公开(公告)号：US06413321B1

公开(公告)日：2002-07-02

申请号：US09731601

申请日：2000-12-07

申请人： Bok Hoen Kim ,  Mario Dave Silvetti ,  Ameeta Madhava ,  Davood Khalili ,  Martin Seamons ,  Emanuele Cappello ,  Nam Le ,  Lloyd Berken

发明人： Bok Hoen Kim ,  Mario Dave Silvetti ,  Ameeta Madhava ,  Davood Khalili ,  Martin Seamons ,  Emanuele Cappello ,  Nam Le ,  Lloyd Berken

IPC分类号： C23C1600

CPC分类号： C23C16/4405 ,  C23C16/0209 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/4583

摘要： Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high quality oxide seasoning layer is deposited to improve adhesion and trapping of contaminants remaining after a prior chamber cleaning step. Second, wafer pre-heating reduces thermal stress on the wafer during physical contact between the wafer and heater. Third, the duration of the gas stabilization flow of thermally reactive process gas species prior to CVD reaction is reduced, thereby preventing side products produced during this stabilization flow from affecting the wafer backside. Fourth, the wafer heater is redesigned to minimize physical contact between the heater surface and the wafer backside. Redesign of the wafer heater may include providing only a few, small projections from the top wafer surface, and also may include providing a continuous circumferential rim supporting the edge of the wafer to interfere with the flow of process gases to the wafer backside during processing.

摘要翻译： 经过化学气相沉积的半导体晶片的背面颗粒污染通过单独或组合优化各种工艺参数而显着降低。 沉积高质量的氧化物调味剂层以改善在先前的室清洁步骤之后残留的污染物的粘附和捕获。 其次，晶片预热在晶片和加热器之间的物理接触期间降低了晶片上的热应力。 第三，CVD反应之前的热反应过程气体种类的气体稳定化流程的持续时间减少，从而防止在该稳定化流程期间产生的副产物影响晶片背面。 第四，重新设计晶片加热器以最小化加热器表面和晶片背面之间的物理接触。 晶片加热器的重新设计可以包括仅从顶部晶片表面提供几个小的突起，并且还可以包括提供支撑晶片边缘的连续圆周边缘，以干扰处理期间晶片背面的工艺气体流。

公开(公告)号：US06843881B2

公开(公告)日：2005-01-18

申请号：US10115526

申请日：2002-04-02

申请人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

发明人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  G01N21/76 ,  G05D27/02 ,  H01L21/306

CPC分类号： G05D27/02 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/76

摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

摘要翻译： 在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及 排气以排出清洁气体。 检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。 控制器接收信号并评估信号以确定清洁过程的端点。

公开(公告)号：US08444926B2

公开(公告)日：2013-05-21

申请号：US11668947

申请日：2007-01-30

申请人： Mark A. Fodor ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

发明人： Mark A. Fodor ,  Sophia M. Velastegui ,  Bok Hoen Kim ,  Dale R. DuBois

IPC分类号： A62D3/00 ,  B01J19/00 ,  C23F1/00 ,  H01L21/306 ,  B05C11/00 ,  C23C16/00 ,  H05B3/00 ,  H05B11/00

CPC分类号： C23C16/46

摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.

摘要翻译： 提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。 在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。 从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。 衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

公开(公告)号：US08298887B2

公开(公告)日：2012-10-30

申请号：US12824032

申请日：2010-06-25

申请人： Xinhai Han ,  Nagarajan Rajagopalan ,  Ji Ae Park ,  Bencherki Mebarki ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Xinhai Han ,  Nagarajan Rajagopalan ,  Ji Ae Park ,  Bencherki Mebarki ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/8234

CPC分类号： H01L21/0262 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L29/66136 ,  H01L29/868

摘要： Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.

摘要翻译： 描述了在衬底上形成高电流密度垂直p-i-n二极管的方法。 这些方法包括以下步骤：以含有IV族元素的前体和依次暴露于n型掺杂剂前体和p型掺杂剂前体的任一顺序同时组合。 通过在流过含IV族元素的前体的同时减少或消除掺杂剂前体的流动，在n型和p型层之间沉积本征层。 在沉积n型层，本征层和p型层期间，衬底可以驻留在相同的处理室中，并且衬底在相邻层的沉积之间不暴露于大气中。

公开(公告)号：US20120164829A1

公开(公告)日：2012-06-28

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/28

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US08105465B2

公开(公告)日：2012-01-31

申请号：US12577455

申请日：2009-10-12

申请人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

发明人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

IPC分类号： C01B31/00

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/3141

摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

摘要翻译： 提供了在基板上沉积无定形碳层的方法和装置。 在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自 氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成 基底上的共形无定形碳层。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07572337B2

公开(公告)日：2009-08-11

申请号：US11131010

申请日：2005-05-16

申请人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

发明人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US20090104541A1

公开(公告)日：2009-04-23

申请号：US11877559

申请日：2007-10-23

申请人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

发明人： Eui Kyoon Kim ,  Deenesh Padhi ,  Huixiong Dai ,  Mehul Naik ,  Martin Jay Seamons ,  Bok Hoen Kim

IPC分类号： G03F1/00

CPC分类号： G03F7/091 ,  G03F7/11

摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.

摘要翻译： 本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。 随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。 当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。 通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

公开(公告)号：US20090068356A1

公开(公告)日：2009-03-12

申请号：US12255884

申请日：2008-10-22

申请人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

发明人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

IPC分类号： C23C16/00 ,  H01L21/3065

CPC分类号： C23C16/4404 ,  C23C16/4586 ,  H01J37/32522 ,  H01J2237/022

摘要： Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

摘要翻译： 本发明的实施例一般涉及等离子体处理室的装置和方法，其需要较少的维护和停机时间，并且比现有技术具有更高的可靠性。 在一个实施例中，该设备包括搁置在陶瓷轴上的基板支撑件，允许在大气压下与基板支撑件电连接的内轴，支撑在陶瓷支撑结构上但不固定到陶瓷支撑结构的铝基板支撑件，模锻的蓝宝石支架 衬底支撑件内部的加热元件和布置在阿基米德螺旋中的衬底支撑件内的加热元件，以减少衬底支撑件的翘曲并增加其寿命。 方法包括通过减少从室表面产生颗粒来增加室内原位清洗之间的时间。 通过腔室部件的温度控制和腔室相对于处理区域的吹扫气体的非处理区域的加压而发生减少的颗粒产生。