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    Thin film forming apparatus using laser
    2.
    发明授权
    Thin film forming apparatus using laser 失效
    使用激光的薄膜成形装置

    公开(公告)号：US5622567A

    公开(公告)日：1997-04-22

    申请号：US158844

    申请日：1993-11-29

    申请人： Kazuyoshi Kojima ,  Tetsuya Takami ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa

    发明人： Kazuyoshi Kojima ,  Tetsuya Takami ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa

    IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/00

    CPC分类号： C23C14/087 ,  C23C14/022 ,  C23C14/22 ,  C23C14/28 ,  C23C14/3471 ,  C23C14/54 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  Y10S505/732

    摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

    摘要翻译： 使用激光的薄膜形成装置包括：室（1），放置在其中的靶（5），用于将目标物（5）发射激光的激光源（10）和基板保持器（3）。 当用激光束（16）照射靶（5）时，产生羽流（15），并且包含在羽流（15）中的材料沉积在由基板保持器（3）保持的基板（2）的表面上。 从激光光源（10）发射的激光束的横截面通过遮蔽板（4804）时成形为期望的形状，使得靶（5）的表面被均匀地照射 光强分布。 因此，产生具有均匀的活性粒子密度分布的羽流（15），因此可以在不损害基板的情况下，在宽的区域上形成具有均匀膜质量的高质量的薄膜。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090142871A1

    公开(公告)日：2009-06-04

    申请号：US12323634

    申请日：2008-11-26

    申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yosuke Suzuki ,  Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Yasunori Tokuda ,  Tatsuo Omori

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/325 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063

    摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

    摘要翻译： 半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。 在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此 在p型GaN接触层的表面上形成氧化膜。 然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。 随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06600195B1

    公开(公告)日：2003-07-29

    申请号：US09637870

    申请日：2000-08-15

    申请人： Yukio Nishida ,  Hirokazu Sayama ,  Hidekazu Oda ,  Toshiyuki Oishi

    发明人： Yukio Nishida ,  Hirokazu Sayama ,  Hidekazu Oda ,  Toshiyuki Oishi

    IPC分类号： H01L2976

    CPC分类号： H01L29/66583 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823456 ,  H01L29/66492 ,  H01L29/66537 ,  H01L29/7833

    摘要： A semiconductor device capable of preventing variations in threshold voltage and having high reliability is provided. The semiconductor device includes a semiconductor substrate having a semiconductor region, and a field-effect transistor. The field-effect transistor includes a gate electrode, source and drain regions, and a channel region. The channel region includes a pair of lightly doped impurity regions having a relatively low impurity concentration as well as a heavily doped impurity region located between the lightly doped impurity regions and having a relatively high impurity concentration.

    摘要翻译： 提供能够防止阈值电压变化并具有高可靠性的半导体器件。 半导体器件包括具有半导体区域的半导体衬底和场效应晶体管。 场效应晶体管包括栅电极，源极和漏极区以及沟道区。 沟道区包括杂质浓度相对较低的一对轻掺杂杂质区，以及位于轻掺杂杂质区之间并具有较高杂质浓度的重掺杂杂质区。

    Nitride semiconductor device and method of manufacturing the same
    8.
    发明授权
    Nitride semiconductor device and method of manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US07842962B2

    公开(公告)日：2010-11-30

    申请号：US11274422

    申请日：2005-11-16

    申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

    发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

    IPC分类号： H01L33/00

    CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

    摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

    摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。