and vertical drive member. The pin gauge is mechanically moved into contact with a surface of an object to provide a reference angle for the object. Then the object is pivoted, if necessary, to bring the surface into point contact with all of the projections of the pin gauge, whereupon the object is oriented at the reference angle. Process errors in aligning the object using the reference angle are reduced because the orienting of the object at the reference angle is accomplished using mechanical elements.

    摘要翻译： 用于以参考角度定向物体的装置包括具有至少两个突出部的销规，所述突出部位于装置主体的端部。 投影位于X，Y Z笛卡尔坐标系的某个X Y坐标。 水平支撑件支撑主体，以便能够在突起的纵向方向上水平移动。 机械驱动构件可操作以在水平方向上机械地移动机体。 该装置还可以包括垂直支撑和垂直驱动构件。 针规被机械地移动与物体的表面接触以提供对象的参考角度。 然后，如果需要，物体被枢转以使表面与针规的所有突起点接触，于是物体以参考角度定向。 使用参考角对准对象的处理误差减小，因为使用机械元件来实现对象在参考角度的定向。

    Plasma doping method and plasma doping apparatus for performing the same
    9.
    发明申请
    Plasma doping method and plasma doping apparatus for performing the same 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070087584A1

    公开(公告)日：2007-04-19

    申请号：US11542639

    申请日：2006-10-04

    申请人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    发明人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01J37/32422 ,  H01J37/32412 ,  H01J37/32577 ,  H01L21/2236

    摘要： In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.

    摘要翻译： 在使用等离子体将离子掺杂到诸如衬底的物体的方法中，可以在腔室中的第一和第二电极之间提供掺杂气体。 可以在第一和第二电极之间形成电场，以将掺杂气体激发到等离子体状态。 电场可以通过施加具有第一正电位的第一电力和具有第二正电位的第二电力而形成，第二正电位高于第一正电位。 电场可以通过阻止第二功率施加到第二电极而在方向上反转。 可以通过向基板引入电子来有效地中和衬底上的累积离子，从而可以防止产生电弧。