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公开(公告)号：US07061945B2
公开(公告)日：2006-06-13
申请号：US10436069
申请日：2003-05-13
CPC分类号： H01S5/18386 , H01S5/18311 , H01S2301/18
摘要： A vertical cavity surface emitting laser (VCSEL) in which a higher order lasing mode produces a Gaussian-like single mode far field beam intensity pattern. Such a VCSEL includes a protective surface deposition on a VCSEL structure, and phase filter elements on the surface deposition. The surface deposition and the phase filter elements implement an optical phase filter that induces optical path difference such that a single mode far field beam intensity pattern results when the VCSEL operates in a higher order lasing mode. The VCSEL can include structures that enhance a selected higher-order operating mode and/or that suppress unwanted operating modes.
摘要翻译： 垂直腔表面发射激光器（VCSEL），其中较高阶激光模式产生高斯样单模远场光束强度图案。 这种VCSEL包括在VCSEL结构上的保护性表面沉积，以及表面沉积上的相位滤波器元件。 表面沉积和相位滤波器元件实现光学相位滤波器，其引起光程差，使得当VCSEL以更高阶的激光模式工作时，单模远场光束强度图案得以产生。 VCSEL可以包括增强所选择的更高阶操作模式和/或抑制不期望的操作模式的结构。
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公开(公告)号：US06558973B2
公开(公告)日：2003-05-06
申请号：US09766797
申请日：2001-01-22
IPC分类号： H01L2100
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.
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3.发明授权Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes 失效发射结构位于防止某些不利模式的位置，并在有利的模式下增强光的产生
公开(公告)号：US5264715A
公开(公告)日：1993-11-23
申请号：US909270
申请日：1992-07-06
申请人： James K. Guenter , Ralph H. Johnson
发明人： James K. Guenter , Ralph H. Johnson
CPC分类号： H01L33/20 , H01L33/105 , H01S5/20 , H01L33/02 , H01L33/145 , H01L33/465 , H01S5/2004
摘要： A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the present invention spaces the mirrors apart by a distance equal to n.lambda./2+.lambda./4, where n is an integer value that is maintained as small as possible within practical constraints. The close proximity of the mirrors and their particular spacing which is determined as a function of the wavelength inhibits undesirable modes of light emission in directions toward the mirrors. This inhibition of light in undesirable modes perpendicular to the mirrors enhances the production of light in modes that are parallel to the mirror surfaces. The overall light output efficiency of the device is enhanced through the inhibition of these undesirable modes.
摘要翻译： 发光器件设置有放置在光源的相对侧上的反射镜并且间隔开一定距离，该距离被确定为由光源发射的光的波长的函数。 本发明的一个具体实施例将镜子间隔开等于nλ/ 2 +λ/ 4的距离，其中n是在实际约束条件下尽可能小的整数值。 反射镜的紧密接近以及其作为波长的函数确定的特定间隔抑制了朝向反射镜的方向上的不期望的发光模式。 这种在与反射镜垂直的不期望的模式中的光的抑制增强了与镜面平行的模式的光的产生。 通过抑制这些不期望的模式，增强了器件的整体光输出效率。
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公开(公告)号：US20110306156A1
公开(公告)日：2011-12-15
申请号：US13210306
申请日：2011-08-15
申请人： Ralph H. Johnson , James K. Guenter
发明人： Ralph H. Johnson , James K. Guenter
IPC分类号： H01L21/302
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper minor; and etching a grating into the grating layer.
摘要翻译： 用于制造偏振锁定垂直腔表面发射激光器（VCSEL）的方法。 步骤包括在基材上生长下反射镜; 在下镜上生长活跃区域; 在活跃地区生长上镜; 在上部小型物体上沉积光栅层; 并将光栅蚀刻到光栅层中。
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公开(公告)号：US08031752B1
公开(公告)日：2011-10-04
申请号：US12340286
申请日：2008-12-19
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/18311 , H01S5/18344 , H01S5/18361 , H01S5/305 , H01S5/3077 , H01S5/3211
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
摘要翻译： 垂直腔表面发射激光器（VCSEL）通过控制有源区域附近的掺杂层和未掺杂层的距离来优化VCSEL的更长寿命。 此外，VCSEL通过形成高Al限制区域并将氧化物置于无效的静态光波中而优化用于在VCSEL的氧化物下降低的寄生横向电流。 此外，VCSEL被优化以降低电阻。
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6.发明授权Light emitting semiconductor device having an electrical confinement barrier near the active region 有权在有源区附近具有电限制屏障的发光半导体器件公开(公告)号：US07920612B2
公开(公告)日：2011-04-05
申请号：US11461353
申请日：2006-07-31
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。
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公开(公告)号：US06693311B2
公开(公告)日：2004-02-17
申请号：US10162928
申请日：2002-06-04
申请人： James K. Guenter , Ralph H. Johnson
发明人： James K. Guenter , Ralph H. Johnson
IPC分类号： H01L310328
CPC分类号： H01L31/101 , H01L31/02161 , H01L31/02164
摘要： A wavelength selective detector having a first absorbing layer for absorbing light with a wavelength below a lower band cutoff, a second absorbing layer downstream of the first absorbing layer for absorbing light with a wavelength below an upper band cutoff, and a confinement layer situated between the first and second absorbing layers. The lower and upper band cutoffs can be set by controlling the bandgaps and/or thicknesses of the first and second absorbing layers. The wavelength selective detector of the present invention has a good out-of-band rejection, a narrow spectral responsivity, and a high in-band responsivity. In addition, the wavelength selective detector is relatively easy to manufacture using conventional integrated circuit fabrication techniques.
摘要翻译： 一种波长选择性检测器，具有用于吸收波长低于低频带截止的波长的第一吸收层，在第一吸收层下游的第二吸收层，用于吸收波长低于上带截止的波长的光，以及位于第二吸收层之间的限制层 第一和第二吸收层。 可以通过控制第一和第二吸收层的带隙和/或厚度来设定下限和上限截止值。 本发明的波长选择性检测器具有良好的带外抑制，窄的光谱响应度和高的带内响应性。 此外，使用传统的集成电路制造技术，波长选择检测器相对容易制造。
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公开(公告)号：US07255746B2
公开(公告)日：2007-08-14
申请号：US10233625
申请日：2002-09-04
申请人： Ralph H. Johnson , Jin K. Kim , James K. Guenter
发明人： Ralph H. Johnson , Jin K. Kim , James K. Guenter
CPC分类号： C30B23/02 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
摘要翻译： MBE氮源二甲基肼，叔丁基肼，硝基三氯化物和NH x自由基。 这些氮源有利于使用MBE在结晶底物上形成含氮材料。 通常使用这样的氮源可以形成具有含氮层的半导体激光器，特别是具有含氮层的VCSEL。
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公开(公告)号：US07251264B2
公开(公告)日：2007-07-31
申请号：US11119292
申请日：2005-04-29
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S3/08
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.
摘要翻译： 本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于 第二距离。 此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。
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公开(公告)号：US06990135B2
公开(公告)日：2006-01-24
申请号：US10283381
申请日：2002-10-28
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.
摘要翻译： 具有分布布拉格反射器的氧化物限制性VCSEL，其具有设置在低Al含量第一层和介质Al含量第二层之间的重掺杂高Al含量氧化物孔形成层。 在第一层和氧化物孔形成层之间可能存在其中Al含量从较高Al含量变为较低Al含量的薄过渡区。 在一些实施方案中，从氧化物孔形成层到第二层的Al浓度可以在一个步骤中发生。 氧化物孔形成层可以设置在由共振激光产生的电场的零点或节点附近或附近。 在氧化物孔形成层的氧化过程中，其它所有的一部分的含铝DBR层也可能被氧化，但是其程度基本较小。 认为这些层的氧化部分和未氧化部分之间的连接点降低了装置的稳定性和/或可靠性。 为了减轻这一点，本发明设想提供一种植入物，蚀刻或其它合适的方法，以减少或消除与这些层的氧化部分和未氧化部分之间的接合相关联的一个或多个电赝象以及减少其它的氧化部分 铝合金轴承层的DBR。
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