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    Method and apparatus for reducing particle contamination on wafer backside during CVD process
    3.
    发明授权
    Method and apparatus for reducing particle contamination on wafer backside during CVD process 有权
    用于在CVD工艺期间减少晶片背面上的颗粒污染的方法和装置

    公开(公告)号：US06413321B1

    公开(公告)日：2002-07-02

    申请号：US09731601

    申请日：2000-12-07

    申请人： Bok Hoen Kim ,  Mario Dave Silvetti ,  Ameeta Madhava ,  Davood Khalili ,  Martin Seamons ,  Emanuele Cappello ,  Nam Le ,  Lloyd Berken

    发明人： Bok Hoen Kim ,  Mario Dave Silvetti ,  Ameeta Madhava ,  Davood Khalili ,  Martin Seamons ,  Emanuele Cappello ,  Nam Le ,  Lloyd Berken

    IPC分类号： C23C1600

    CPC分类号： C23C16/4405 ,  C23C16/0209 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/4583

    摘要： Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high quality oxide seasoning layer is deposited to improve adhesion and trapping of contaminants remaining after a prior chamber cleaning step. Second, wafer pre-heating reduces thermal stress on the wafer during physical contact between the wafer and heater. Third, the duration of the gas stabilization flow of thermally reactive process gas species prior to CVD reaction is reduced, thereby preventing side products produced during this stabilization flow from affecting the wafer backside. Fourth, the wafer heater is redesigned to minimize physical contact between the heater surface and the wafer backside. Redesign of the wafer heater may include providing only a few, small projections from the top wafer surface, and also may include providing a continuous circumferential rim supporting the edge of the wafer to interfere with the flow of process gases to the wafer backside during processing.

    摘要翻译： 经过化学气相沉积的半导体晶片的背面颗粒污染通过单独或组合优化各种工艺参数而显着降低。 沉积高质量的氧化物调味剂层以改善在先前的室清洁步骤之后残留的污染物的粘附和捕获。 其次，晶片预热在晶片和加热器之间的物理接触期间降低了晶片上的热应力。 第三，CVD反应之前的热反应过程气体种类的气体稳定化流程的持续时间减少，从而防止在该稳定化流程期间产生的副产物影响晶片背面。 第四，重新设计晶片加热器以最小化加热器表面和晶片背面之间的物理接触。 晶片加热器的重新设计可以包括仅从顶部晶片表面提供几个小的突起，并且还可以包括提供支撑晶片边缘的连续圆周边缘，以干扰处理期间晶片背面的工艺气体流。

    Reduction of plasma edge effect on plasma enhanced CVD processes
    6.
    发明授权
    Reduction of plasma edge effect on plasma enhanced CVD processes 有权
    降低等离子体增强CVD工艺的等离子体边缘效应

    公开(公告)号：US06553932B2

    公开(公告)日：2003-04-29

    申请号：US09853397

    申请日：2001-05-11

    申请人： Kuo-Shih Liu ,  Ramana Veerasingam ,  Zhi Xu ,  Ping Xu ,  Mario Dave Silvetti ,  Gang Chen

    发明人： Kuo-Shih Liu ,  Ramana Veerasingam ,  Zhi Xu ,  Ping Xu ,  Mario Dave Silvetti ,  Gang Chen

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32935

    摘要： An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

    摘要翻译： 一种用于将等离子体限制在衬底处理室的处理区内的设备。 一方面，一种装置包括具有上安装表面，内限制壁和外约束壁的环形构件。 该设备设置在处理室的气体分配组件上或以其他方式连接到处理室的气体分配组件，以防止等离子体对基板表面的影响。 该装置提供等离子体扼流圈，其减小了基板周边周围处理区的体积，从而消除了材料在基板边缘周围的不均匀沉积。