公开(公告)号：US09451131B2

公开(公告)日：2016-09-20

申请号：US12722069

申请日：2010-03-11

申请人： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

发明人： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC分类号： H01L21/00 ,  H01L31/062 ,  H01L31/113 ,  H04N5/225 ,  H01L27/146 ,  H04N5/374

CPC分类号： H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374

摘要： A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

摘要翻译： 提供了一种半导体器件作为背照式固态成像器件。 该器件通过将具有半成品状态的像素阵列的第一半导体晶片和具有半成品状态的逻辑电路的第二半导体晶片结合在一起而制造，使得第一半导体晶片成为薄膜，电 连接像素阵列和逻辑电路，使得像素阵列和逻辑电路成为成品状态，并将第一半导体晶片和第二半导体结合在一起成为微芯片。

公开(公告)号：US20120056288A1

公开(公告)日：2012-03-08

申请号：US13216654

申请日：2011-08-24

申请人： Ikuo Yoshihara ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Hironobu Yoshida

发明人： Ikuo Yoshihara ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Hironobu Yoshida

IPC分类号： H01L31/04 ,  H01L21/66 ,  H01L23/538

CPC分类号： H01L25/00 ,  H01L21/76251 ,  H01L23/147 ,  H01L23/49805 ,  H01L23/49822 ,  H01L25/0657 ,  H01L25/167 ,  H01L25/50 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

摘要翻译： 半导体器件包括：第一半导体芯片; 以及堆叠在第一半导体芯片上的第二半导体芯片。 第一半导体芯片包括第一布线部分，其侧表面在第一半导体芯片的侧部暴露。 第二半导体芯片包括第二布线部分，其侧表面在第二半导体芯片的侧部暴露。 在第一半导体芯片和第二半导体芯片的侧面露出的第一布线部分和第二布线部分的各个侧表面被导电层覆盖，并且第一布线部分和第二布线部分 通过导电层彼此电连接。

公开(公告)号：US20110102657A1

公开(公告)日：2011-05-05

申请号：US12910014

申请日：2010-10-22

申请人： Hiroshi Takahashi ,  Taku Umebayashi

发明人： Hiroshi Takahashi ,  Taku Umebayashi

IPC分类号： H04N5/335 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/18 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2224/45099

摘要： A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

摘要翻译： 一种半导体器件，具有在其一侧包括第一布线层的第一半导体部分; 其一侧包括第二布线层的第二半导体部分，所述第一和第二半导体部分与所述第一和第二半导体部分的相应的第一和第二布线层侧面相互固定在一起; 导电材料，其延伸穿过所述第一半导体部分到所述第二半导体部分的所述第二布线层，并且所述第一和第二布线层与所述第二半导体部分电连通; 以及除了通过第一半导体部分延伸到第二布线层的导电材料的开口以外的开口。

公开(公告)号：US08536670B2

公开(公告)日：2013-09-17

申请号：US13216654

申请日：2011-08-24

申请人： Ikuo Yoshihara ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Hironobu Yoshida

发明人： Ikuo Yoshihara ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Hironobu Yoshida

IPC分类号： H01L31/04 ,  H01L21/66 ,  H01L23/538

CPC分类号： H01L25/00 ,  H01L21/76251 ,  H01L23/147 ,  H01L23/49805 ,  H01L23/49822 ,  H01L25/0657 ,  H01L25/167 ,  H01L25/50 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

公开(公告)号：US08410569B2

公开(公告)日：2013-04-02

申请号：US12842583

申请日：2010-07-23

申请人： Ikuo Yoshihara ,  Masaya Nagata ,  Naoto Sasaki ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Yoichi Otsuka ,  Isaya Kitamura ,  Tokihisa Kaneguchi ,  Keishi Inoue ,  Toshihiko Hayashi ,  Hiroyasu Matsugai ,  Mayoshi Aonuma ,  Hiroshi Yoshioka

发明人： Ikuo Yoshihara ,  Masaya Nagata ,  Naoto Sasaki ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Yoichi Otsuka ,  Isaya Kitamura ,  Tokihisa Kaneguchi ,  Keishi Inoue ,  Toshihiko Hayashi ,  Hiroyasu Matsugai ,  Mayoshi Aonuma ,  Hiroshi Yoshioka

IPC分类号： H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14687

摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

摘要翻译： 固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

公开(公告)号：US20110024858A1

公开(公告)日：2011-02-03

申请号：US12842583

申请日：2010-07-23

申请人： Ikuo Yoshihara ,  Masaya Nagata ,  Naoto Sasaki ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Yoichi Otsuka ,  Isaya Kitamura ,  Tokihisa Kaneguchi ,  Keishi Inoue ,  Toshihiko Hayashi ,  Hiroyasu Matsugai ,  Masayoshi Aonuma ,  Hiroshi Yoshioka

发明人： Ikuo Yoshihara ,  Masaya Nagata ,  Naoto Sasaki ,  Taku Umebayashi ,  Hiroshi Takahashi ,  Yoichi Otsuka ,  Isaya Kitamura ,  Tokihisa Kaneguchi ,  Keishi Inoue ,  Toshihiko Hayashi ,  Hiroyasu Matsugai ,  Masayoshi Aonuma ,  Hiroshi Yoshioka

IPC分类号： H01L31/0232 ,  H01L31/02 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14687

摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

摘要翻译： 固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

公开(公告)号：US08848075B2

公开(公告)日：2014-09-30

申请号：US12910014

申请日：2010-10-22

申请人： Hiroshi Takahashi ,  Taku Umebayashi

发明人： Hiroshi Takahashi ,  Taku Umebayashi

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L23/00 ,  H01L27/146 ,  H01L23/48 ,  H01L21/768 ,  H01L21/762

CPC分类号： H01L27/14636 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/18 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2224/45099

摘要： A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

摘要翻译： 一种半导体器件，具有在其一侧包括第一布线层的第一半导体部分; 其一侧包括第二布线层的第二半导体部分，所述第一和第二半导体部分与所述第一和第二半导体部分的相应的第一和第二布线层侧面相互固定在一起; 导电材料，其延伸穿过所述第一半导体部分到所述第二半导体部分的所述第二布线层，并且所述第一和第二布线层与所述第二半导体部分电连通; 以及除了通过第一半导体部分延伸到第二布线层的导电材料的开口以外的开口。

公开(公告)号：US20100238331A1

公开(公告)日：2010-09-23

申请号：US12722069

申请日：2010-03-11

申请人： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

发明人： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC分类号： H04N5/335 ,  H01L31/14 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374

摘要： A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

摘要翻译： 提供了一种半导体器件作为背照式固态成像器件。 该器件通过将具有半成品状态的像素阵列的第一半导体晶片和具有半成品状态的逻辑电路的第二半导体晶片结合在一起而制造，使得第一半导体晶片成为薄膜，电 连接像素阵列和逻辑电路，使得像素阵列和逻辑电路成为成品状态，并将第一半导体晶片和第二半导体结合在一起成为微芯片。

公开(公告)号：US07087956B2

公开(公告)日：2006-08-08

申请号：US10203776

申请日：2001-12-13

申请人： Taku Umebayashi

发明人： Taku Umebayashi

IPC分类号： H01L29/94

CPC分类号： H01L27/10876 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10891 ,  H01L27/10894

摘要： In a semiconductor device having a memory element and a logic element formed on the same semiconductor substrate, a transistor of the memory element comprises a gate electrode (16) embedded within a trench (13) formed in a semiconductor substrate (11) through a gate insulating film (15) and a diffusion layer (17) formed on the side of the semiconductor substrate (11) at a sidewall of the trench (13), and a take-out electrode (20) connected to the diffusion layer (17) is provided so that the take-out electrode overlaps the gate electrode (16) through a first interlayer insulating film (insulating film) (18) on the gate electrode (16). A word line (16) is provided in the trench (13) and an impurity concentration of the diffusion layer (17) is decreased as a depth thereof is increased.

摘要翻译： 在具有形成在同一半导体衬底上的存储元件和逻辑元件的半导体器件中，存储元件的晶体管包括嵌入在通过栅极形成在半导体衬底（11）中的沟槽（13）内的栅电极（16） 在所述沟槽（13）的侧壁形成在所述半导体衬底（11）侧的绝缘膜（15）和扩散层（17），以及连接到所述扩散层（17）的取出电极（20） 被提供为使得取出电极通过栅电极（16）上的第一层间绝缘膜（绝缘膜）（18）与栅电极（16）重叠。 在沟槽（13）中设置字线（16），随着​​其深度增加，扩散层（17）的杂质浓度降低。

公开(公告)号：US07297577B2

公开(公告)日：2007-11-20

申请号：US11027853

申请日：2004-12-30

申请人： Taku Umebayashi

发明人： Taku Umebayashi

IPC分类号： H01L21/84

CPC分类号： H01L21/84 ,  H01L27/11 ,  H01L27/1203 ,  H01L29/785

摘要： An SOI device, and a method for producing the SOI device, for use in an SRAM memory having enhanced stability. The SRAM is formed with a wider W and a fully-depleted FET. The wider FET is extended by an expitaxial silicon sidewall, and the performance of the FET is improved.

摘要翻译： 一种SOI器件，以及用于制造SOI器件的方法，用于具有增强的稳定性的SRAM存储器中。 SRAM形成有较宽的W和完全耗尽的FET。 更宽的FET通过外延硅侧壁延伸，并且FET的性能得到改善。