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    Imaging and measuring apparatus for surface and internal interface of object
    1.
    发明授权
    Imaging and measuring apparatus for surface and internal interface of object 有权
    物体表面和内部界面的成像和测量装置

    公开(公告)号：US08379220B2

    公开(公告)日：2013-02-19

    申请号：US12778363

    申请日：2010-05-12

    申请人： I-Jen Hsu ,  Chun-Wei Chang

    发明人： I-Jen Hsu ,  Chun-Wei Chang

    IPC分类号： G01B11/02

    CPC分类号： G01B11/2441

    摘要： The present invention provides an imaging and measuring apparatus for the surface and the internal interface of an object, which comprises a broadband wave source, a wave-splitting structure, a wave-delaying device, a reflecting component, and a sensor. The broadband wave source transmits a broadband incident wave. The wave-splitting structure splits the broadband incident wave into a first incident beam, a second incident beam, and a third incident beam. The first incident beam is illuminated on an object under test, which reflects a measuring beam. The wave-delaying device receives the second incident beam and reflects a reference beam. The reflecting component receives the third incident beam and reflects a calibration beam. The sensor receives a first interference signal of the measuring beam and the reference beam, and a second interference signal of the reference beam and the calibration beam. By means of the broadband incident wave, the morphologies of the surface and the internal interface of the object can be imaged and measured in a non-destructive way. In addition, by means of the calibration beam, the accuracy of imaging and measuring the surface and the internal interface of the object can be improved.

    摘要翻译： 本发明提供一种用于物体的表面和内部界面的成像和测量装置，其包括宽带波源，波分解结构，波延迟装置，反射部件和传感器。 宽带波源传输宽带入射波。 波分解结构将宽带入射波分为第一入射光束，第二入射光束和第三入射光束。 第一个入射光束被照射在被测物体上，反射一个测量光束。 波延迟装置接收第二入射光束并反射参考光束。 反射部件接收第三入射光并反射校准光束。 传感器接收测量光束和参考光束的第一干涉信号，以及参考光束和校准光束的第二干涉信号。 通过宽带入射波，可以以非破坏性的方式对物体的表面和内部界面的形态进行成像和测量。 此外，通过校准光束，可以提高成像和测量物体的表面和内部界面的精度。

    Method of protecting an interlayer dielectric layer and structure formed thereby
    2.
    发明授权
    Method of protecting an interlayer dielectric layer and structure formed thereby 有权
    保护层间电介质层的方法和由此形成的结构

    公开(公告)号：US09263252B2

    公开(公告)日：2016-02-16

    申请号：US13735949

    申请日：2013-01-07

    申请人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

    发明人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/02 ,  H01L29/66

    CPC分类号： H01L21/022 ,  H01L29/66545

    摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

    摘要翻译： 该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。 该方法还包括形成保护层以填充空腔。 该方法还包括平坦化保护层。 平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。 该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。 半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

    Method to Form a CMOS Image Sensor
    3.
    发明申请
    Method to Form a CMOS Image Sensor 有权
    形成CMOS图像传感器的方法

    公开(公告)号：US20140061738A1

    公开(公告)日：2014-03-06

    申请号：US13602494

    申请日：2012-09-04

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    IPC分类号： H01L31/0216

    CPC分类号： H01L21/266 ,  H01L27/14689

    摘要： The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.

    摘要翻译： 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层，在旋涂碳层上方形成的含硅的硬掩模层，以及形成在含硅硬质层的硅层之上的光致抗蚀剂层， 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模，然后转移到旋涂碳上，并且限定要选择性地注入离子的衬底区域。

    ELECTRONIC DEVICE
    4.
    发明申请
    ELECTRONIC DEVICE 审中-公开
    电子设备

    公开(公告)号：US20130027877A1

    公开(公告)日：2013-01-31

    申请号：US13553831

    申请日：2012-07-20

    申请人： Ching-Fu Yang ,  Hui-Lian Chang ,  Ming-Wang Lin ,  Chun-Wei Chang

    发明人： Ching-Fu Yang ,  Hui-Lian Chang ,  Ming-Wang Lin ,  Chun-Wei Chang

    IPC分类号： H05K7/20

    CPC分类号： G06F1/203

    摘要： An electronic device including a main body, a rotating base, a motherboard and a driving module is provided. The rotating base has a first vent. The rotating base is pivoted to the main body and suitable for being rotated between an operating position and a retracting position. When the rotating base is located at the operating position, the first vent is exposed from the main body, and when the rotating base is located at the retracting position, the first vent is retracted in the main body. The driving module includes a controlling element and a first locking element. The controlling element is disposed on the main body and suitable for moving between an enable position and a disable position. The first locking element is connected to the controlling element, and the controlling element drives the first locking element to position the rotating base.

    摘要翻译： 提供一种包括主体，旋转底座，母板和驱动模块的电子设备。 旋转底座具有第一通气口。 旋转底座枢转到主体并且适于在操作位置和缩回位置之间旋转。 当旋转底座位于操作位置时，第一排气孔从主体露出，当旋转底座位于缩回位置时，第一排气口缩回主体。 驱动模块包括控制元件和第一锁定元件。 控制元件设置在主体上并且适于在使能位置和禁用位置之间移动。 第一锁定元件连接到控制元件，并且控制元件驱动第一锁定元件以定位旋转底座。

    VISE QUICK-CHANGE BASE WITH IMPROVED STRUCTURE
    7.
    发明公开
    VISE QUICK-CHANGE BASE WITH IMPROVED STRUCTURE 审中-公开

    公开(公告)号：US20240091910A1

    公开(公告)日：2024-03-21

    申请号：US17933486

    申请日：2022-09-20

    申请人： Chun-Wei Chang

    发明人： Chun-Wei Chang

    IPC分类号： B25B1/24 ,  B25B1/10

    CPC分类号： B25B1/2484 ,  B25B1/103

    摘要： A quick-change vice base with improved structure, which comprises: a base body, a quick-change coupler, a moveable block set and a central bolt, wherein, the bottoms of the first moveable block and second moveable block are respectively locked with a moveable block positioning base, one end of the moveable block positioning base has a pushing block; when the lead screw rotates clockwise, the first moveable block and the second moveable block will move toward the quick-change coupler, so that the curved stopping blocks on the first moveable block and the second moveable block will be fitted into the recesses of the quick-change coupler; when the lead screw rotates anticlockwise, the first movable block and the second movable block will move away from the quick-change coupler and drive the moveable block positioning seat to move simultaneously.

    Fixture block composite structure for workpiece positioning
    8.
    发明授权
    Fixture block composite structure for workpiece positioning 有权

    公开(公告)号：US11077531B2

    公开(公告)日：2021-08-03

    申请号：US16175841

    申请日：2018-10-31

    申请人： Chun-Wei Chang

    发明人： Chun-Wei Chang

    IPC分类号： B23Q3/06 ,  B25B1/02 ,  B25B1/24 ,  B25B1/08

    摘要： A fixture block composite structure for workpiece positioning comprises a fixture block group composed of at least a stop fixture block and at least a one-sided movable fixture block. The stop fixture block is fixed to a base by a plurality of mountings, and two opposite lateral sides of the stop fixture block in the extending direction of base are provided with a fixed upright positioning plane respectively. The one-sided movable fixture block has a fixed holder, the holder is fixed to the base by a plurality of mountings. The holder is provided with a movable piece which can be driven to reciprocate towards the positioning plane on the stop fixture block. The movable piece is provided with a clamping surface on one side facing the positioning plane.

    Method of forming a photoresist layer
    9.
    发明授权
    Method of forming a photoresist layer 有权
    形成光致抗蚀剂层的方法

    公开(公告)号：US09028915B2

    公开(公告)日：2015-05-12

    申请号：US13602465

    申请日：2012-09-04

    申请人： Chun-Wei Chang ,  Chih-Chien Wang ,  Wang-Pen Mo ,  Hung-Chang Hsieh

    发明人： Chun-Wei Chang ,  Chih-Chien Wang ,  Wang-Pen Mo ,  Hung-Chang Hsieh

    IPC分类号： B05D3/12 ,  H01L21/67 ,  G03F7/16

    CPC分类号： H01L21/02282 ,  B05D1/005 ,  G03F7/091 ,  G03F7/162 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/6715

    摘要： A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

    摘要翻译： 公开了一种在半导体器件上形成光致抗蚀剂层的方法。 示例性的包括提供晶片。 该方法还包括在第一次循环期间以第一速度旋转晶片，同时将预湿材料分配在晶片上并以第二速度在第一周期期间旋转晶片，同时预湿材料继续被分配 在晶圆上。 该方法还包括在第一速度的第二循环期间旋转晶片，同时预湿材料继续分配在晶片上，并且在第二次循环期间以第二速度旋转晶片，同时预湿材料继续 分配在晶片上。 该方法还包括以三速旋转晶片，同时将光致抗蚀剂材料分配在包括预湿材料的晶片上。