公开(公告)号：US08546837B2

公开(公告)日：2013-10-01

申请号：US13080764

申请日：2011-04-06

申请人： Jun Ho Jang ,  Geun ho Kim

发明人： Jun Ho Jang ,  Geun ho Kim

IPC分类号： H01L29/22

CPC分类号： H01L29/167 ,  H01L25/167 ,  H01L29/866 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2933/0033 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.

摘要翻译： 公开了一种具有垂直结构的发光器件，其封装及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 该方法包括在衬底上生长具有多层结构的半导体层，在半导体层上形成第一电极，将包括生长的半导体层的衬底分离成单元器件，将分离的单元器件分别连接在子座上，分离 来自半导体层的衬底，并且在根据衬底的分离而暴露的半导体层的表面上形成第二电极。

公开(公告)号：US20110180833A1

公开(公告)日：2011-07-28

申请号：US13080764

申请日：2011-04-06

申请人： Jun Ho Jang ,  Geun Ho Kim

发明人： Jun Ho Jang ,  Geun Ho Kim

IPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/58

CPC分类号： H01L29/167 ,  H01L25/167 ,  H01L29/866 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2933/0033 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.

摘要翻译： 公开了一种具有垂直结构的发光器件，其封装及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 该方法包括在衬底上生长具有多层结构的半导体层，在半导体层上形成第一电极，将包括生长的半导体层的衬底分离成单元器件，将分离的单元器件分别连接在子座上，分离 来自半导体层的衬底，并且在根据衬底的分离而暴露的半导体层的表面上形成第二电极。

公开(公告)号：US20070194343A1

公开(公告)日：2007-08-23

申请号：US11701535

申请日：2007-02-02

申请人： Jun Ho Jang ,  Geun ho Kim

发明人： Jun Ho Jang ,  Geun ho Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/167 ,  H01L25/167 ,  H01L29/866 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2933/0033 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.

摘要翻译： 公开了一种具有垂直结构的发光器件，其封装及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 该方法包括在衬底上生长具有多层结构的半导体层，在半导体层上形成第一电极，将包括生长的半导体层的衬底分离成单元器件，将分离的单元器件分别连接在子座上，分离 来自半导体层的衬底，并且在根据衬底的分离而暴露的半导体层的表面上形成第二电极。

公开(公告)号：US08283690B2

公开(公告)日：2012-10-09

申请号：US13214871

申请日：2011-08-22

申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

IPC分类号： H01L33/02 ,  H01L33/10

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

公开(公告)号：US08203162B2

公开(公告)日：2012-06-19

申请号：US12656612

申请日：2010-02-04

申请人： Jun Ho Jang ,  Hyun Jae Lee

发明人： Jun Ho Jang ,  Hyun Jae Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2224/24

摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

摘要翻译： 公开了具有垂直结构的发光器件及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 发光器件包括具有多层结构的半导体层，布置在半导体层的一个表面的第一电极，布置在第一电极上的金属支撑体和布置在第一电极和金属支撑体之间的冲击阻尼层，以及 由具有高于用于金属支撑件的金属的延展性的延展性的金属制成。

公开(公告)号：US20120018700A1

公开(公告)日：2012-01-26

申请号：US13219356

申请日：2011-08-26

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/04

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US07834374B2

公开(公告)日：2010-11-16

申请号：US11708133

申请日：2007-02-20

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/40 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US07687811B2

公开(公告)日：2010-03-30

申请号：US11704390

申请日：2007-02-09

申请人： Jun Ho Jang ,  Yong Tae Moon

发明人： Jun Ho Jang ,  Yong Tae Moon

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L2933/0083

摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

摘要翻译： 公开了具有垂直结构的发光器件及其制造方法，其能够提高光提取效率。 该方法包括在衬底上形成光提取层，在光提取层上形成多个半导体层，在半导体层上形成第一电极，在第一电极上形成支撑层，去除衬底，形成第二电极 去除基板的表面上的电极。

公开(公告)号：US08648376B2

公开(公告)日：2014-02-11

申请号：US13612343

申请日：2012-09-12

申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

IPC分类号： H01L33/02 ,  H01L33/10

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

公开(公告)号：US08202753B2

公开(公告)日：2012-06-19

申请号：US12877652

申请日：2010-09-08

申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并且具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。