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公开(公告)号：US20080258258A1
公开(公告)日：2008-10-23
申请号：US12103857
申请日：2008-04-16
申请人： Katsu HORIKOSHI , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Katsu HORIKOSHI , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L29/92
CPC分类号： H01L23/642 , H01L23/3114 , H01L23/481 , H01L23/5223 , H01L24/11 , H01L24/12 , H01L24/25 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/1132 , H01L2224/131 , H01L2224/18 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/3512 , H01L2224/13099 , H01L2924/00
摘要： The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
摘要翻译： 本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。 半导体集成电路和焊盘电极形成在半导体衬底的前表面上。 在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。 第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。 因此，电容器电极，第二绝缘膜和布线层形成电容器。
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公开(公告)号：US08410577B2
公开(公告)日：2013-04-02
申请号：US12103857
申请日：2008-04-16
申请人： Katsu Horikoshi , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Katsu Horikoshi , Hisayoshi Uchiyama , Takashi Noma , Yoshinori Seki , Hiroshi Yamada , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L29/92
CPC分类号： H01L23/642 , H01L23/3114 , H01L23/481 , H01L23/5223 , H01L24/11 , H01L24/12 , H01L24/25 , H01L24/29 , H01L24/32 , H01L27/14618 , H01L27/14683 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/1132 , H01L2224/131 , H01L2224/18 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/3512 , H01L2224/13099 , H01L2924/00
摘要： The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
摘要翻译： 本发明提供了一种半导体器件，其中具有电容器元件以实现器件的尺寸减小，电容器元件具有比常规更大的电容。 半导体集成电路和焊盘电极形成在半导体衬底的前表面上。 在半导体衬底的侧表面和后表面上形成第二绝缘膜，并且在半导体衬底的背面与第二绝缘膜之间形成电容电极，与半导体衬底的后表面接触。 第二绝缘膜由与焊盘电极电连接的布线层覆盖，并且布线层和电容器电极与第二绝缘膜重叠。 因此，电容器电极，第二绝缘膜和布线层形成电容器。
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公开(公告)号：US09034729B2
公开(公告)日：2015-05-19
申请号：US12438869
申请日：2007-08-22
申请人： Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
发明人： Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
IPC分类号： H01L21/30 , H01L27/146 , B81C1/00
CPC分类号： H01L27/14618 , B81C1/00269 , B81C2203/0118 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014
摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造工艺简化并且制造成本降低，并且制造该半导体器件的方法。 此外，本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上，其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上，其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2，第一支撑体5和第二支撑体7包围的空腔9中。
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公开(公告)号：US20090206349A1
公开(公告)日：2009-08-20
申请号：US12438869
申请日：2007-08-22
申请人： Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
发明人： Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
CPC分类号： H01L27/14618 , B81C1/00269 , B81C2203/0118 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014
摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造工艺简化并且制造成本降低，并且制造该半导体器件的方法。 此外，本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上，其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上，其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2，第一支撑体5和第二支撑体7包围的空腔9中。
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公开(公告)号：US20070145590A1
公开(公告)日：2007-06-28
申请号：US11639411
申请日：2006-12-15
申请人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L23/52
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。
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公开(公告)号：US08766408B2
公开(公告)日：2014-07-01
申请号：US11714906
申请日：2007-03-07
申请人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L21/00
CPC分类号： H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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公开(公告)号：US07986021B2
公开(公告)日：2011-07-26
申请号：US11639410
申请日：2006-12-15
申请人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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公开(公告)号：US07633133B2
公开(公告)日：2009-12-15
申请号：US11639411
申请日：2006-12-15
申请人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L31/0203 , H01L31/0216 , H01L31/0224
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。
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公开(公告)号：US20070145420A1
公开(公告)日：2007-06-28
申请号：US11639410
申请日：2006-12-15
申请人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L27/148
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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公开(公告)号：US08102039B2
公开(公告)日：2012-01-24
申请号：US12376917
申请日：2007-08-02
申请人： Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Takashi Noma , Yuichi Morita , Hiroshi Yamada , Kazuo Okada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L23/02
CPC分类号： H01L25/105 , B81B7/007 , B81C1/00238 , H01L23/13 , H01L23/481 , H01L24/97 , H01L25/0657 , H01L2224/16145 , H01L2225/0652 , H01L2225/06555 , H01L2225/1035 , H01L2225/1058 , H01L2225/1088 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/1461 , H01L2924/15788 , H01L2924/3511 , H01L2924/00
摘要： This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
摘要翻译： 本发明旨在提供一种能够实现较小尺寸的器件及其制造方法的封装型半导体器件以及小型堆叠层型半导体器件及其制造方法。 在半导体基板2上形成与器件部件1电连接的器件部件1和焊盘电极4.支撑部件7通过粘接层6与半导体基板2的表面接合。 支撑构件7中的孔15从其顶表面穿透到后表面。 通过通孔15可实现与另一装置的电连接。凹部12形成在支撑构件7的上表面的部分区域中。因此，可以设置其他装置或部件的全部或一部分 利用凹陷部分12中的空间。当形成层叠型半导体器件时，通过将上层的半导体器件50的一部分安装到凹陷部分12的内部来进行堆叠。
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