摘要:
A heater assembly of a semiconductor device manufacturing apparatus minimizes a temperature difference between a peripheral portion and a central portion of the wafer being processed in the apparatus. The heater assembly includes a unitary resistive heating member in the form of a disc, heat blocks that divide the peripheral portion and central portion of the upper surface of the disc into respective heating sections, a support for supporting the heating member, and an electric power source for supplying electric current to the unitary heating member. The widths of the heating sections become greater towards the center of the heater, and thus the electrical resistance of the heater also increases in a direction towards the center of the heater. The power source for the heater includes a lead that extends from the bottom surface of the heater to a bottom portion of the heater support.
摘要:
Provided is a chip-on-board package. The chip-on-board package may include a board, a grounding pad on a first surface of the board, the grounding pad including a body portion and at least one line portion, and at least two conductive pads on the first surface, the at least two conductive pads being arranged adjacent to the body portion. The at least one line portion may extend between the at least two conductive pads and the at least one line portion may have a narrower width than the at least two conductive pads.
摘要:
A semiconductor package includes a semiconductor chip having first and second pads, a first insulation layer pattern formed on the semiconductor chip and having first and second openings that expose the first and the second pads, respectively, a first conductive layer pattern elongated along the first insulation layer pattern from the first pad, a first external terminal formed on the first conductive layer pattern, a second insulation layer pattern formed on the first conductive layer pattern and the first insulation layer pattern to expose the first external terminal and having a third opening in communication with the second opening, a second conductive layer pattern elongated along the second insulation layer pattern from the second pad, and a second external terminal formed on the second conductive layer pattern.
摘要:
A chip-on-film package may include a tape wiring substrate, a semiconductor chip mounted on the tape wiring substrate, and a molding compound provided between the semiconductor chip and the tape wiring substrate. The tape wiring substrate may include a film having upper and lower surfaces. Vias may penetrate the film. An upper metal layer may be provided on the upper surface of the film and include input terminal patterns and/or output terminal patterns. The input terminal patterns may include ground terminal patterns and/or power terminal patterns. A lower metal layer may be provided on the lower surface of the film and include a ground layer and/or a power layer. The ground layer and the power layer may cover at least a chip mounting area.
摘要:
A structure for blocking electromagnetic interference (EMI) may include at least one electromagnetic wave inducing member and an electromagnetic wave filtering member. The at least one electromagnetic wave inducing member may be provided to an electronic device to induce an electromagnetic wave applied to the electronic device. The electromagnetic wave filtering member may be provided to the electronic device to filter the electromagnetic wave induced by the at least one electromagnetic wave inducing member. Thus, the electromagnetic wave filtering member may remove the electromagnetic wave concentrated on the at least one electromagnetic wave inducing member, so that the electromagnetic wave applied to the electronic device may be effectively removed. As a result, circuits in the electronic device may be protected from the EMI.
摘要:
A chip-on-film package may include a tape wiring substrate, a semiconductor chip mounted on the tape wiring substrate, and a molding compound provided between the semiconductor chip and the tape wiring substrate. The tape wiring substrate may include a film having upper and lower surfaces. Vias may penetrate the film. An upper metal layer may be provided on the upper surface of the film and include input terminal patterns and/or output terminal patterns. The input terminal patterns may include ground terminal patterns and/or power terminal patterns. A lower metal layer may be provided on the lower surface of the film and include a ground layer and/or a power layer. The ground layer and the power layer may cover at least a chip mounting area.
摘要:
A semiconductor package includes a semiconductor chip having first and second pads, a first insulation layer pattern formed on the semiconductor chip and having first and second openings that expose the first and the second pads, respectively, a first conductive layer pattern elongated along the first insulation layer pattern from the first pad, a first external terminal formed on the first conductive layer pattern, a second insulation layer pattern formed on the first conductive layer pattern and the first insulation layer pattern to expose the first external terminal and having a third opening in communication with the second opening, a second conductive layer pattern elongated along the second insulation layer pattern from the second pad, and a second external terminal formed on the second conductive layer pattern.
摘要:
A chip-on-film package may include a tape wiring substrate, a semiconductor chip mounted on the tape wiring substrate, and a molding compound provided between the semiconductor chip and the tape wiring substrate. The tape wiring substrate may include a film having upper and lower surfaces. Vias may penetrate the film. An upper metal layer may be provided on the upper surface of the film and include input terminal patterns and/or output terminal patterns. The input terminal patterns may include ground terminal patterns and/or power terminal patterns. A lower metal layer may be provided on the lower surface of the film and include a ground layer and/or a power layer. The ground layer and the power layer may cover at least a chip mounting area.
摘要:
An apparatus and method for high-resolution reflectometry that operates simultaneously in both the time and frequency domains, utilizing time-frequency signal analysis and a chirp signal multiplied by a Gaussian time envelope. The Gaussian envelope provides time localization, while the chirp allows one to excite the system under test with a swept sinewave covering a frequency band of interest. High resolution in detection of the reflected signal is provided by a time-frequency cross correlation function. The high-accuracy localization of faults in a wire/cable can be achieved by measurement of time delay offset obtained from the frequency offset of the reflected signal. The apparatus enables one to execute an automated diagnostic procedure of a wire/cable under test by control of peripheral devices.
摘要:
A semiconductor package features a ring-shaped silicon decoupling capacitor that reduces simultaneous switching noise. The decoupling capacitor is fabricated on a substrate from silicon using a wafer fabrication process and takes the form of an annular capacitive structure that extends around a periphery of a substrate-mounted integrated circuit (IC). The decoupling capacitor has a reduced thickness on or below a chip level and takes the place of a conventional power/ground ring. Therefore, the decoupling capacitor can be disposed within the package without increasing the thickness and the size of the package. The decoupling capacitor may be coupled to various power pins, allowing optimum wire bonding, shortened electrical connections, and reduced inductance. Bonding wires connected to the decoupling capacitor have higher specific resistance, lowering the peak of the resonance frequency and thereby reducing simultaneous switching noise.