公开(公告)号：US20130186960A1

公开(公告)日：2013-07-25

申请号：US13553997

申请日：2012-07-20

申请人： Hidetoshi SUZUKI ,  Yuichi Hotta ,  Yuji Shimoda ,  Yuuji Ogawa ,  Taku Nishiyama ,  Tadanobu Okubo ,  Junichi Onodera ,  Takeshi Ikuta ,  Naohisa Okumura ,  Katsuyoshi Watanabe ,  Kazuhide Doi

发明人： Hidetoshi SUZUKI ,  Yuichi Hotta ,  Yuji Shimoda ,  Yuuji Ogawa ,  Taku Nishiyama ,  Tadanobu Okubo ,  Junichi Onodera ,  Takeshi Ikuta ,  Naohisa Okumura ,  Katsuyoshi Watanabe ,  Kazuhide Doi

IPC分类号： G06K19/077

CPC分类号： G06K19/07732 ,  H01L23/3107 ,  H01L23/49838 ,  H01L23/49855 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/165 ,  H01L25/18 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/0259 ,  H05K1/0269 ,  H05K1/113 ,  H05K1/117 ,  H05K3/284 ,  H05K3/321 ,  H05K2201/09563 ,  H05K2201/0979 ,  H05K2201/09936 ,  H05K2201/10287 ,  H05K2203/1327 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

摘要： According to one embodiment, a semiconductor storage device is provided with a memory chip including a storage circuit, a controller chip that controls a memory chip, and a substrate having a first surface and a second surface opposing one another, on the first surface of which the controller chip is mounted. Further, the semiconductor storage device is provided with an external connection terminal formed on the second surface of the substrate, and resin that encapsulates the memory chip, the controller chip, and the substrate, includes a third surface and a fourth surface opposing one another, and has a predetermined mark directly printed only on the fourth surface that is adjacent to the second surface of the substrate.

摘要翻译： 根据一个实施例，半导体存储装置设置有存储芯片，存储芯片包括存储电路，控制存储芯片的控制器芯片和具有第一表面和第二表面的基板，第一表面和第二表面在其第一表面上 安装控制器芯片。 此外，半导体存储装置设置有形成在基板的第二表面上的外部连接端子，并且封装存储芯片，控制器芯片和基板的树脂包括彼此相对的第三表面和第四表面， 并且具有仅在与基板的第二表面相邻的第四表面上直接印刷的预定标记。

公开(公告)号：US09033248B2

公开(公告)日：2015-05-19

申请号：US13553997

申请日：2012-07-20

申请人： Hidetoshi Suzuki ,  Yuichi Hotta ,  Yuji Shimoda ,  Yuuji Ogawa ,  Taku Nishiyama ,  Tadanobu Okubo ,  Junichi Onodera ,  Takeshi Ikuta ,  Naohisa Okumura ,  Katsuyoshi Watanabe ,  Kazuhide Doi

发明人： Hidetoshi Suzuki ,  Yuichi Hotta ,  Yuji Shimoda ,  Yuuji Ogawa ,  Taku Nishiyama ,  Tadanobu Okubo ,  Junichi Onodera ,  Takeshi Ikuta ,  Naohisa Okumura ,  Katsuyoshi Watanabe ,  Kazuhide Doi

IPC分类号： G06K19/06 ,  H01L23/28 ,  G06K19/077 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L25/065 ,  H01L25/18 ,  H01L25/16 ,  H01L23/498

CPC分类号： G06K19/07732 ,  H01L23/3107 ,  H01L23/49838 ,  H01L23/49855 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/165 ,  H01L25/18 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19107 ,  H05K1/0259 ,  H05K1/0269 ,  H05K1/113 ,  H05K1/117 ,  H05K3/284 ,  H05K3/321 ,  H05K2201/09563 ,  H05K2201/0979 ,  H05K2201/09936 ,  H05K2201/10287 ,  H05K2203/1327 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

摘要： According to one embodiment, a semiconductor storage device is provided with a memory chip including a storage circuit, a controller chip that controls a memory chip, and a substrate having a first surface and a second surface opposing one another, on the first surface of which the controller chip is mounted. Further, the semiconductor storage device is provided with an external connection terminal formed on the second surface of the substrate, and resin that encapsulates the memory chip, the controller chip, and the substrate, includes a third surface and a fourth surface opposing one another, and has a predetermined mark directly printed only on the fourth surface that is adjacent to the second surface of the substrate.

摘要翻译： 根据一个实施例，半导体存储装置设置有存储芯片，存储芯片包括存储电路，控制存储芯片的控制器芯片和具有第一表面和第二表面的基板，第一表面和第二表面在其第一表面上 安装控制器芯片。 此外，半导体存储装置设置有形成在基板的第二表面上的外部连接端子，并且封装存储芯片，控制器芯片和基板的树脂包括彼此相对的第三表面和第四表面， 并且具有仅在与基板的第二表面相邻的第四表面上直接印刷的预定标记。

公开(公告)号：US08039364B2

公开(公告)日：2011-10-18

申请号：US12662591

申请日：2010-04-23

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B28D5/022 ,  H01L21/67132 ,  H01L21/6835 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752

摘要： An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

摘要翻译： 厚度超过25μm的粘合剂层和切割带层压在半导体晶片的后表面上。 通过使用切割深度到达粘合剂层的第一刀片将半导体晶片与粘合剂层的一部分一起切割。 通过使用切割深度到达切割带并且宽度比第一刀片窄的第二刀片将粘合剂层与切割带的一部分一起切割。 通过用粘合剂层切割半导体晶片而切割的半导体元件从切割带拾取，并且粘附在另一个半导体元件或电路板上。

公开(公告)号：US20100207252A1

公开(公告)日：2010-08-19

申请号：US12662591

申请日：2010-04-23

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  B28D5/022 ,  H01L21/67132 ,  H01L21/6835 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752

摘要： An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

摘要翻译： 厚度超过25μm的粘合剂层和切割带层压在半导体晶片的后表面上。 通过使用切割深度到达粘合剂层的第一刀片将半导体晶片与粘合剂层的一部分一起切割。 通过使用切割深度到达切割带并且宽度比第一刀片窄的第二刀片将粘合剂层与切割带的一部分一起切割。 通过用粘合剂层切割半导体晶片而切割的半导体元件从切割带拾取，并且粘附在另一个半导体元件或电路板上。

公开(公告)号：US07736999B2

公开(公告)日：2010-06-15

申请号：US11715961

申请日：2007-03-09

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B28D5/022 ,  H01L21/67132 ,  H01L21/6835 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752

摘要： An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

公开(公告)号：US4707238A

公开(公告)日：1987-11-17

申请号：US863682

申请日：1986-05-15

申请人： Tadanobu Okubo

发明人： Tadanobu Okubo

IPC分类号： A44C27/00 ,  A61C5/08 ,  A61C5/10 ,  A61C13/00 ,  C23C14/06 ,  C23C14/16 ,  C23C14/00

CPC分类号： C23C14/0015 ,  A44C27/006 ,  A61C5/10 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/16

摘要： A primary thin hard coating selected from chrome nitride, titanium nitride and titanium carbide, and a secondary thin coating selected from elemental metals and their corresponding alloys capable of dry-plating are provided on a metal material by an ion-plating technique. The secondary thin coating is provided by ion-plating in the absence of an inert gas, such as argon or helium, which is different from conventional methods for ion-plating the elemental metal in the presence of such inert gas.

摘要翻译： 通过离子镀技术在金属材料上提供选自氮化铬，氮化钛和碳化钛的初级薄硬涂层以及选自元素金属及其相应的能够进行干电镀的合金的次级薄膜。 在不存在诸如氩或氦的惰性气体的情况下通过离子镀提供二次薄涂层，其不同于在这种惰性气体存在下对元素金属进行离子镀的常规方法。

公开(公告)号：US20120169717A1

公开(公告)日：2012-07-05

申请号：US13081911

申请日：2011-04-07

申请人： Takao NAKANO ,  Kazuki Yoshihara ,  Yoshiaki Onishi ,  Ichirou Mihara ,  Tadanobu Okubo

发明人： Takao NAKANO ,  Kazuki Yoshihara ,  Yoshiaki Onishi ,  Ichirou Mihara ,  Tadanobu Okubo

IPC分类号： G06T15/00

CPC分类号： A63F13/525 ,  A63F13/26 ,  A63F13/92 ,  A63F2300/301 ,  H04N13/128 ,  H04N13/275 ,  H04N13/305 ,  H04N13/31 ,  H04N13/359

摘要： If a stereoscopic display mode is selected, the angle of view of each of a pair of perspective-projection virtual cameras and a distance between the perspective-projection virtual cameras are determined based on an output signal from a 3D adjustment switch. Based on these perspective-projection virtual cameras, an image for right eye and an image for left eye are rendered, and a stereoscopically visible image is generated based on these images. If a planar display mode is selected, a single orthogonal-projection virtual camera is used to generate a planarly visible image.

摘要翻译： 如果选择立体显示模式，则基于来自3D调节开关的输出信号确定一对透视投影虚拟相机中的每一个的视角和透视投影虚拟相机之间的距离。 基于这些透视投影虚拟相机，渲染用于右眼的图像和用于左眼的图像，并且基于这些图像生成立体视觉图像。 如果选择平面显示模式，则使用单个正交投影虚拟相机来生成平面可见图像。

公开(公告)号：US20070218586A1

公开(公告)日：2007-09-20

申请号：US11715961

申请日：2007-03-09

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Shigetaka Onishi

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B28D5/022 ,  H01L21/67132 ,  H01L21/6835 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752

摘要： An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

摘要翻译： 厚度超过25μm的粘合剂层和切割带层压在半导体晶片的后表面上。 通过使用切割深度到达粘合剂层的第一刀片将半导体晶片与粘合剂层的一部分一起切割。 通过使用切割深度到达切割带并且宽度比第一刀片窄的第二刀片将粘合剂层与切割带的一部分一起切割。 通过用粘合剂层切割半导体晶片而切割的半导体元件从切割带拾取，并且粘附在另一个半导体元件或电路板上。

公开(公告)号：US20070196952A1

公开(公告)日：2007-08-23

申请号：US11651561

申请日：2007-01-10

申请人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Yasuo Tane

发明人： Atsushi Yoshimura ,  Tadanobu Okubo ,  Yasuo Tane

IPC分类号： H01L21/00

CPC分类号： H01L21/6838 ,  H01L23/3128 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate having an element mounting portion is placed on a suction stage having a suction hole. The suction hole is provided so as to suck a region excluding the element mounting portion of the substrate. Otherwise, the suction hole has a hole size of not less than 0.5 mm nor more than 1.0 mm. A fist semiconduct or substrate is sucked with a suction rubber collet with Shore A hardness of not less than 50 nor more than 70. The first semiconductor element is bonded to the element mounting portion of the substrate. A second semiconductor element having an adhesive layer with a remaining volatile content of 0.5% or less is disposed on the first semiconductor substrate. The adhesive layer is heated to a temperature in a range of not less than 120° C. nor more than 150° C. and bonded.

摘要翻译： 具有元件安装部的基板被放置在具有吸入孔的抽吸台上。 吸引孔设置成吸引除基板的元件安装部以外的区域。 否则，吸孔的孔径不小于0.5mm，不大于1.0mm。 第一半导体或基板被吸入具有不低于50且不大于70的肖氏A硬度的吸力橡胶夹头。第一半导体元件结合到基板的元件安装部分。 具有0.5％以下剩余挥发物含量的粘合剂层的第二半导体元件设置在第一半导体衬底上。 将粘合剂层加热至不低于120℃并且不超过150℃的温度。