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    Industrial radiant heater
    1.
    发明申请
    Industrial radiant heater 审中-公开
    工业辐射加热器

    公开(公告)号：US20070105060A1

    公开(公告)日：2007-05-10

    申请号：US11266926

    申请日：2005-11-04

    申请人： Haiyong Cai ,  Andrzej Krzywicki ,  Leslie Benum ,  Hong Ma

    发明人： Haiyong Cai ,  Andrzej Krzywicki ,  Leslie Benum ,  Hong Ma

    IPC分类号： F23G7/08

    CPC分类号： F23D14/125 ,  F23C13/08 ,  F23D14/18

    摘要： High temperature industrial radiant heaters may be improved by coating a refractory or lining in and adjacent to the flame impingement zone which refractory or lining does not transmit fuel to the burner with a metal oxide catalyst or metal oxide catalyst precursor other than iron, iron oxides or mixtures thereof, to promote the burning of one or more of the fuel, and combustion products thereof.

    摘要翻译： 高温工业辐射加热器可以通过在火焰冲击区域内和邻近的火焰冲击区域上涂覆耐火材料或内衬来改善，该耐火材料或衬里不用燃料将燃料传送到具有除铁，氧化铁之外的金属氧化物催化剂或金属氧化物催化剂前体的燃烧器 其混合物，以促进一种或多种燃料及其燃烧产物的燃烧。

    Recombinant gene which enhances the ability of fish to tolerate low dissolved oxygen stress and the use thereof
    2.
    发明授权
    Recombinant gene which enhances the ability of fish to tolerate low dissolved oxygen stress and the use thereof 失效
    提高鱼容忍低溶解氧应激能力的重组基因及其应用

    公开(公告)号：US08546644B2

    公开(公告)日：2013-10-01

    申请号：US12879931

    申请日：2010-09-10

    申请人： Wei Hu ,  Zuoyan Zhu ,  Hong Ma ,  Bo Guan ,  Yuanlei Hu ,  Zhongping Lin

    发明人： Wei Hu ,  Zuoyan Zhu ,  Hong Ma ,  Bo Guan ,  Yuanlei Hu ,  Zhongping Lin

    IPC分类号： A01K67/027 ,  C12N15/85 ,  C12N15/873 ,  C12N15/90

    CPC分类号： C12N15/8509 ,  A01K2227/40 ,  A01K2267/02 ,  C07K14/805 ,  C12N2830/85

    摘要： The invention discloses a recombinant gene which enhances the ability of fish to tolerate low dissolved oxygen (DO) stress and the use thereof. Carp β-actin gene promoter is used as a promoter and Vitreoscilla hemoglobin gene is used as a target gene, so as to construct the recombinant Vitreoscilla hemoglobin gene driven by carp β-actin promoter. The modeling organism zebrafish is used as the research object, and the recombinant gene is microinjected into zygotes of zebrafish. After PCR screening and 156 h low DO stress test, transgenic fish are obtained with a survival rate of 92%, which is significantly different from the survival rate of 65% of the control fish group. The vhb transgenic zebrafish obtain hypoxia tolerance. When the recombinant gene is applied to the economically farmed species, i.e., blunt snout bream (Megalobrama amblycephala) and common carp (Cyprinus carpio L.), it enhances their hypoxia tolerance as well. Such genetically improved breeding technique may be widely used for breeding new excellent farmed species with the hypoxia tolerance.

    摘要翻译： 本发明公开了一种提高鱼耐受低溶解氧（DO）应力的能力及其用途的重组基因。 将鲤鱼β-肌动蛋白基因启动子用作启动子，并使用透明颤菌血红蛋白基因作为靶基因，构建由鲤鱼β-肌动蛋白启动子驱动的重组透明颤菌血红蛋白基因。 将造型生物斑马鱼作为研究对象，将重组基因显微注射到斑马鱼的合子中。 PCR筛选和156小时DO胁迫试验后，获得转基因鱼的成活率为92％，与对照鱼组65％的存活率显着不同。 vhb转基因斑马鱼获得缺氧耐受。 当将重组基因应用于经济养殖的物种，即钝鼻鲷（Megalobrama amblycephala）和鲤鱼（Cyprinus carpio L.）时，也增强了它们的缺氧耐受性。 这种遗传改良育种技术可广泛用于育种具有缺氧耐受性的新优良种植品种。

    METHOD OF ETCHING A DIELECTRIC LAYER
    3.
    发明申请
    METHOD OF ETCHING A DIELECTRIC LAYER 审中-公开
    蚀刻电介质层的方法

    公开(公告)号：US20090314743A1

    公开(公告)日：2009-12-24

    申请号：US12142799

    申请日：2008-06-20

    申请人： Hong Ma

    发明人： Hong Ma

    IPC分类号： C23F1/02

    CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76813

    摘要： A method of etching a dielectric layer includes providing a substrate, which includes a dielectric layer and a metal layer, performing a first etching process on the metal layer, and performing a second etching process on the dielectric layer to form a opening in the dielectric layer. The first etching process and the second etching process are in-situ carried out in the same reaction chamber without a vent. Since the first and second etching processes are not performed in different reaction chambers respectively, the cycle time can therefore be improved in the present invention. Because the first and second etching processes are performed without a vent, the substrate is protected from the pollution existing in surrounding.

    摘要翻译： 蚀刻电介质层的方法包括提供包括电介质层和金属层的衬底，对金属层进行第一蚀刻工艺，并在电介质层上进行第二蚀刻工艺以在电介质层中形成开口 。 第一蚀刻工艺和第二蚀刻工艺在没有通气孔的情况下在相同的反应室中原位进行。 由于第一和第二蚀刻工艺不是在不同的反应室中进行，所以在本发明中可以改善循环时间。 由于第一和第二蚀刻工艺在没有通风口的情况下进行，所以基板被保护免受周围存在的污染。

    Two-step method for etching a fuse window on a semiconductor substrate
    4.
    发明授权
    Two-step method for etching a fuse window on a semiconductor substrate 有权
    用于蚀刻半导体衬底上的熔丝窗的两步法

    公开(公告)号：US07622395B2

    公开(公告)日：2009-11-24

    申请号：US11616300

    申请日：2006-12-27

    申请人： Shi-Jie Bai ,  Hong Ma

    发明人： Shi-Jie Bai ,  Hong Ma

    IPC分类号： H01L21/302

    CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A two-step method for etching a fuse window on a semiconductor substrate is provided. A semiconductor substrate having thereon a fuse interconnect-wire is formed in a dielectric film stack. The dielectric film stack includes a target dielectric layer overlying said fuse interconnect-wire, an intermediate dielectric layer and a passivation layer. A photoresist layer is formed on the passivation layer with an opening that defines said fuse window. A first dry etching process is performed to non-selectively etch the passivation layer and the intermediate dielectric layer through the opening thereby exposing the target dielectric layer. The thickness of the target dielectric layer after the first dry etching process is then measured. An APC-controlled second dry etching process is performed to etch a portion of the exposed target dielectric layer, thereby reliably forming the fuse window.

    摘要翻译： 提供了用于蚀刻半导体衬底上的熔丝窗的两步法。 具有熔丝互连线的半导体衬底形成在电介质膜叠层中。 电介质膜堆叠包括覆盖所述熔丝互连线的目标介电层，中间介电层和钝化层。 在钝化层上形成具有限定所述熔丝窗的开口的光致抗蚀剂层。 执行第一干蚀刻工艺以通过开口非选择性地蚀刻钝化层和中间介电层，从而暴露目标介电层。 然后测量第一干蚀刻工艺之后的目标介电层的厚度。 执行APC控制的第二干蚀刻工艺以蚀刻暴露的目标介电层的一部分，从而可靠地形成熔丝窗。

    Single LTR lentivirus vector
    5.
    发明授权
    Single LTR lentivirus vector 失效
    单LTR慢病毒载体

    公开(公告)号：US07220578B2

    公开(公告)日：2007-05-22

    申请号：US10721563

    申请日：2003-11-25

    申请人： Tal Kafri ,  Hong Ma

    发明人： Tal Kafri ,  Hong Ma

    IPC分类号： C12N15/00 ,  C12N15/48 ,  C12N15/867 ,  C12N15/64 ,  C07H21/04

    CPC分类号： C12N15/86 ,  C12N2740/16043 ,  C12Q1/702 ,  C12Q1/703

    摘要： The present invention provides an isolated nucleic acid comprising a single retroviral LTR, a polypurine tract, a packaging signal, a primer binding site and a rev responsive element. Further provided is an isolated nucleic acid comprising a heterologous nucleotide sequence, a single retroviral long terminal repeat (LTR), a packaging signal, a rev responsive element, a polypurine tract, a eukaryotic promoter, a primer binding site, a bacterial origin of replication and a bacterial selection marker. In addition, the present invention provides an isolated nucleic acid comprising a 5′ retroviral LTR and a 3′ retroviral LTR, a heterologous nucleotide sequence, a packaging signal, a rev responsive element, a polypurine tract, a eukaryotic promoter, a primer binding site, a bacterial origin of replication and a bacterial selection marker cassette, wherein the bacterial origin of replication and bacterial selection marker are located between the two LTRs.

    摘要翻译： 本发明提供了一种分离的核酸，其包含单个逆转录病毒LTR，多巴胺，包装信号，引物结合位点和转录响应元件。 还提供了分离的核酸，其包含异源核苷酸序列，单个逆转录病毒长末端重复（LTR），包装信号，转录响应元件，多巴胺，真核启动子，引物结合位点，细菌复制起点 和细菌选择标记。 此外，本发明提供了分离的核酸，其包含5'逆转录病毒LTR和3'逆转录病毒LTR，异源核苷酸序列，包装信号，转录响应元件，多巴胺，真核启动子，引物结合位点 ，细菌复制起点和细菌选择标记盒，其中细菌复制起点和细菌选择标记位于两个LTR之间。

    Method of processing semiconductor wafer
    6.
    发明授权
    Method of processing semiconductor wafer 有权
    半导体晶片的处理方法

    公开(公告)号：US07142940B2

    公开(公告)日：2006-11-28

    申请号：US11079995

    申请日：2005-03-14

    申请人： Hong Ma ,  Meisheng Zhou

    发明人： Hong Ma ,  Meisheng Zhou

    IPC分类号： G06F19/00

    CPC分类号： H01L22/20

    摘要： A method of processing a semiconductor wafer is provided. The semiconductor wafer is processed with a first process. After collecting the measured data that reflects the deviation of each part within the semiconductor wafer, the semiconductor wafer is processed with a second process according to the measured data to compensate the deviation from the first process and to correct any deviation in the semiconductor wafer.

    摘要翻译： 提供了一种处理半导体晶片的方法。 用第一工艺处理半导体晶片。 在收集反映半导体晶片中的每个部分的偏差的测量数据之后，根据测量数据用第二工艺处理半导体晶片，以补偿与第一工艺的偏差并校正半导体晶片中的任何偏差。

    SEMICONDUCTOR LASER PACKAGE
    10.
    发明申请
    SEMICONDUCTOR LASER PACKAGE 审中-公开
    半导体激光封装

    公开(公告)号：US20090190619A1

    公开(公告)日：2009-07-30

    申请号：US12363103

    申请日：2009-01-30

    申请人： Haihua Qi ,  Bifeng Xiong ,  Bin Jiang ,  Hong Ma

    发明人： Haihua Qi ,  Bifeng Xiong ,  Bin Jiang ,  Hong Ma

    IPC分类号： H01S5/024

    CPC分类号： H01S5/4025 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/4018

    摘要： The present invention provides a semiconductor laser package including a heat sink, a laser bar with a plurality of lasers on the heat sink, an insulated layer arranged between said heat sink and said laser bar, a solder layer combining said insulated layer with said laser bar, and a clearance crossing said solder layer defined between adjacent lasers.

    摘要翻译： 本发明提供了一种半导体激光器封装，其包括散热器，在散热器上具有多个激光器的激光棒，布置在所述散热器和所述激光棒之间的绝缘层，将所述绝缘层与所述激光棒 以及在相邻激光器之间限定的焊料层的间隙。