公开(公告)号：US5575853A

公开(公告)日：1996-11-19

申请号：US496480

申请日：1995-06-29

申请人： Junichi Arami ,  Masayuki Kitamura ,  Mitsuaki Komino

发明人： Junichi Arami ,  Masayuki Kitamura ,  Mitsuaki Komino

IPC分类号： F04B37/16 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4412

摘要： A main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to a processing chamber and an auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump. Since a main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to the processing chamber in this manner, not only can improvements in the exhaust characteristics be expected, but it is also possible to reduce the diameter of the auxiliary pipeline from the main pump onward and make the auxiliary pump smaller. Since the auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump, the size and cost of the entire system can be reduced.

摘要翻译： 具有广泛的真空排气能力和高排气速度的主泵连接在处理室附近，并且具有低排气速度的辅助泵通过小直径辅助管道连接到主泵的排气侧。 由于具有广泛的真空排气能力和高排气速度的主泵以这种方式连接在处理室附近，所以不仅可以预期排气特性的改善，而且还可以减小直径 辅助管路从主泵向前，使辅助泵更小。 由于具有低排气速度的辅助泵通过小直径辅助管道连接到主泵的排气侧，所以可以减小整个系统的尺寸和成本。

公开(公告)号：US5581874A

公开(公告)日：1996-12-10

申请号：US410736

申请日：1995-03-27

申请人： Makoto Aoki ,  Mitsuaki Komino ,  Masayuki Kitamura

发明人： Makoto Aoki ,  Mitsuaki Komino ,  Masayuki Kitamura

IPC分类号： H01L21/00 ,  H01R43/00

CPC分类号： H01L21/67069 ,  Y10T279/23 ,  Y10T29/49117 ,  Y10T29/49885

摘要： A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.

摘要翻译： 一种处理装置，包括一个包含半导体晶片的处理室，能够从该处理室供应和排出的气体;一个用于支撑被处理室内容纳的处理室的支撑台，一个供气系统 用于将气体供应到处理室中，以及用于从处理室排出气体的排气系统。 处理室的内壁和支撑台由铝基材料形成，其表面与含氟气体接触，从而用AlF 3涂覆表面。

公开(公告)号：US5958140A

公开(公告)日：1999-09-28

申请号：US686604

申请日：1996-07-26

申请人： Junichi Arami ,  Kenji Ishikawa ,  Masayuki Kitamura

发明人： Junichi Arami ,  Kenji Ishikawa ,  Masayuki Kitamura

IPC分类号： H01L21/22 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  H01L21/67017 ,  H01L21/67098

摘要： A one-by-one type heat-processing apparatus is disclosed. The one-by-one type heat-processing apparatus includes a processing vessel for processing a semiconductor wafer. A susceptor having a support surface for placing the semiconductor wafer is arranged in the processing vessel. A shower head section is arranged at an interval with respect to the support surface of the susceptor. Processing gas supply pipes for supplying a processing gas are independently connected to the shower head section. A plurality of gas injection holes are formed in the shower head section. First to third heating means for heating the susceptor are attached to the susceptor. The first heating means having a disk-like shape is arranged at almost the center on the lower surface side of the susceptor. The second heating means is concentrically arranged to surround the first heating means. The third heating means is arranged at the peripheral edge portion of the susceptor. The diameter of a gas injection region having the plurality of gas injection holes on the surface of the shower head section opposite to the susceptor is substantially equal to the diameter of the third heating means. The apparatus also includes a central control section capable of independently controlling the first to third heating means.

摘要翻译： 公开了一种一体式热处理装置。 一对一型热处理装置包括用于处理半导体晶片的处理容器。 具有用于放置半导体晶片的支撑表面的感受体布置在处理容器中。 淋浴头部分相对于基座的支撑表面间隔设置。 用于供应处理气体的处理气体供应管独立地连接到淋浴头部分。 在喷头部形成有多个喷气孔。 用于加热基座的第一至第三加热装置附接到基座。 具有盘状形状的第一加热装置几乎位于基座的下表面侧的中心。 第二加热装置同心地布置成围绕第一加热装置。 第三加热装置设置在基座的周缘部。 在淋浴喷头部的与基座相反的表面上具有多个气体喷射孔的气体注入区域的直径基本上等于第三加热装置的直径。 该装置还包括能够独立地控制第一至第三加热装置的中央控制部。

公开(公告)号：US08487449B2

公开(公告)日：2013-07-16

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L29/70 ,  H01L21/4763

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US20130075912A1

公开(公告)日：2013-03-28

申请号：US13424791

申请日：2012-03-20

申请人： Satoshi Wakatsuki ,  Ichiro Mizushima ,  Atsuko Sakata ,  Masayuki Kitamura

发明人： Satoshi Wakatsuki ,  Ichiro Mizushima ,  Atsuko Sakata ,  Masayuki Kitamura

IPC分类号： H01L23/48 ,  H01L21/20

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.

摘要翻译： 根据一个实施例，一种制造半导体器件的方法包括：在半导体衬底上形成氧化硅膜; 在氧化硅膜中形成通孔; 在通孔内形成接触层; 在所述接触层上形成硅层; 以及通过使含钨气体与硅层反应形成嵌入通孔中的钨膜。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20070054064A1

公开(公告)日：2007-03-08

申请号：US10566241

申请日：2004-12-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/306 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).

摘要翻译： 微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时 物体相对于线性等离子体保持在水平位置。 等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。 提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

公开(公告)号：US06435869B2

公开(公告)日：2002-08-20

申请号：US09839157

申请日：2001-04-23

申请人： Masayuki Kitamura

发明人： Masayuki Kitamura

IPC分类号： F27D500

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C23C16/488

摘要： A quartz window can withstand a pressure difference between an atmospheric pressure and a negative pressure environment created in a thermal processing apparatus that applies a thermal process to a target object under the negative pressure environment. The quartz window is adapted to be positioned between a radiation heat source and an object to be subjected to a heat treatment in the process chamber. The quartz window has a plate made of quartz and a plurality of ribs formed on the plate so as to reinforce the plate.

摘要翻译： 石英窗可承受在负压环境下对目标物体施加热处理的热处理装置中产生的大气压和负压环境之间的压力差。 石英窗口适于位于辐射热源和待处理室内进行热处理的物体之间。 石英窗具有由石英制成的板和形成在板上的多个肋，以便加强板。

公开(公告)号：US5539844A

公开(公告)日：1996-07-23

申请号：US389994

申请日：1995-02-17

申请人： Hajime Tazumi ,  Masayuki Kitamura ,  Hiroshi Ueno ,  Tsuyoshi Okumura ,  Shigetaka Ashida

发明人： Hajime Tazumi ,  Masayuki Kitamura ,  Hiroshi Ueno ,  Tsuyoshi Okumura ,  Shigetaka Ashida

IPC分类号： F16C19/06 ,  F16C33/38 ,  F16C33/41 ,  F16C33/42

CPC分类号： F16C33/418 ,  F16C33/416 ,  F16C33/427 ,  F16C19/06

摘要： A ball bearing cage is formed with pockets each having an inwardly curved spherical pocket face similar to a ball in shape. At least one of the pockets has a protrusion projecting inwardly thereof from one of inner and outer circumferential edge portions of the pocket face. A ball bearing comprises balls retained between inner and outer bearing rings and equispaced circumferentially thereof by a cage. The cage is formed with pockets each having an inwardly curved spherical pocket face similar to the ball in shape, at least one of the pockets having a protrusion projecting inwardly thereof from an edge portion of the face close to the fixed one of the rings.

摘要翻译： 球轴承保持架形成有各自具有类似于球形的向内弯曲的球形口袋面的凹穴。 至少一个凹穴具有从口袋面的内圆周边缘部分和外圆周边缘部分之一向内突出的突起。 滚珠轴承包括保持在内轴承环和外轴承环之间并且通过保持架在其周向等间隔的球的滚珠。 保持架形成有各自具有类似于球形的向内弯曲的球形凹穴面的凹穴，至少一个凹穴具有从靠近固定环之一的面的边缘部向内突出的突起。

公开(公告)号：US08742592B2

公开(公告)日：2014-06-03

申请号：US13424791

申请日：2012-03-20

申请人： Satoshi Wakatsuki ,  Ichiro Mizushima ,  Atsuko Sakata ,  Masayuki Kitamura

发明人： Satoshi Wakatsuki ,  Ichiro Mizushima ,  Atsuko Sakata ,  Masayuki Kitamura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.

摘要翻译： 根据一个实施例，一种制造半导体器件的方法包括：在半导体衬底上形成氧化硅膜; 在氧化硅膜中形成通孔; 在通孔内形成接触层; 在所述接触层上形成硅层; 以及通过使含钨气体与硅层反应形成嵌入通孔中的钨膜。