摘要:
A field emission electron microscope in which a controller is provided to make an electron beam current fixed due to variations in an accelerating voltage or an extracting voltage to thereby make fixed the brightness of an electron beam with which a specimen is illuminated.
摘要:
Disclosed is an electron beam metrology system for measuring the width of a pattern on a specimen by scanning the specimen with a deflected electron beam, detecting a pattern image signal provided by secondary electrons emitted from the specimen, and measuring the pattern width on the specimen on the basis of the pattern detection signal. The system comprises a signal detecting device including at least one set of two detectors disposed toward the scanning direction of the electron beam in a relation symmetrical with respect to the optical axis of the electron beam for detecting pattern image signals independently of each other, a device for recognizing surface topography of the pattern using an output signal of the signal detecting device, and a device for measuring the pattern width while discriminating as to whether the pattern is a raised-profile pattern or a hollow-profile pattern.
摘要:
An electron beam metrology system for measuring the width of a pattern on a surface of a sample in such a manner that the surface of the sample is scanned with an electron beam, secondary electrons emitted from the surface are detected to obtain a detection signal, and the width of the pattern is measured by using the detection signal, is disclosed in which a pair of detectors are disposed symmetrically with respect to the optical axis of the electron beam in a scanning direction thereof, a ratio of one of the output signals of the detectors to the other output signal and a ratio of the other output signal to the one output signal are formed, and a sum signal indicative of the sum of two ratios is produced, to be used for measuring the width of the pattern correctly and accurately, without being affected by a change in pattern material.
摘要:
A small-dimension measurement system by scanning electron beam comprises an electron optical column including an electron source for emitting an electron beam to scan a sample, at least one pair of detectors disposed symmetrically with respect to an optical axis of the electron optical column for detecting position information from the sample by scanning of the electron beam, and a signal selecting circuit for subjecting the outputs of the paired detectors to a predetermined signal selection. The signal selecting circuit selectively and alternately provides maximum or peak portions of the outputs of the paired detectors which portions correspond to opposite edge portions of the sample. The output of the signal selecting circuit is applied to a signal processing circuit for conversion into a dimension of a predetermined pattern on the sample.
摘要:
An object of the present invention is to realize a field-emission transmission electron microscope which is able to cope with both observation of an electron-microscopic image of a high brightness and microanalysis. A low aberration condenser lens 4 is disposed at the farthest position from a specimen 7, and a short focal length lens 5 is disposed at the midpoint between the specimen 7 and the condenser lens 4. In the case of an observation of an electron-microscopic image, the condenser lens unit is operated for enlargement in which the condenser lens 4 and the condenser lens 5 are driven in an interlocking motion. When the size of a beam spot on a specimen is to be reduced, a condenser lens 6 disposed close to the specimen between the condenser lens 5 and the specimen 7 is driven to make the condenser lens unit be operated for reduction. The coexistence of a small illuminating angle and the illumination of a specimen with a fine beam spot is realized, which makes it possible for a field-emission transmission electron microscope to have both functions, being able to observe a bright electron microscopic image and to perform an element analysis.
摘要:
Disclosed is an apparatus for focusing a charged particle beam onto a speciman, which comprises a scanner for scanning a pre-formed standard pattern with a charged particle beam, a converging unit capable of converging the charged particle beam onto a specimen, a detector for detecting secondary charged particles emitted as a result of scanning the standard pattern by the scanner, a circuit for deriving a standard frequency component determined by the period of scanning with the charged particle beam and the shape of the portion of the standard pattern in the region being scanned with the charged particle beam, and a circuit cooperating with the converging unit for finding the maximum value of the amplitude of the standard frequency component thereby identifying attainment of focusing of the charged particle beam with high accuracy.
摘要:
In a beam irradiation device of the present invention, laser beams emitted from a semiconductor laser impinge on an irradiation lens supported by a lens actuator. The laser beams that have passed through the irradiation lens change in outgoing angle in the direction of a y-z plane as the lens actuator is driven. A laser beam scan in the target region is thus performed. A part of the laser beams that have passed through the irradiation lens is reflected and separated by a beam splitter. The separated beams are converged on a PSD through a converging lens. A DSP control circuit monitors a scan position of the laser beams that have passed through the irradiation lens based on a signal from the PSD. When an irradiation position has deviated from a scan trajectory, the DSP control circuit controls an actuator driving circuit to draw the irradiation position back onto the scan trajectory. This beam irradiation device can realize a smooth and stable beam scan operation with a simple construction.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector. This structure enhances the contrast of a desired portion of the specimen under observation for a scanning transmitted image by selective establishment of detection angle ranges for the scattered electron detector.
摘要:
A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.