公开(公告)号：US08721964B2

公开(公告)日：2014-05-13

申请号：US12727938

申请日：2010-03-19

申请人： Yoichi Nakamura ,  Hideki Hirayama ,  Hideaki Matsumoto ,  Keiko Moriyama

发明人： Yoichi Nakamura ,  Hideki Hirayama ,  Hideaki Matsumoto ,  Keiko Moriyama

IPC分类号： G01N33/00

CPC分类号： G01N15/147 ,  G01N2015/0076 ,  G01N2015/0092

摘要： An animal blood cell measuring apparatus comprising: a specimen preparation section for preparing a measurement specimen from blood of an animal; a characteristic information obtaining section for obtaining characteristic information indicating a characteristic of the measurement specimen, from the measurement specimen prepared by the specimen preparation section; and a controller configured for performing operations comprising: (a) classifying aggregate reticulocytes contained in the blood from other blood cells, based on the characteristic information obtained by the characteristic information obtaining section; and (b) outputting information regarding a number of the classified aggregate reticulocytes.

摘要翻译： 一种动物血细胞测定装置，其特征在于，具备：动物的血液制作测定标本的试样准备部; 特征信息获取部分，用于从由样本制备部分准备的测量样本获得指示测量样本的特征的特性信息; 以及控制器，被配置为执行操作，所述操作包括：（a）基于由所述特征信息获取部获得的特征信息，将来自其他血细胞的血液中包含的网状细胞集合进行分类; 和（b）输出关于分类的网状细胞总数的信息。

公开(公告)号：US20100248349A1

公开(公告)日：2010-09-30

申请号：US12727938

申请日：2010-03-19

申请人： Yoichi Nakamura ,  Hideki Hirayama ,  Hideaki Matsumoto ,  Keiko Moriyama

发明人： Yoichi Nakamura ,  Hideki Hirayama ,  Hideaki Matsumoto ,  Keiko Moriyama

IPC分类号： C12M1/34

CPC分类号： G01N15/147 ,  G01N2015/0076 ,  G01N2015/0092

摘要： An animal blood cell measuring apparatus comprising: a specimen preparation section for preparing a measurement specimen from blood of an animal; a characteristic information obtaining section for obtaining characteristic information indicating a characteristic of the measurement specimen, from the measurement specimen prepared by the specimen preparation section; and a controller configured for performing operations comprising: (a) classifying aggregate reticulocytes contained in the blood from other blood cells, based on the characteristic information obtained by the characteristic information obtaining section; and (b) outputting information regarding a number of the classified aggregate reticulocytes.

摘要翻译： 一种动物血细胞测定装置，其特征在于，具备：动物的血液制作测定标本的试样准备部; 特征信息获取部分，用于从由样本制备部分准备的测量样本获得指示测量样本的特征的特性信息; 以及控制器，被配置为执行操作，所述操作包括：（a）基于由所述特征信息获取部获得的特征信息，将来自其他血细胞的血液中包含的网状细胞集合进行分类; 和（b）输出关于分类的网状细胞总数的信息。

公开(公告)号：US20090006003A1

公开(公告)日：2009-01-01

申请号：US12154773

申请日：2008-05-27

申请人： Hideki Hirayama ,  Yoichi Nakamura

发明人： Hideki Hirayama ,  Yoichi Nakamura

IPC分类号： G01N33/49

CPC分类号： G01N35/00584 ,  G01N15/1012 ,  G01N2015/0065 ,  G01N2015/0073 ,  G01N2015/008 ,  G01N2015/0084 ,  G01N2015/1486 ,  G01N2035/0091

摘要： The present invention is to present a sample analyzer which is capable of displaying a particle distribution map of a measured sample and a reference particle distribution map so as to be visually compared without reducing a display area for displaying information other than the particle distribution map. The blood analyzer 1 comprises: a display 302; a measurement unit 2 for measuring a blood sample; and a controller 301 being configured to 1) generate a particle distribution map representing a distribution of the particles contained in the blood sample, based on measurement data obtained by the measurement unit 2; and 2) control the display 302 so as to display the particle distribution map of the blood sample at a predetermined display position and to display a reference particle distribution map at the predetermined display position so as to be visually compared with the particle distribution map of the blood sample.

摘要翻译： 本发明是提供一种样本分析器，其能够显示测量样本的粒子分布图和参考粒子分布图，以便在不减少用于显示除了粒子分布图之外的信息的显示区域的情况下进行目视比较。 血液分析仪1包括：显示器302; 用于测量血液样本的测量单元2; 控制器301被配置为根据由测量单元2获得的测量数据，生成表示血样中包含的粒子的分布的粒子分布图; 以及2）控制显示器302，以便在预定的显示位置显示血液样本的粒子分布图，并在预定的显示位置显示参考粒子分布图，以便与视觉上与 血液样本。

公开(公告)号：US09322834B2

公开(公告)日：2016-04-26

申请号：US12154773

申请日：2008-05-27

申请人： Hideki Hirayama ,  Yoichi Nakamura

发明人： Hideki Hirayama ,  Yoichi Nakamura

IPC分类号： A61B5/00 ,  G01N35/00 ,  G01N15/10 ,  G01N15/00 ,  G01N15/14

CPC分类号： G01N35/00584 ,  G01N15/1012 ,  G01N2015/0065 ,  G01N2015/0073 ,  G01N2015/008 ,  G01N2015/0084 ,  G01N2015/1486 ,  G01N2035/0091

摘要： The present invention is to present a sample analyzer which is capable of displaying a particle distribution map of a measured sample and a reference particle distribution map so as to be visually compared without reducing a display area for displaying information other than the particle distribution map. The blood analyzer 1 comprises: a display 302; a measurement unit 2 for measuring a blood sample; and a controller 301 being configured to 1) generate a particle distribution map representing a distribution of the particles contained in the blood sample, based on measurement data obtained by the measurement unit 2; and 2) control the display 302 so as to display the particle distribution map of the blood sample at a predetermined display position and to display a reference particle distribution map at the predetermined display position so as to be visually compared with the particle distribution map of the blood sample.

摘要翻译： 本发明是提供一种样本分析器，其能够显示测量样本的粒子分布图和参考粒子分布图，以便在不减少用于显示除了粒子分布图之外的信息的显示区域的情况下进行目视比较。 血液分析仪1包括：显示器302; 用于测量血液样本的测量单元2; 控制器301被配置为根据由测量单元2获得的测量数据，生成表示血样中包含的粒子的分布的粒子分布图; 以及2）控制显示器302，以便在预定的显示位置显示血液样本的粒子分布图，并在预定的显示位置显示参考粒子分布图，以便与视觉上与 血液样本。

公开(公告)号：US08659669B2

公开(公告)日：2014-02-25

申请号：US12764412

申请日：2010-04-21

申请人： Hideki Hirayama ,  Naoto Iwata

发明人： Hideki Hirayama ,  Naoto Iwata

IPC分类号： H04N5/228

CPC分类号： H04N5/23248 ,  G03B2217/005

摘要： A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.

摘要翻译： 第一高通滤波器，包括低通滤波器，其仅允许小于或等于第一频率的输入信号的频率分量通过;锁存单元，其根据控制来锁存低通滤波器的输出 信号，以及输出输入信号和锁存单元的输出之间的差的计算单元设置在图像稳定电路上。 当闩锁单元中的锁存被释放时，锁存单元的保持值逐步改变为低通滤波器的输出值。 这种第一高通滤波器用于光学元件的定心过程。

公开(公告)号：US08445938B2

公开(公告)日：2013-05-21

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US08390023B2

公开(公告)日：2013-03-05

申请号：US12446081

申请日：2007-10-19

申请人： Robert David Armitage ,  Yukihiro Kondo ,  Hideki Hirayama

发明人： Robert David Armitage ,  Yukihiro Kondo ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L21/02661 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/16

摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.

摘要翻译： 本发明提供一种廉价的基板，其可以通过气相生长实现晶体的m面生长。 在蓝宝石衬底中，在生长GaN等的晶体时，准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面， 通过抛光工艺制备包括步骤和梯田的逐步底物。 根据上述结构，即使使用通常不形成m面（非极性面）GaN膜的廉价蓝宝石基板作为晶体生长用基板，也可以获得以下的效果。 具体地说，c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行，这在器件的制造中是有利的，以便生长优异的GaN单晶，其具有 被外延生长，使得m平面与平台的平面相对，并且同时，步骤被整合（熔化），由此可以从不具有显着性的GaN单晶的衬底制造器件 穿线错位 此外，使用m面可以有利地消除压电场的影响。

公开(公告)号：US08278129B2

公开(公告)日：2012-10-02

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L21/00

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

公开(公告)号：US08212879B2

公开(公告)日：2012-07-03

申请号：US12335179

申请日：2008-12-15

申请人： Yasunori Nagata ,  Tomofumi Watanabe ,  Hideki Hirayama

发明人： Yasunori Nagata ,  Tomofumi Watanabe ,  Hideki Hirayama

IPC分类号： H04N5/228

CPC分类号： H04N5/23248 ,  G02B27/646 ,  H04N5/2254

摘要： An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.

摘要翻译： 内部CPU，振动控制均衡器，用于处理用于检测成像装置的振动的振动检测器的输出信号，并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置 控制均衡器，用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部，用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换， 振动控制均衡器和位置控制均衡器。

公开(公告)号：US20100270583A1

公开(公告)日：2010-10-28

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00 ,  H01L21/04

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。