公开(公告)号：US06992360B2

公开(公告)日：2006-01-31

申请号：US10803885

申请日：2004-03-19

Applicant: In Gyoo Kim ,  Gyung Ock Kim

Inventor： In Gyoo Kim ,  Gyung Ock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12002 ,  G02B6/4203 ,  H01L31/0232

Abstract: Provided is a light coupling apparatus that forms an etch structure complex comprising a total reflection surface/an anti-reflection surface within a substrate to improve coupling efficiency with incident light and responsivity of a photodetector device, whereby a surface-illuminated photodetector or an edge-coupled photodetector are all integratable, and it is possible to reduce the degree of difficulty during packaging and to improve the responsivity of the photodetector at low costs.

Abstract translation: 提供一种光耦合装置，其形成包括基板内的全反射面/抗反射面的蚀刻结构复合体，以提高与入射光的耦合效率和光检测器装置的响应度，由此表面照明光电检测器或边缘 - 耦合光电检测器都是可整合的，并且可以降低封装期间的难度，并且以低成本提高光电检测器的响应度。

公开(公告)号：US20070064757A1

公开(公告)日：2007-03-22

申请号：US11492920

申请日：2006-07-26

Applicant: Gyung Ock Kim ,  In Gyoo Kim ,  Ki Joong Lee ,  Cheol Kyun Lee

Inventor： Gyung Ock Kim ,  In Gyoo Kim ,  Ki Joong Lee ,  Cheol Kyun Lee

IPC: H01S5/00

CPC classification number: H01S5/3402 ,  B82Y20/00

Abstract: Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a unit-cell structure, which is comprised of a carrier-multiplication layer structure for multiplying carriers, a carrier guide layer structure, and an QW active region to which carriers are injected, wherein intersubband optical radiative transitions of the carriers occur. Here, the carriers multiplied while passing though the carrier-multiplication layer structure, and injected into a optical transition level of the QW active region can achieve the high population inversion effectively, thereby high laser output power can be obtained with less stacked compact structure.

Abstract translation: 提供了一种雪崩量子子带内过渡半导体激光器。 激光器包括：形成在半导体衬底上的第一覆层，第一波导层，有源区，第二波导层和第二覆层，其中有源区由单元的多个堆叠（周期）组成 - 单元结构，其由用于乘法器的载波倍增层结构，载波引导层结构和注入载流子的QW有源区组成，其中载波的子带间光辐射跃迁发生。 这里，载波在通过载波倍增层结构的同时相乘，并且注入到QW有源区的光跃迁电平中可以有效地实现高群体反转，从而可以获得较小的堆叠紧凑结构的高激光输出功率。

公开(公告)号：US07489492B2

公开(公告)日：2009-02-10

申请号：US12021764

申请日：2008-01-29

Applicant: Hyun Tak Kim ,  Kwang Yong Kang ,  Bong Jun Kim ,  Yong Wook Lee ,  Sun Jin Yun ,  Byung Gyu Chae ,  Gyung Ock Kim

Inventor： Hyun Tak Kim ,  Kwang Yong Kang ,  Bong Jun Kim ,  Yong Wook Lee ,  Sun Jin Yun ,  Byung Gyu Chae ,  Gyung Ock Kim

IPC: H02H3/22 ,  H02H9/04

CPC classification number: H01L49/003

Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Abstract translation: 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

公开(公告)号：US07478954B2

公开(公告)日：2009-01-20

申请号：US11737255

申请日：2007-04-19

Applicant: In Kui Cho ,  Woo Jin Lee ,  Sang Pil Han ,  Seung Ho Ahn ,  Gyung Ock Kim ,  Hee Kyung Sung

Inventor： In Kui Cho ,  Woo Jin Lee ,  Sang Pil Han ,  Seung Ho Ahn ,  Gyung Ock Kim ,  Hee Kyung Sung

IPC: G02B6/43 ,  G02B6/30 ,  G02B6/36

CPC classification number: G02B6/43 ,  G02B6/2552 ,  G02B6/4202 ,  G02B6/4239 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Provided are a method and structure for optical connection between an optical transmitter and an optical receiver. The method includes the steps of: forming on a substrate a light source device, an optical detection device, an optical transmission unit electrically connected with the light source device, and an optical detection unit electrically connected with the optical detection device; preparing a flexible optical transmission-connection medium to optically connect the light source device with the optical detection device; cutting the prepared optical transmission-connection medium and surface-finishing it; and connecting one end of the surface-finished optical transmission-connection medium with the light source device and the other end with the optical detection device. Fabrication of an optical package having a 3-dimensional structure is facilitated and fabrication time is reduced, thus improving productivity. In addition, since the optical transmission-connection medium is directly connected with the light source device and the optical detection device, a polishing operation or additional connection block is not required, thus facilitating mass production.

Abstract translation: 提供了一种用于光发射机和光接收机之间的光连接的方法和结构。 该方法包括以下步骤：在基板上形成光源装置，光检测装置，与光源装置电连接的光传输单元以及与该光检测装置电连接的光检测单元; 准备柔性光传输连接介质以将光源装置与光学检测装置光学连接; 切割准备的光传输连接介质并进行表面处理; 并且将表面光整传输连接介质的一端与光源装置连接，另一端与光学检测装置连接。 促进了具有3维结构的光学封装的制造，并减少了制造时间，从而提高了生产率。 此外，由于光传输连接介质与光源装置和光学检测装置直接连接，因此不需要抛光操作或附加连接块，因此便于批量生产。

公开(公告)号：US20100133585A1

公开(公告)日：2010-06-03

申请号：US12536098

申请日：2009-08-05

Applicant: Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

Inventor： Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

IPC: H01L31/028 ,  C30B23/06

CPC classification number: H01L31/1808 ,  C30B25/10 ,  C30B25/16 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/547

Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.

Abstract translation: 提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。 生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge） 在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。 三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

公开(公告)号：US5977557A

公开(公告)日：1999-11-02

申请号：US145738

申请日：1998-09-02

Applicant: Gyung Ock Kim

Inventor： Gyung Ock Kim

IPC: H01L31/11 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01L31/11

Abstract: The present invention is related to a hot-electron photo transistor. By applying the combination of quantum dots or quantum wires with sizes, the wide spacer layers, and the blocking layers to the electron injecting barrier of the emitter, the wide range of infrared detection can be attained and the resolution of detected infrared wavelength can be increased. And by introducing the resonant tunneling quantum well structure to the base layer the selection, amplification and processing of the specific infrared frequency is possible and the reduction of the dark current is induced. Therefore, the present invention is applicable to ultra-high speed tunable infrared detectors and amplifiers, ultra-high speed switching and logic devices, high speed infrared logic devices with new features, new high-speed infrared logic devices which can reduce the number of logic devices.

Abstract translation: 本发明涉及一种热电子光电晶体管。 通过将量子点或量子线的组合应用于发射体的电子注入势垒的尺寸，宽间隔层和阻挡层，可以获得宽范围的红外检测，并且可以提高检测到的红外波长的分辨率 。 并且通过将谐振隧道量子阱结构引入基极层，可以选择，放大和处理特定的红外频率，并且引起暗电流的减小。 因此，本发明适用于超高速可调谐红外探测器和放大器，超高速开关和逻辑器件，具有新特性的高速红外逻辑器件，可以减少逻辑数量的新型高速红外逻辑器件 设备。

公开(公告)号：US20060189016A1

公开(公告)日：2006-08-24

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US5844253A

公开(公告)日：1998-12-01

申请号：US954738

申请日：1997-10-20

Applicant: Gyung Ock Kim ,  Dong Wan Roh

Inventor： Gyung Ock Kim ,  Dong Wan Roh

IPC: H01L29/68 ,  H01L29/06 ,  H01L31/00 ,  H01L31/0264 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/11 ,  H01L31/12

CPC classification number: B82Y10/00 ,  H01L31/0352 ,  H01L31/1105

Abstract: The present invention relates to an ultra-high speed semiconductor phototransistor which comprises a substrate. A conductive collector layer, on which a collector electrode is formed, is formed on the substrate. A collector barrier layer for collector electric potential is formed on the conductive collector layer. A conductive base layer, on which a base electrode is formed, is formed on the collector electric potential barrier layer. An emitter barrier layer for emitter electric potential is formed on the conductive base layer for injecting hot-electrons onto the conductive base layer. The emitter barrier layer for emitter electric potential further comprises various sizes of quantum-dot array combination structures for absorbing an infrared ray. A blocking barrier layer positioned beneath the quantum-dot array combination structures reduces a dark current passed through the quantum-dot array combination structure. A second buffer layer positioned beneath the blocking barrier layer absorbs an electric potential change in the quantum-dot array combination structure due to the applied voltage. A conductive emitter layer, on which an emitter electrode is formed, is formed on the emitter barrier layer for emitter electric potential.

Abstract translation: 本发明涉及一种包括基板的超高速半导体光电晶体管。 在基板上形成有形成有集电极的导电性集电体层。 集电极电位的集电极势垒层形成在导电集电极层上。 在集电极势垒层上形成有形成有基极的导电性基底层。 在用于将热电子注入导电性基底层的导电性基底层上形成发射极电位的发射极阻挡层。 用于发射极电位的发射极阻挡层还包括用于吸收红外线的各种尺寸的量子点阵列组合结构。 位于量子点阵列组合结构下方的阻挡层减少了通过量子点阵列组合结构的暗电流。 位于阻挡阻挡层下方的第二缓冲层由于所施加的电压而吸收量子点阵列组合结构中的电位变化。 在用于发射极电位的发射极阻挡层上形成有形成有发射极的导电发射极层。

公开(公告)号：US08188512B2

公开(公告)日：2012-05-29

申请号：US12536098

申请日：2009-08-05

Applicant: Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

Inventor： Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

IPC: H01L31/028 ,  C03B23/06

CPC classification number: H01L31/1808 ,  C30B25/10 ,  C30B25/16 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/547

Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.

Abstract translation: 提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。 生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge） 在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。 三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

公开(公告)号：US20100144124A1

公开(公告)日：2010-06-10

申请号：US12536475

申请日：2009-08-05

Applicant: Sang Hoon KIM ,  Dong Woo Suh ,  Ji Ho Joo ,  Gyung Ock Kim ,  Hyun Tak Kim

Inventor： Sang Hoon KIM ,  Dong Woo Suh ,  Ji Ho Joo ,  Gyung Ock Kim ,  Hyun Tak Kim

IPC: H01L21/205

CPC classification number: H01L21/02532 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0262

Abstract: Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.

Abstract translation: 提供了使用减压化学气相沉积（RPCVD）生长具有低穿透位错密度的纯锗（Ge）薄膜的方法，其包括在低温下在硅（Si）衬底上生长Ge薄膜，实现真实 短时间退火，并在高温下生长退火的Ge薄膜。 生长的Ge单晶薄膜可以克服由于Si扩散而产生Si-Ge层的常规问题，以及错配位错到高温Ge薄膜的传播。