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    SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED VOLTAGE TRANSMISSION PATH AND DRIVING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED VOLTAGE TRANSMISSION PATH AND DRIVING METHOD THEREOF 有权
    具有改进的电压传输路径的半导体存储器件及其驱动方法

    公开(公告)号：US20100102434A1

    公开(公告)日：2010-04-29

    申请号：US12652875

    申请日：2010-01-06

    申请人： Sun-Won Kang ,  Seung-Duk Baek

    发明人： Sun-Won Kang ,  Seung-Duk Baek

    IPC分类号： H01L25/16 ,  H01L23/498

    CPC分类号： G11C5/063 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

    摘要翻译： 提供一种半导体存储器件和驱动器件的方法，该器件可以改善提供给器件的存储单元的电压信号的噪声特性。 半导体存储器件包括第一半导体芯片和堆叠在第一芯片上的一个或多个第二半导体芯片。 第一芯片包括用于向/从外部系统发送/接收电压信号，数据信号和控制信号的输入/输出电路。 一个或多个第二半导体芯片各自包括用于存储数据的存储单元区域。 第二半导体芯片通过形成在第一芯片的输入/输出电路外部的一个或多个信号路径接收至少一个信号。

    Stack package
    10.
    发明申请
    Stack package 有权
    堆栈包

    公开(公告)号：US20100090326A1

    公开(公告)日：2010-04-15

    申请号：US12588382

    申请日：2009-10-14

    申请人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    发明人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    IPC分类号： H01L25/065

    CPC分类号： H01L25/0657 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stack package may include a substrate having first and second faces opposite each other and an opening formed therein. The first semiconductor chip may be mounted on the first face of the substrate and include a through electrode in the middle region of the first semiconductor chip that is exposed through the opening. The second semiconductor chip may be stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by the through electrode of the first semiconductor chip. The circuit pattern may be formed on the second face of the substrate and include a bonding pad arranged adjacent to the opening and electrically connected to the through electrode of the first semiconductor chip through the opening, an outer connection pad spaced apart from the bonding pad and a connection wiring extending from the opening to the outer connection pad via the bonding pad.

    摘要翻译： 堆叠包装可以包括具有彼此相对的第一和第二面以及其中形成的开口的衬底。 第一半导体芯片可以安装在基板的第一面上，并且在通过开口暴露的第一半导体芯片的中间区域中包括通孔。 第二半导体芯片可以堆叠在第一半导体芯片上并且通过第一半导体芯片的通孔电连接到第一半导体芯片。 电路图案可以形成在基板的第二面上，并且包括邻近开口布置的焊盘，并且通过开口电连接到第一半导体芯片的通孔，与焊盘间隔开的外连接焊盘和 连接配线，从连接焊盘的开口延伸到外部连接焊盘。