摘要:
The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.
摘要:
Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要:
Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.
摘要:
Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要:
Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.
摘要:
Cantilever probes are formed from a multilayer structure comprising an upper substrate, a lower substrate, an interior layer, a first separation layer, and a second separation layer, wherein the first separation layer is situated between the upper substrate and the interior layer, the second separation layer is situated between the lower substrate and the interior layer, and wherein the first and the second separation layers are differentially etchable with respect to the first and the second substrates, the interior layer. The upper substrate is a first device layer from which a probe tip is formed. The interior layer is a second device layer from which a cantilever arm is formed. The lower substrate is a handle layer from which a handle, or base portion, is formed. Patterning and etching processing of any layer is isolated from the other layers by the separation layers.
摘要:
A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.
摘要:
A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate and forming a tip stock extending upwardly from the substrate. The tip stock is preferably FIB milled to form a tip of the probe device. The tip preferably has a high aspect ratio, with a height that is at least about 1 micron for performing critical dimension (e.g., deep trench) atomic force microscopy. The stock is preferably pedestal shaped having a distal end that is substantially planar which can be machined into a tip in at least less than about 2 minutes. With the preferred embodiments, the FIB milling step can be completed in substantially fewer and less complicated steps than known techniques to produce a high aspect ratio tip suitable for DT-AFM in less than about one minute.
摘要:
A process for the removal of sterols, specifically cholesterol, from a triglyceride oil, preferably a marine triglyceride oil, said process comprising contacting an oil with an adsorbent, specifically TRIS YL™, clay or a mixture thereof, heating the mixture to 100° C. to 210° C., preferably 150° C. to 170° C., preferably for a time period of greater than one minute and optionally at a pressure less than 133 Pa, preferably less than 1.33 Pa.
摘要:
The disclosed subject matter relates generally to a method for modifying oil, and specifically to a process for increasing the concentration of polyunsaturated fatty acid in an oil composition.