FOCUS CONTROL METHOD AND OPTICAL DISC DRIVE
    1.
    发明申请
    FOCUS CONTROL METHOD AND OPTICAL DISC DRIVE 审中-公开
    聚焦控制方法和光盘驱动

    公开(公告)号:US20080080348A1

    公开(公告)日:2008-04-03

    申请号:US11837125

    申请日:2007-08-10

    IPC分类号: G11B20/18 G11B19/04 G11B7/00

    摘要: By a controller, land and groove areas of an optical disc are tracked, two focus error signals are detected in PID portions in the respective land and groove areas, a difference of focus offset is calculated on the basis of the detection, and the two focus error signals are corrected so as to set the difference to zero.

    摘要翻译: 通过控制器跟踪光盘的平面和凹槽区域,在相应的凹槽和凹槽区域中的PID部分中检测到两个聚焦误差信号,基于检测计算聚焦偏移的差异,并且两个焦点 校正误差信号,以将差值设定为零。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号:US20140061761A1

    公开(公告)日:2014-03-06

    申请号:US13692156

    申请日:2012-12-03

    申请人: Hiroshi KUBOTA

    发明人: Hiroshi KUBOTA

    IPC分类号: H01L29/792 H01L29/66

    摘要: According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of electrode structures above a substrate. The method includes forming an insulating film on the plurality of electrode structures to make a gap between mutually-adjacent electrode structures. The method includes forming a silicon nitride film having compressive stress above the insulating film. The method includes forming a planarization film above the silicon nitride film. The method includes planarizing a surface of the planarization film by polishing by CMP (chemical mechanical polishing) method.

    摘要翻译: 根据一个实施例,一种用于制造半导体器件的方法包括在衬底上形成多个电极结构。 该方法包括在多个电极结构上形成绝缘膜以在相互相邻的电极结构之间形成间隙。 该方法包括在绝缘膜上形成具有压应力的氮化硅膜。 该方法包括在氮化硅膜上形成平坦化膜。 该方法包括通过CMP(化学机械抛光)方法的抛光来平坦化平坦化膜的表面。

    SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体制造装置及制造半导体器件的方法

    公开(公告)号:US20100048022A1

    公开(公告)日:2010-02-25

    申请号:US12490681

    申请日:2009-06-24

    申请人: Hiroshi KUBOTA

    发明人: Hiroshi KUBOTA

    IPC分类号: H01L21/465 C23F1/02 C23C16/50

    摘要: A semiconductor manufacturing apparatus that forms a carbon film on a wafer by plasma enhanced chemical vapor deposition includes a body having a top opening; a stage provided within the body for placement of the wafer; a showerhead that encloses the top opening and that introduces a deposition gas or an etch gas; and a gas delivery system including a central gas inlet that introduces gas toward a central portion of the wafer from a central portion of the showerhead, and a peripheral gas inlet that introduces gas toward a bevel of the wafer from an outer peripheral portion of the showerhead, wherein the gas delivery system, after activating the etch gas outside the body, delivers the activated etch gas toward the bevel of the wafer to selectively remove a portion of the carbon film formed on the bevel of the wafer.

    摘要翻译: 通过等离子体增强化学气相沉积在晶片上形成碳膜的半导体制造装置包括具有顶部开口的主体; 设置在所述体内的用于放置晶片的台阶; 包围顶部开口并引入沉积气体或蚀刻气体的喷头; 以及包括中央气体入口的气体输送系统,所述中心气体入口从所述喷头的中心部向所述晶片的中心部分引入气体;以及周边气体入口,其从所述喷头的外周部向所述晶片的斜​​面引入气体 其中所述气体输送系统在激活所述体外的所述蚀刻气体之后将所述激活的蚀刻气体朝向所述晶片的斜​​面传送,以选择性地去除在所述晶片的斜​​面上形成的所述碳膜的一部分。

    METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
    制造非易失性半导体存储器件的方法

    公开(公告)号:US20090081847A1

    公开(公告)日:2009-03-26

    申请号:US12234098

    申请日:2008-09-19

    申请人: Hiroshi KUBOTA

    发明人: Hiroshi KUBOTA

    IPC分类号: H01L21/76

    CPC分类号: H01L21/76232 H01L27/11521

    摘要: A method of manufacturing a nonvolatile semiconductor memory device comprising: forming a trench in a silicon substrate; forming a silicon dioxide film along an internal surface of the trench of the silicon substrate; removing the silicon dioxide film formed on a bottom surface of the trench of the silicon substrate by an anisotropic etching process; and forming an ozone tetraethyl orthosilicate (O3-TEOS) film on an inner side of the silicon dioxide film by selectively depositing the O3-TEOS film on the bottom surface of the trench of the silicon substrate by a thermal CVD method.

    摘要翻译: 一种制造非易失性半导体存储器件的方法,包括:在硅衬底中形成沟槽; 沿着硅衬底的沟槽的内表面形成二氧化硅膜; 通过各向异性蚀刻工艺除去在硅衬底的沟槽的底表面上形成的二氧化硅膜; 并通过热CVD法在硅衬底的沟槽的底表面上选择性地沉积O 3 -TEOS膜,在二氧化硅膜的内侧上形成臭氧四乙基原硅酸盐(O3-TEOS)膜。

    TONER CARTRIDGE, IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD
    10.
    发明申请
    TONER CARTRIDGE, IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD 有权
    墨粉盒,图像形成装置和图像形成方法

    公开(公告)号:US20110081170A1

    公开(公告)日:2011-04-07

    申请号:US12898042

    申请日:2010-10-05

    IPC分类号: G03G15/08

    摘要: A toner cartridge includes a container body and a screw conveyer section. The screw conveyer section includes a rotation shaft and a toner conveying blade. The toner rotation shaft includes a first rotation shaft portion and a second rotation shaft portion concentrically communicated to the first rotation shaft portion and having a diameter smaller than that of the first rotation shaft portion. The toner conveying blade includes a first blade portion formed on the first rotation shaft portion, and a second blade portion formed on the second rotation shaft portion, a period of a spiral of the second blade portion winding around the second rotation shaft portion being smaller than a period of a spiral of the first blade portion winding around the first rotation shaft portion.

    摘要翻译: 墨粉盒包括容器主体和螺旋输送部分。 螺旋输送机部分包括旋转轴和调色剂输送叶片。 调色剂旋转轴包括与第一旋转轴部分同心地连通且直径小于第一旋转轴部分的直径的第一旋转轴部分和第二旋转轴部分。 调色剂输送叶片包括形成在第一旋转轴部分上的第一叶片部分和形成在第二旋转轴部分上的第二叶片部分,围绕第二旋转轴部分缠绕的第二叶片部分的螺旋周期小于 围绕第一旋转轴部分缠绕的第一叶片部分的螺旋周期。