公开(公告)号：US07598607B2

公开(公告)日：2009-10-06

申请号：US12123367

申请日：2008-05-19

申请人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

发明人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

IPC分类号： H01L23/02

CPC分类号： H01L23/3128 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00

摘要： Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

摘要翻译： 提供了具有增强的接头可靠性的半导体封装以及其制造方法。 该方法包括：形成包括插入在底层和顶层之间的半导体芯片的封装单元; 并且将所述封装单元依次堆叠在基板上。 底层和顶层由具有比半导体芯片低的模量的材料形成。 所述半导体封装包括：设置在基板上的至少一个封装单元，所述封装单元包括具有衬垫，底层和基本上围绕所述半导体芯片的顶层的半导体芯片以及覆盖所述顶层的再分布结构。 再分配结构电连接到焊盘。

公开(公告)号：US07205660B2

公开(公告)日：2007-04-17

申请号：US11186763

申请日：2005-07-22

申请人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

发明人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

IPC分类号： H01L23/48

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02165 ,  H01L2224/02335 ,  H01L2224/02351 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05569 ,  H01L2224/10125 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13018 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599

摘要： A wafer level chip scale package may have a gap provided between a solder bump and a bump land. The gap may be filled with a gas. A method of manufacturing a wafer level chip scale package may involve forming a redistribution line having a first opening, forming a seed metal layer having a second opening including an undercut portion, and forming the gap using the first and the second openings.

公开(公告)号：US08735276B2

公开(公告)日：2014-05-27

申请号：US13365378

申请日：2012-02-03

申请人： Hyun-Soo Chung ,  Jae-Shin Cho ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang ,  Seung-Duk Baek

发明人： Hyun-Soo Chung ,  Jae-Shin Cho ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang ,  Seung-Duk Baek

IPC分类号： H01L21/768

CPC分类号： H01L24/91 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an external terminal connection pad which is disposed at an opening and electrically connected to the redistributed line. The present general inventive concept can solve the problem where an ingredient of gold included in a redistributed line may be prevented from being diffused into an adjacent bump pad to form a void or an undesired intermetallic compound. In a chip on chip structure, a plurality of bumps of a lower chip are connected to an upper chip to improve reliability, diversity and functionality of the chip on chip structure.

摘要翻译： 提供半导体封装和制造半导体封装的方法。 半导体封装可以包括衬底，其包括芯片焊盘，电连接到芯片焊盘并且包括开口的再分布线。 半导体封装还可以包括外部端子连接部分和设置在开口处并电连接到重新分配线路的外部端子连接焊盘。 本发明的总体构思可以解决包含在再分布线中的金的成分被阻止扩散到相邻的凸块焊盘中以形成空隙或不期望的金属间化合物的问题。 在片上芯片结构中，下部芯片的多个凸起连接到上部芯片以提高片上芯片结构的可靠性，分集性和功能性。

公开(公告)号：US20100032807A1

公开(公告)日：2010-02-11

申请号：US12588231

申请日：2009-10-08

申请人： Hyun-Soo Chung ,  Seung-Duk Baek ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang

发明人： Hyun-Soo Chung ,  Seung-Duk Baek ,  Dong-Ho Lee ,  Dong-Hyeon Jang ,  Seong-Deok Hwang

IPC分类号： H01L23/544

CPC分类号： H01L23/3114 ,  H01L24/10 ,  H01L24/13 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A wafer level semiconductor module may include a module board and an IC chip set mounted on the module board. The IC chip set may include a plurality of IC chips having scribe lines areas between the adjacent IC chips. Each IC chip may have a semiconductor substrate having an active surface with a plurality of chip pads and a back surface. A passivation layer may be provided on the active surface of the semiconductor substrate of each IC chip and may having openings through which the chip pads may be exposed. Sealing portions may be formed in scribe line areas.

摘要翻译： 晶片级半导体模块可以包括安装在模块板上的模块板和IC芯片组。 IC芯片组可以包括在相邻IC芯片之间具有划线区域的多个IC芯片。 每个IC芯片可以具有具有多个芯片焊盘和后表面的有源表面的半导体衬底。 可以在每个IC芯片的半导体衬底的有源表面上提供钝化层，并且可以具有可以暴露芯片焊盘的开口。 密封部分可以形成在划线区域中。

公开(公告)号：US20110104888A1

公开(公告)日：2011-05-05

申请号：US12797837

申请日：2010-06-10

申请人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

发明人： Ki-Hyuk KIM ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC分类号： H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

摘要翻译： 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US20080251939A1

公开(公告)日：2008-10-16

申请号：US12100359

申请日：2008-04-09

申请人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Nam-Seog Kim ,  Son-Kwan Hwang

发明人： Hyun-Soo Chung ,  Dong-Ho Lee ,  Nam-Seog Kim ,  Son-Kwan Hwang

IPC分类号： H01L23/498

CPC分类号： H01L23/525 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01049

摘要： A chip stack package is provided, wherein semiconductor chips having different die sizes are stacked by arranging pads in a scribe region through a redistribution process, so that the thickness of the package can be reduced. A method of fabricating the chip stack package is also provided. In the chip stack package, a plurality of circuit patterns are arranged on one surface of a substrate, and a unit semiconductor chip is mounted thereon. The unit semiconductor chip includes a plurality of semiconductor chips sequentially stacked on the substrate. The semiconductor chips of the unit semiconductor chip have different die sizes. One of the semiconductor chips includes a plurality of first pads arranged in a first chip region, and the other semiconductor chips include second pads arranged in a scribe region at an outside of a second chip region defined by the scribe region.

摘要翻译： 提供了一种芯片堆叠封装，其中具有不同管芯尺寸的半导体芯片通过经由再分配工艺在划线区域中布置衬垫来堆叠，从而可以减小封装的厚度。 还提供了一种制造芯片堆叠封装的方法。 在芯片堆叠封装中，在基板的一个表面上布置多个电路图案，并且在其上安装单元半导体芯片。 单元半导体芯片包括顺序堆叠在基板上的多个半导体芯片。 单元半导体芯片的半导体芯片具有不同的管芯尺寸。 半导体芯片中的一个包括布置在第一芯片区域中的多个第一焊盘，并且其它半导体芯片包括布置在由划线区域限定的第二芯片区域的外侧的划线区域中的第二焊盘。

公开(公告)号：US07312143B2

公开(公告)日：2007-12-25

申请号：US11717691

申请日：2007-03-14

申请人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

发明人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

IPC分类号： H01L23/48

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02165 ,  H01L2224/02335 ,  H01L2224/02351 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05569 ,  H01L2224/10125 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13018 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599

摘要： A wafer level chip scale package may have a gap provided between a solder bump and a bump land. The gap may be filled with a gas. A method of manufacturing a wafer level chip scale package may involve forming a redistribution line having a first opening, forming a seed metal layer having a second opening including an undercut portion, and forming the gap using the first and the second openings.

摘要翻译： 晶片级芯片级封装可以具有设置在焊料凸块和凸起焊盘之间的间隙。 间隙可以填充气体。 制造晶片级芯片级封装的方法可以包括形成具有第一开口的再分配线，形成具有包括底切部分的第二开口的种子金属层，以及使用第一和第二开口形成间隙。

公开(公告)号：US20070170556A1

公开(公告)日：2007-07-26

申请号：US11635011

申请日：2006-12-07

申请人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  In-Young Lee ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  In-Young Lee ,  Dong-Ho Lee

IPC分类号： H01L23/495

CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H05K1/111 ,  H05K3/062 ,  H05K3/3452 ,  H05K3/3457 ,  H05K2201/09745 ,  H05K2203/1184 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device may include a semiconductor element. A layer of material may be provided on the semiconductor element which may have an opening through which a bond pad may be exposed. At least one flange structure may be provided on the first bond pad, the at least one flange structure made of at least two metal layers with different etch rates.

摘要翻译： 半导体器件可以包括半导体元件。 可以在半导体元件上提供一层材料，该层可以具有可以暴露接合焊盘的开口。 可以在第一接合焊盘上提供至少一个凸缘结构，所述至少一个凸缘结构由具有不同蚀刻速率的至少两个金属层制成。

公开(公告)号：US20060214293A1

公开(公告)日：2006-09-28

申请号：US11186763

申请日：2005-07-22

申请人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

发明人： Myeong-Soon Park ,  Hyun-Soo Chung ,  In-Young Lee ,  Jae-Sik Chung ,  Sung-Min Sim ,  Dong-Hyeon Jang ,  Young-Hee Song ,  Seung-Kwan Ryu

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02165 ,  H01L2224/02335 ,  H01L2224/02351 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05569 ,  H01L2224/10125 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13018 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599

摘要： A wafer level chip scale package may have a gap provided between a solder bump and a bump land. The gap may be filled with a gas. A method of manufacturing a wafer level chip scale package may involve forming a redistribution line having a first opening, forming a seed metal layer having a second opening including an undercut portion, and forming the gap using the first and the second openings.

摘要翻译： 晶片级芯片级封装可以具有设置在焊料凸块和凸起焊盘之间的间隙。 间隙可以填充气体。 制造晶片级芯片级封装的方法可以包括形成具有第一开口的再分配线，形成具有包括底切部分的第二开口的种子金属层，以及使用第一和第二开口形成间隙。

公开(公告)号：US07545027B2

公开(公告)日：2009-06-09

申请号：US11448772

申请日：2006-06-08

申请人： Hyun-Soo Chung ,  In-Young Lee ,  Dong-Hyeon Jang ,  Myeong-Soon Park ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  In-Young Lee ,  Dong-Hyeon Jang ,  Myeong-Soon Park ,  Dong-Ho Lee

IPC分类号： H01L23/02

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/10126 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/3025

摘要： A wafer level package may include a semiconductor substrate supporting an electrode pad. A first insulating layer may be provided on the semiconductor substrate. The first insulating layer may include a first opening through which the electrode pad may be exposed. A seed metal layer may be provided on an entire surface of the first insulating layer. A redistribution interconnection metal layer may be provided on the seed metal layer. A second insulating layer may be provided on the redistribution interconnection metal layer. The second insulating layer may have a second opening spaced from the first opening to expose a portion of the redistribution interconnection metal layer. The second insulating layer may surround the redistribution interconnection metal layer. An unwanted portion of seed metal layer may be removed using the second insulating layer as an etch mask.

摘要翻译： 晶片级封装可以包括支撑电极焊盘的半导体衬底。 第一绝缘层可以设置在半导体衬底上。 第一绝缘层可以包括第一开口，电极焊盘可以暴露在第一开口中。 种子金属层可以设置在第一绝缘层的整个表面上。 再分布互连金属层可以设置在种子金属层上。 第二绝缘层可以设置在再分布互连金属层上。 第二绝缘层可以具有与第一开口间隔开的第二开口，以暴露再分布互连金属层的一部分。 第二绝缘层可以包围再分布互连金属层。 可以使用第二绝缘层作为蚀刻掩模去除种子金属层的不需要的部分。