公开(公告)号：US4803392A

公开(公告)日：1989-02-07

申请号：US86488

申请日：1987-08-18

申请人： Keiko Kushida ,  Hiroshi Takeuchi ,  Toshio Kobayashi ,  Kazumasa Takagi ,  Kenzo Susa

发明人： Keiko Kushida ,  Hiroshi Takeuchi ,  Toshio Kobayashi ,  Kazumasa Takagi ,  Kenzo Susa

IPC分类号： H01L41/08 ,  H01L41/113 ,  H04R17/00 ,  H04R31/00

CPC分类号： H01L41/081 ,  H01L41/1132 ,  H01L41/316

摘要： There is provided a piezoelectric transducer comprising a substrate having a single crystal plate comprising strontium titanate or magnesium oxide, a first electrode comprising metal films so formed on the substrate as to leave openings exposing the surface of the substrate, a piezoelectric thin film comprising lead titanate as the main component formed so as to cover the openings and the first electrode, and a second electrode formed on the piezoelectric thin film.

摘要翻译： 提供了一种压电换能器，其包括具有包括钛酸锶或氧化镁的单晶板的基板，第一电极包括在基板上形成的金属膜，以留下露出基板表面的开口，包含钛酸铅的压电薄膜 作为形成为覆盖开口和第一电极的主要部件和形成在压电薄膜上的第二电极。

公开(公告)号：US4876144A

公开(公告)日：1989-10-24

申请号：US111283

申请日：1987-10-22

申请人： Kenzo Susa ,  Kazumasa Takagi ,  Toshio Kobayashi ,  Takanobu Takayama ,  Norio Ohta

发明人： Kenzo Susa ,  Kazumasa Takagi ,  Toshio Kobayashi ,  Takanobu Takayama ,  Norio Ohta

IPC分类号： C30B23/08 ,  C30B29/52 ,  G11B5/31 ,  G11B11/105

CPC分类号： G11B5/3109 ,  G11B11/10536 ,  G11B11/10547 ,  G11B11/10591 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/265 ,  Y10T428/31678

摘要： It is disclosed that a Heusler alloy thin film having a structure of a single crystal is prepared by forming a Heusler alloy thin film having a magneto-optical effect and an MgAgAs type crystalline structure on a single crystal substrate, whereby magnetization is easily effected in a low applied magnetic field. This single crystal thin film is suitable as a material of a head for writing magnetically and reading out optically.

摘要翻译： 公开了通过在单晶衬底上形成具有磁光效应和MgAgAs型晶体结构的Heusler合金薄膜来制备具有单晶结构的Heusler合金薄膜，从而容易地在 低施加磁场。 这种单晶薄膜适合作为用于书写磁头并在光学上读出的磁头的材料。

公开(公告)号：US4016244A

公开(公告)日：1977-04-05

申请号：US543430

申请日：1975-01-23

申请人： Kenzo Susa ,  Toshio Kobayashi ,  Satoshi Taniguchi ,  Mitsuru Ishii

发明人： Kenzo Susa ,  Toshio Kobayashi ,  Satoshi Taniguchi ,  Mitsuru Ishii

IPC分类号： C01B21/064 ,  C04B35/5831 ,  C01B35/14

CPC分类号： C01B21/064 ,  C04B35/5831 ,  C01P2004/61

摘要： In synthesizing cubic boron nitride from hexagonal boron nitride under high temperature and high pressure conditions, if water is incorporated into the raw material in an amount of at least 3% by weight, cubic boron nitride of a higher purity in the form of smaller crystallites than in conventional products can be obtained under lower temperature and lower pressure conditions than in conventional methods. When graphitic hexagonal boron nitride is used as the raw material, the temperature and pressure necessary for synthesis can be reduced to about 600.degree. C. and 50 Kbar, respectively.

摘要翻译： 在高温和高压条件下从六方氮化硼合成立方氮化硼时，如果将水以至少3％（重量）的量掺入原料中，则较小晶粒形式的纯度更高的立方氮化硼比 在常规方法中可以在较低温度和较低压力条件下获得常规产品。 当使用石墨六方氮化硼作为原料时，合成所需的温度和压力可分别降低至约600℃和50千巴。

公开(公告)号：US4691983A

公开(公告)日：1987-09-08

申请号：US660144

申请日：1984-10-12

申请人： Toshio Kobayashi ,  Kazumasa Takagi ,  Tokuumi Fukazawa

发明人： Toshio Kobayashi ,  Kazumasa Takagi ,  Tokuumi Fukazawa

IPC分类号： G02F1/095 ,  H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  G02B6/10

CPC分类号： G02F1/0955 ,  H01S3/0064 ,  H01S5/026 ,  H01S5/0064

摘要： Optical waveguide and the method for making the same, in which a semiconductor laser diode and an optical isolator are formed on one substrate in a monolithic manner. At the moment, a semiconductor laser diode is made by a III-V compound semiconductor crystal, such as GaAs, InP, etc., and an optical isolator is made of iron garnet to fabricate these in monolithic, and this invention was established by developing the technology to monocrystallize at least a small part of the garnet film containing no iron which is deposited on the semiconductor substrate and to use this as the seed crystal for the said phase epitaxial growth of the iron garnet film which forms the iron garnet optical waveguide.

摘要翻译： 光波导及其制造方法，其中半导体激光二极管和光隔离器以单片方式形成在一个基板上。 此时，半导体激光二极管由GaAs，InP等III-V族化合物半导体晶体制成，光隔离器由铁石榴石制成，以单片制造，本发明是通过开发 将沉积在半导体衬底上的不含铁的石榴石薄膜的至少一部分单晶化并将其用作形成铁石榴石光波导的铁石榴石膜的所述相外延生长的晶种的技术。

公开(公告)号：US20130337125A1

公开(公告)日：2013-12-19

申请号：US13523804

申请日：2012-06-14

申请人： Toshio Kobayashi

发明人： Toshio Kobayashi

IPC分类号： A23L1/162 ,  B65B55/14 ,  B65B55/19

CPC分类号： A23L7/109 ,  B65B19/34 ,  B65B55/14 ,  B65B55/19

摘要： In a raw material preparing step, a rice powder as a primary raw material powder is added with a water to prepare a mixed raw material. In a kneading step, the mixed raw material is kneaded to form a kneaded substance. In a pressing/extending step, the kneaded substance is pressed and extended to form noodle dough sheet. In a slitting step, the noodle dough sheet is slit into predetermined noodle strand shape to obtain a continuous noodle strand However, these steps maintain a non-alpha state of the rice powder component In a packaging step, a unit-length noodle strand is accommodated in a pouch-like heat-resistant packaging container and hermetically sealed to obtain a packaged unit-length noodle strand, while maintaining a non-alpha state of the rice powder component in the noodle strand.

摘要翻译： 在原料制备工序中，将作为主要原料粉末的米粉加入水中以制备混合原料。 在捏合步骤中，将混合的原料捏合以形成捏合物。 在压延/延伸步骤中，将捏合的物质压制并延伸以形成面条面片。 在切割步骤中，将面条片切成预定的面条形状以获得连续的面条。然而，这些步骤保持米粉成分的非α状态在包装步骤中，容纳单位面条 在袋状耐热包装容器中进行气密密封以获得包装的单位长度的面条，同时保持面粉条中的米粉成分的非α状态。

公开(公告)号：US20130313267A1

公开(公告)日：2013-11-28

申请号：US13983507

申请日：2012-08-31

申请人： Yoshimasa Horio ,  Shinya Nagahata ,  Toshio Kobayashi ,  Tarou Yamaguchi ,  Shuhei Sugimoto ,  Kazuya Nakanishi ,  Junichi Kurita ,  Hiroki Hamano ,  Shinya Kojima ,  Noriyuki Miyaji

发明人： Yoshimasa Horio ,  Shinya Nagahata ,  Toshio Kobayashi ,  Tarou Yamaguchi ,  Shuhei Sugimoto ,  Kazuya Nakanishi ,  Junichi Kurita ,  Hiroki Hamano ,  Shinya Kojima ,  Noriyuki Miyaji

IPC分类号： F25D11/00

CPC分类号： F25D11/00 ,  F25D23/06 ,  F25D2201/14

摘要： The present invention provides a refrigerator with improved refrigerator box strength and high heat insulating performance, which is configured such that external deformation due to entry of air into a vacuum heat insulating material, the entry of air being caused by aging degradation, is prevented. The present invention includes: a heat-insulated box including an inner casing and an outer casing, in which space between the inner casing and the outer casing is filled with a foamed heat insulating material; and a vacuum heat insulating material disposed in at least a side wall of the heat-insulated box together with the foamed heat insulating material, the vacuum heat insulating material including an outer skin material, the outer skin material including at least a core material and being decompression-sealed. The vacuum heat insulating material includes a gas adsorbent. Since the vacuum heat insulating material including the gas adsorbent is included in the side wall, which tends to be greatly distorted among the heat insulating walls of the refrigerator, the rigidity of the side wall is improved and aging degradation of the vacuum heat insulating material is suppressed. As a result, the rigidity of the heat-insulated box can be maintained for a long term, and external deformation of the outer casing of the body can be prevented.

摘要翻译： 本发明提供了一种具有改善的冰箱箱强度和高绝热性能的冰箱，其被构造成使得由于空气进入真空绝热材料而导致的外部变形，由老化劣化引起的空气进入。 本发明包括：包括内壳和外壳的绝热箱，其中内壳和外壳之间的空间填充有泡沫绝热材料; 以及设置在所述隔热箱的至少侧壁中的所述真空绝热材料与所述发泡绝热材料一起，所述真空绝热材料包括外皮材料，所述外皮材料至少包括芯材，并且是 减压密封。 真空绝热材料包括气体吸附剂。 由于包括气体吸附剂的真空隔热材料包括在侧壁中，在冰箱的绝热壁之间容易发生大的变形，所以侧壁的刚性提高，真空隔热材料的老化劣化是 被压制 结果，可以长期保持隔热箱的刚性，并且可以防止身体的外壳的外部变形。

公开(公告)号：US20120153507A1

公开(公告)日：2012-06-21

申请号：US13331121

申请日：2011-12-20

申请人： Syota MIKI ,  Takaharu Yamano ,  Toshio Kobayashi

发明人： Syota MIKI ,  Takaharu Yamano ,  Toshio Kobayashi

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L21/568 ,  H01L23/3128 ,  H01L24/19 ,  H01L2224/12105 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00

摘要： A method include disposing a semiconductor chip having an electrode pad formed on a circuit forming surface on one surface of a support so that the electrode pad contacts with the one surface of the support, forming a first insulating layer on the one surface of the support so that the first insulating layer covers at least a side surface of the semiconductor chip, removing the support and forming an interconnection terminal on the electrode pad, forming a second insulating layer on the circuit forming surface of the semiconductor chip and the first insulating layer so that the second insulating layer covers the interconnection terminal, exposing an end portion of the interconnection terminal from a top surface of the second insulating layer, and forming a wiring pattern that is electrically connected to the end portion of the interconnection terminal, on the top surface of the second insulating layer.

摘要翻译： 一种方法包括在支撑体的一个表面上设置具有形成在电路形成表面上的电极焊盘的半导体芯片，使得电极焊盘与支撑体的一个表面接触，在支撑体的一个表面上形成第一绝缘层， 第一绝缘层至少覆盖半导体芯片的侧表面，去除支撑并在电极焊盘上形成互连端子，在半导体芯片的电路形成表面和第一绝缘层上形成第二绝缘层，使得 所述第二绝缘层覆盖所述互连端子，将所述互连端子的端部从所述第二绝缘层的顶表面露出，并且形成与所述互连端子的端部电连接的布线图案， 第二绝缘层。

公开(公告)号：US07807510B2

公开(公告)日：2010-10-05

申请号：US12123744

申请日：2008-05-20

申请人： Toshio Kobayashi

发明人： Toshio Kobayashi

IPC分类号： H01L23/31 ,  H01L21/70

CPC分类号： H05K1/144 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K3/3436 ,  H05K2201/10234 ,  H05K2201/10977 ,  H05K2203/1322 ,  H01L2924/00012 ,  H01L2924/00

摘要： There are provided the steps of connecting a chip component 13 to a first substrate 10 through a wire 14, providing an electrode 21 on a second substrate 20, attaching, to the first substrate 10, a molding tool 30 having a protruded portion 31 formed corresponding to an array of a bump connecting pad 12 of the first substrate 10 and a cavity 32 formed corresponding to a region in which the chip component 13 is mounted, thereby forming a first sealing resin 34 for sealing the chip component 13 and the wire 14, bonding the electrode 21 to the bump connecting pad 12 through a solder, thereby bonding the first substrate 10 to the second substrate 20, and filling a second filling resin 40 in a clearance portion between the first substrate 10 and the second substrate 20.

摘要翻译： 提供了通过线14将芯片部件13连接到第一基板10的步骤，在第二基板20上提供电极21，将电极21附接到第一基板10，模制工具30具有对应形成的突出部分31 涉及第一基板10的凸块连接焊盘12的阵列和与安装芯片部件13的区域对应地形成的空腔32，由此形成用于密封芯片部件13和导线14的第一密封树脂34， 通过焊料将电极21接合到凸块连接焊盘12，从而将第一基板10接合到第二基板20，并且将第二填充树脂40填充在第一基板10和第二基板20之间的间隙部分中。

公开(公告)号：US07159303B2

公开(公告)日：2007-01-09

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US07023061B2

公开(公告)日：2006-04-04

申请号：US11072505

申请日：2005-03-07

申请人： Kazumasa Nomoto ,  Toshio Kobayashi ,  Akihiro Nakamura ,  Ichiro Fujiwara ,  Toshio Terano

发明人： Kazumasa Nomoto ,  Toshio Kobayashi ,  Akihiro Nakamura ,  Ichiro Fujiwara ,  Toshio Terano

IPC分类号： H01L29/76

CPC分类号： H01L27/11568 ,  H01L21/2815 ,  H01L27/115 ,  H01L29/6656

摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.

摘要翻译： 一种半导体器件，其能够以近似的间隔布置字线，包括排列成阵列的多个存储晶体管，以及同时作为沿行方向延伸的同一行中的存储晶体管的栅电极的多条字线，并重复 在列方向上，在多个字线之间形成绝缘膜以使字线彼此绝缘和隔离，并且字线分隔的尺寸由绝缘膜的厚度限定。