公开(公告)号：US06890834B2

公开(公告)日：2005-05-10

申请号：US10163691

申请日：2002-06-06

申请人： Hiroyoshi Komobuchi ,  Minoru Kubo ,  Masahiko Hashimoto ,  Michio Okajima ,  Shinichi Yamamoto

发明人： Hiroyoshi Komobuchi ,  Minoru Kubo ,  Masahiko Hashimoto ,  Michio Okajima ,  Shinichi Yamamoto

IPC分类号： H01L25/00 ,  B81B7/00 ,  G01J5/10 ,  H01L23/10 ,  H01L27/146 ,  H01L31/0203 ,  H01L21/30

CPC分类号： B81B7/0077 ,  G01J5/10 ,  H01L23/10 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14649 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/16235 ,  H01L2924/00

摘要： An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

摘要翻译： 在盖晶片上形成Al膜，将Al膜图案化成环状膜。 通过使用环形膜作为掩模进行干蚀刻以形成包围凹部的鼓部，以提供真空圆顶。 在盖片的基板部分形成切割深度之后，将盖片放置在其上形成有红外区域传感器的主体晶片上。 然后，将盖片的环状膜和主体晶片的环状膜通过压力接合而形成环状的接合部。

公开(公告)号：US06965107B2

公开(公告)日：2005-11-15

申请号：US10793477

申请日：2004-03-04

申请人： Hiroyoshi Komobuchi ,  Minoru Kubo ,  Masahiko Hashimoto ,  Michio Okajima ,  Shinichi Yamamoto

发明人： Hiroyoshi Komobuchi ,  Minoru Kubo ,  Masahiko Hashimoto ,  Michio Okajima ,  Shinichi Yamamoto

IPC分类号： H01L25/00 ,  B81B7/00 ,  G01J5/10 ,  H01L23/10 ,  H01L27/146 ,  H01L31/0203 ,  G01J5/00 ,  G01J5/02 ,  H01L21/30 ,  H01L21/46

CPC分类号： B81B7/0077 ,  G01J5/10 ,  H01L23/10 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14649 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/16235 ,  H01L2924/00

摘要： An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

摘要翻译： 在盖晶片上形成Al膜，将Al膜图案化成环状膜。 通过使用环形膜作为掩模进行干蚀刻以形成包围凹部的鼓部，以提供真空圆顶。 在盖片的基板部分形成切割深度之后，将盖片放置在其上形成有红外区域传感器的主体晶片上。 然后，将盖片的环状膜和主体晶片的环状膜通过压力接合而形成环状的接合部。

公开(公告)号：US07105449B1

公开(公告)日：2006-09-12

申请号：US10111599

申请日：2000-10-27

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/8249

摘要： A thermal cleaning of a substrate that has been subjected to wet cleaning is carried out under a high vacuum atmosphere to remove an oxide film remaining on the substrate. Thereafter, a thermal cleaning is carried out under a hydrogen atmosphere to remove contamination such as carbon or the like. At this time, the oxide film has already been removed and therefore contamination is effectively removed by a relatively low temperature and short duration thermal cleaning. Thus, problems such as the degradation of the profile of the impurity concentration in the impurity diffusion layer which has been formed over the substrate are prevented.

摘要翻译： 进行了湿式清洗的基板的热清洗是在高真空气氛下进行的，以除去留在基板上的氧化膜。 此后，在氢气氛下进行热清洗以除去诸如碳等的污染物。 此时，氧化膜已经被去除，因此通过相对低的温度和短时间的热清洁有效地去除污染。 因此，防止了在衬底上形成的杂质扩散层中的杂质浓度分布的劣化的问题。

公开(公告)号：US06537369B1

公开(公告)日：2003-03-25

申请号：US09979881

申请日：2001-11-27

申请人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

发明人： Tohru Saitoh ,  Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Minoru Kubo

IPC分类号： C30B2302

CPC分类号： H01L29/161 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T428/12674 ,  Y10T428/265

摘要： A B-doped Si1−x−yGexCy layer 102 (where 0

摘要翻译： 使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0

公开(公告)号：US06399970B2

公开(公告)日：2002-06-04

申请号：US08931562

申请日：1997-09-16

申请人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

发明人： Minoru Kubo ,  Katsuya Nozawa ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Yasuhito Kumabuchi

IPC分类号： H01L29778

CPC分类号： H01L29/66431 ,  H01L21/8238 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029 ,  H01L29/161 ,  H01L29/7782

摘要： Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.

摘要翻译： Si和SiGeC层形成在Si衬底上的NMOS晶体管中。 使用存在于SiGeC和Si层之间的异质界面处的导带的不连续部分来形成载流子积累层。 电子在作为通道的载流子累积层中行进。 在SiGeC层中，电子迁移率大于硅中的电子迁移率，从而增加NMOS晶体管的工作速度。 在PMOS晶体管中，通过在SiGe和Si层之间的界面处使用价带的不连续部分来形成空穴行进的沟道。 SiGe层中的空穴迁移率也大于Si层，因此增加PMOS晶体管的工作速度。 可以提供具有场效应晶体管的半导体器件，其具有在晶体缺陷中减少的沟道。

公开(公告)号：US06277657B1

公开(公告)日：2001-08-21

申请号：US09530926

申请日：2000-05-08

申请人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

发明人： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

IPC分类号： H01L2100

CPC分类号： C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

摘要： A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

摘要翻译： 晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计， 以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。 用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。 在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

公开(公告)号：US4885260A

公开(公告)日：1989-12-05

申请号：US156525

申请日：1988-02-16

申请人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

发明人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S117/904 ,  Y10S148/048 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/094 ,  Y10S438/925 ,  Y10S438/936

摘要： Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

摘要翻译： 公开了一种化合物半导体的气相生长方法，其中源气体以固定的进料速率被引入外延生长反应器中，基板表面被光照射，并且光照射被打开和关闭，或者光照射强度 增加或减少，使得外延层结构改变组成，并且载流子浓度和导电类型在生长膜中在厚度方向上突然或连续地变化。

公开(公告)号：US06930026B2

公开(公告)日：2005-08-16

申请号：US10414106

申请日：2003-04-16

申请人： Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Tohru Saitoh ,  Minoru Kubo

发明人： Yoshihiko Kanzawa ,  Katsuya Nozawa ,  Tohru Saitoh ,  Minoru Kubo

IPC分类号： H01L21/205 ,  C30B33/00 ,  H01L21/20 ,  H01L29/10 ,  H01L29/165 ,  H01L29/24 ,  H01L20/30 ,  H01L21/36 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01L29/1608 ,  C30B29/06 ,  C30B29/52 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02667 ,  H01L29/1054 ,  H01L29/165

摘要： A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and SiC microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.

摘要翻译： 对其上沉积有SiGeC晶体层8的Si衬底1进行退火，以在Si衬底1上形成退火的SiGeC晶体层10。 退火的SiGeC晶体层包括晶格释放并且几乎不具有位错的矩阵SiGeC晶体层7和分散在基体SiGeC晶体层7中的SiC微晶6。 然后在退火的SiGeC晶体层10上沉积Si晶体层，以形成几乎不具有位错的应变Si晶体层4。

公开(公告)号：US20050093020A1

公开(公告)日：2005-05-05

申请号：US10983610

申请日：2004-11-09

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/092 ,  H01L27/115 ,  H01L27/12 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L31/0392

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US20050025002A1

公开(公告)日：2005-02-03

申请号：US10849158

申请日：2004-05-20

申请人： Masahiro Saito ,  Norio Fukasawa ,  Kiyoshi Toyota ,  Junichi Suzuki ,  Minoru Kubo ,  Souichi Murakami

发明人： Masahiro Saito ,  Norio Fukasawa ,  Kiyoshi Toyota ,  Junichi Suzuki ,  Minoru Kubo ,  Souichi Murakami

IPC分类号： G11B7/09 ,  G11B7/125 ,  G11B7/13 ,  G11B7/135 ,  G11B7/22 ,  G11B7/00

CPC分类号： G11B7/1275 ,  G11B7/131 ,  G11B7/1353 ,  G11B7/1359 ,  G11B7/1395 ,  G11B7/22

摘要： Disclosed is an optical head in which position adjustment of a photodetector light receiving surface or component parts may be simplified, production costs may be reduced and operational reliability may be improved. The optical head includes a light source 22, radiating light of a preset wavelength, an objective lens 27 for condensing the outgoing light from the light source 22 on an optical disc 2 and for condensing the return light from the optical disc 2, a beam splitter 25 for branching the optical path of the return light reflected by the optical disc 2, and for collimating the branched return light so as to be parallel to the outgoing light from the light source 22, a composite optical component including a splitting prism 30 arranged on a site of incidence of the branched return light for spatially splitting the return light, and a light receiving unit for receiving plural return light beams spatially split by the splitting prism 30 for producing focusing error signals.

摘要翻译： 公开了一种可以简化光电检测器光接收表面或部件的位置调整的光学头，可以降低生产成本并且可以提高操作可靠性。 光头包括一个照射预定波长的光源22，用于将来自光源22的输出光聚焦在光盘2上并用于聚光来自光盘2的返回光的物镜27，一个分束器 25，用于分支由光盘2反射的返回光的光路，并且用于使分支的返回光准直以与来自光源22的出射光平行;复合光学部件，包括分离棱镜30，其布置在 用于空间分离返回光的分支返回光的入射部位，以及用于接收由分割棱镜30空间分裂的多个返回光束的光接收单元，用于产生聚焦误差信号。