公开(公告)号：US20100034994A1

公开(公告)日：2010-02-11

申请号：US11992917

申请日：2006-10-02

申请人： Kazuhito Hori ,  Kenichi Endo ,  Kazuhiko Yamamoto ,  Junichi Iida

发明人： Kazuhito Hori ,  Kenichi Endo ,  Kazuhiko Yamamoto ,  Junichi Iida

IPC分类号： B41M5/52 ,  B41M5/50

CPC分类号： B41M5/508 ,  B41M5/506 ,  B41M5/5218 ,  B41M2205/38

摘要： An ink-jet recording medium which comprises: a resin-coated paper comprising a base paper and resin layers with which both surfaces of the base paper are coated, respectively; and an ink-receiving layer formed by coating on one of the resin layers, the ink-receiving layer containing an inorganic particle and a binder for the inorganic particle and the inorganic particle being made of alumina, wherein the base paper has a thickness of 100 to 300 μm and the thickness ratio of one of the resin layers that is located between the base paper and the ink-receiving layer to the other resin layer is as follows: (the one resin layer):(the other resin layer)=1:1 to 1:2.

摘要翻译： 一种喷墨记录介质，包括：分别涂覆有原纸的两个表面的原纸和树脂层的树脂涂布纸; 以及通过在一个树脂层上涂覆形成的油墨接受层，含有无机颗粒的油墨接收层和用于无机颗粒的粘合剂和由氧化铝制成的无机颗粒，其中原纸的厚度为100 至300μm，并且位于原纸和油墨接收层之间的一个树脂层与另一个树脂层的厚度比如下：（一个树脂层）:(另一个树脂层）= 1 1：1：2。

公开(公告)号：US20090142519A1

公开(公告)日：2009-06-04

申请号：US12083642

申请日：2006-10-16

申请人： Nobuyuki Nagai ,  Kenichi Endo ,  Kazuhiko Yamamoto ,  Junichi Iida

发明人： Nobuyuki Nagai ,  Kenichi Endo ,  Kazuhiko Yamamoto ,  Junichi Iida

IPC分类号： B41M5/50 ,  B41M5/00 ,  B41M5/52

CPC分类号： B41M5/502 ,  B41M5/506 ,  B41M2205/38

摘要： An ink-receiving layer has a bilayer constitution, which is formed by sequentially laminating a lower layer and an upper layer on a support. The upper layer contains alumina having an average pore diameter of less than 5 nm (alumina A) and alumina having an average pore diameter of 5 nm or more (alumina B) in a weight ratio of (alumina A):(alumina B)=100:0 to 70:30; the lower layer contains the alumina A and the alumina B in a weight ratio of (alumina A):(alumina B)=0:100 to 50:50; and the thickness ratio of the upper layer to the lower layer is as follows: (upper layer):(lower layer)=2:1 to 5:1.

摘要翻译： 油墨接收层具有通过在支撑体上依次层叠下层和上层而形成的双层结构。 上层含有平均孔径小于5nm的氧化铝（氧化铝A）和平均孔径为5nm以上的氧化铝（氧化铝B）（氧化铝A）:(氧化铝B）= 100：0到70:30; 下层含有（氧化铝A）:(氧化铝B）= 0:100〜50:50的重量比的氧化铝A和氧化铝B; 上层与下层的厚度比如下：（上层）:(下层）= 2:1〜5:1。

公开(公告)号：US08866119B2

公开(公告)日：2014-10-21

申请号：US13051264

申请日：2011-03-18

申请人： Kazuhiko Yamamoto ,  Kenji Aoyama

发明人： Kazuhiko Yamamoto ,  Kenji Aoyama

IPC分类号： H01L29/04 ,  H01L47/00 ,  H01L29/06 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC分类号： H01L45/04 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/149 ,  H01L45/1675

摘要： According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.

摘要翻译： 根据一个实施例，存储器件包括选择元件层，纳米材料聚集体层和细颗粒。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层具有多个与插入的间隙聚集的微导电体。 细颗粒至少具有由氮氧化硅制成的表面。 微细颗粒分散在纳米材料聚集体层的一部分中的微导电体之间，该纳米材料聚集体层在厚度方向上穿透纳米材料聚集体层。

公开(公告)号：US08729517B2

公开(公告)日：2014-05-20

申请号：US13044951

申请日：2011-03-10

申请人： Takuya Konno ,  Kazuhiko Yamamoto

发明人： Takuya Konno ,  Kazuhiko Yamamoto

IPC分类号： H01L45/00

CPC分类号： H01L45/141 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/148 ,  H01L45/1608

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。 第一互连在衬底的主表面上沿第一方向延伸。 第二互连在不平行于第一方向的第二方向上延伸。 电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变 和第二互连。 电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。

公开(公告)号：US20120205609A1

公开(公告)日：2012-08-16

申请号：US13235842

申请日：2011-09-19

申请人： Shigeto OSHINO ,  Kenji Aoyama ,  Kazuhiko Yamamoto ,  Shinichi Nakao ,  Kei Watanabe ,  Satoshi Ishikawa

发明人： Shigeto OSHINO ,  Kenji Aoyama ,  Kazuhiko Yamamoto ,  Shinichi Nakao ,  Kei Watanabe ,  Satoshi Ishikawa

IPC分类号： H01L45/00 ,  H01L21/8239 ,  B82Y99/00

CPC分类号： H01L27/101 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/2481 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer.

摘要翻译： 根据一个实施例，存储器件包括下电极层，纳米材料组合层，保护层和上电极层。 纳米材料组装层设置在下电极层上，并且包括通过间隙组装的多个细导体。 保护层设置在纳米材料组装层上，导电，与细导体接触，并包括开口。 上电极层设置在保护层上并与保护层接触。

公开(公告)号：US20120119179A1

公开(公告)日：2012-05-17

申请号：US13354380

申请日：2012-01-20

申请人： Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L47/00 ,  H01L21/02 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a memory device includes a nanomaterial aggregate layer of a plurality of fine conductors aggregating via gaps and an insulating material disposed in the gaps.

摘要翻译： 根据一个实施例，存储器件包括通过间隙聚集的多个细小导体的纳米材料聚集体层和设置在间隙中的绝缘材料。

公开(公告)号：US20120056145A1

公开(公告)日：2012-03-08

申请号：US13018765

申请日：2011-02-01

申请人： Kenji AOYAMA ,  Kazuhiko Yamamoto ,  Satoshi Ishikawa ,  Shigeto Oshino

发明人： Kenji AOYAMA ,  Kazuhiko Yamamoto ,  Satoshi Ishikawa ,  Shigeto Oshino

IPC分类号： H01L45/00 ,  H01L21/02 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： H01L45/16 ,  B82Y10/00 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.

摘要翻译： 根据一个实施例，非易失性存储器件包括选择元件层和纳米材料聚集层。 选择元件层包括硅。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层包括分散在微导电体之间的多个间隙中的多个微导电体和微粒。 至少微细颗粒的表面由氧化硅以外的绝缘材料制成。

公开(公告)号：US20110303888A1

公开(公告)日：2011-12-15

申请号：US13044865

申请日：2011-03-10

申请人： Hiroyuki FUKUMIZU ,  Yasuhiro Nojiri ,  Tsukasa Nakai ,  Kazuhiko Yamamoto

发明人： Hiroyuki FUKUMIZU ,  Yasuhiro Nojiri ,  Tsukasa Nakai ,  Kazuhiko Yamamoto

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1608 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and a carbon-containing barrier layer provided at least one of between the first electrode film and the memory layer and between the second electrode film and the memory layer. The barrier layer has lower electrical resistivity than the memory layer.

摘要翻译： 根据一个实施例，非易失性存储器件包括连接到第一互连和第二互连的存储单元。 存储单元包括多个层。 多个层包括夹在第一电极膜和第二电极膜之间的含碳存储层和设置在第一电极膜和存储层之间以及第二电极膜和第二电极膜之间的至少一个的含碳阻挡层， 内存层。 阻挡层的电阻率比存储层低。

公开(公告)号：US20100321454A1

公开(公告)日：2010-12-23

申请号：US12820278

申请日：2010-06-22

申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

IPC分类号： B41J3/407

CPC分类号： B41M5/52 ,  B41M5/5245 ,  B41M5/5254 ,  B41M5/5263 ,  B41M5/5281 ,  B41M5/529

摘要： The present invention relates to an inkjet recording sheet for forming an image using aqueous pigment ink comprising: a substrate; and an ink-receiving layer formed on the substrate, wherein the ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition, and wherein, in the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.

摘要翻译： 本发明涉及一种使用含水颜料墨水形成图像的喷墨记录纸，包括：基材; 以及形成在所述基板上的墨接收层，其中所述墨接收层通过在所述基板上涂布涂料组合物而获得，所述涂料组合物包含：具有可水解甲硅烷基作为交联组分的阳离子丙烯酸硅酮乳液基树脂; 阳离子聚醚基聚氨酯树脂; 和含有碳化二亚胺基团的树脂，然后使所涂覆的涂料组合物固化，其中在涂料组合物中，阳离子丙烯酸硅氧烷乳液基树脂的含量为2〜7质量％，阳离子聚醚 - 基于聚氨酯的聚氨酯树脂为88〜94质量％，含碳二亚胺基的树脂的含量以固形物计为2〜6质量％。

公开(公告)号：US20080265380A1

公开(公告)日：2008-10-30

申请号：US12104353

申请日：2008-04-16

申请人： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

发明人： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： H01L21/316 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.

摘要翻译： 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。