摘要:
A plurality of sense amplifiers (SAj), each of which is connected with each bit line pair extending from a memory cell array region of a dynamic random access memory for sensing and amplifying voltage difference between the bit line pair, are arranged along the longitudinal direction of the bit line pairs. Each bit line pair is formed by a first bit line (BLj) and a second bit line (BLj). A plurality of memory cells (Mij) are arranged on intersection points between some of the bit lines (BLj, BLj) and word lines (WLi), thereby to form the memory cell array region. At least the first bit line (BLj) or the second bit line (BLj) forming each bit line pair connected to each sense amplifier (SAj) is adapted to intersect with other sense amplifier(s) (SAj) provided on the memory cell array region side as viewed from each sense amplifier (SAj). The sense amplifiers can be arranged independently of the spaces between the bit lines. The sense amplifier circuit having desired characteristics can be structured, while the density of the memory cell array can be increased.
摘要:
Made up of a step of preparing a map expressing a correlation between solid phase percentage and viscosity of a slurry-form semi-solid metal (27) for a given metal composition; a step of setting a target viscosity corresponding to a target solid phase percentage using this map; a viscosity measuring step of measuring the viscosity of a semi-solid metal in a vessel (13) while cooling it; and a step of carrying out cooling until this viscosity reaches the target viscosity, by these steps being carried out in from the preparation of the map expressing the correlation between solid phase percentage and viscosity of the semi-solid metal to the end of cooling of the semi-solid metal the solid phase percentage of the semi-solid metal is made to match the target solid phase percentage. Because the viscosity is detected, the affects of cooling rate changes and time can be eliminated, and it is possible to raise management accuracy of the solid phase percentage of the semi-solid metal much further than with related art management based on time.
摘要:
In a semiconductor memory device selectively implementing one of a 4K refresh cycle and a 8K refresh cycle, the positions of externally applied address signal bits are switched internally by address switching circuits such that memory cells at the same positions are selected regardless of whether the 4K refresh cycle or the 8K refresh cycle is specified according to a refresh cycle mode specify signal. As a result, by testing the device in one refresh cycle mode, the device can be checked in both refresh cycle operations, reducing the test time and making the test easier.
摘要:
A DRAM includes a package, a semiconductor chip housed in the package, and a plurality of leads each disposed from the outside of the package over the periphery of the semiconductor chip. The power supply potential is applied to some of the leads. Corresponding to one power supply lead, one power supply pad and one selection pad are formed. Corresponding to another power supply lead, another power supply pad and another selection pad are formed. Each of these two selection pads is connected or not connected to the corresponding power supply lead by bonding. As a result, one of four word configurations is selected. Since these two selection pads are disposed in the vicinity of the corresponding power supply leads, respectively, the number of times of bonding to one power supply lead is reduced.
摘要:
A rolling mill has a work roll and a back-up roll for supporting the work roll vertically and driving it. A plurality of horizontal support rollers contact the work roll at barrel diameter outside the rolling region and at a both horizontal sides of the work roll and act to fix the position of the work roll in both horizontal directions during rolling and to oppose horizontal rolling forces. In order to reduce the bending of the work roll during rolling, there are provided means for applying horizontal counterbending forces to the work roll comprising members e.g. rollers, contacting the work roll at locations axially further from the rolling region than the support rollers and actuator means for urging the members against the work roll. The counterbending forces being in the same direction as the net horizontal force applied to said work roll by said back-up roll and the material being rolled. Preferably at least one condition of said work roll is sensed during rolling, and there are control means acting during rolling to control the counterbending forces in dependence on the sensed condition.
摘要:
Methods of controlling the wavelength and output power of a laser device with two intracavity etalons are disclosed, together with a wavelength monitor capable of detecting sidebands. A method is characterized by the usage of hot/cold parameter K which takes two values 0 and 1 indicating the cold and hot state of the device, respectively. The parameter K, which is reset to 0 at the start, is set to 1 when the laser beam is stabilized; it is reset to 0, whenever the lasing pause exceeds a predetermined time length. Preparatory starting steps are performed or omitted at the start, depending on the value of K. Another method is characterized by the adjustment of the intracavity etalons during the lasing pauses, in accordance with exponential functions with thermal time constants. The sideband detecting wavelength monitor comprises a single etalon whose free spectal region FSRm is selected with respect to that, FSR.sub.2, of the fine tuning intracavity etalon in such a manner that the interference fringes of the sidebands formed by the monitor etalon are distinct from each other and from those of the central wavelength .lambda..sub.0. Namely, when i is the integer which is associated with a sideband wavelength .lambda..sub.S via the equation: .lambda..sub.S =.lambda..sub.0 +i.times.FSR.sub.2, the free spectral regions FSR.sub.2 and FSRm are selected in such a manner that the apparent wavelength differences: R=i.multidot.FSR.sub.2 +j.multidot.FSRm between the central wavelength .lambda..sub.0 and the sideband wavelengths .lambda..sub.S, wherein j is an integer which minimizes the value of R for each i, are different from zero and from each other.
摘要:
A coated film manufacturing method and a coating machine are provided which can prevent deformation of a die coater due to evaporation of a coating liquid and prevent surface deficiency occurring when starting the coating. A coating machine is prepared which includes a die coater having a manifold, a slot communicating with the manifold, and a lip face formed at an end of the slot, a heat-insulating plate being disposed in a region below the lip face of the die coater and having a tapered top end portion, and a depressurizing chamber being disposed upstream in a web conveying direction from the die coater. The coating machine is made to stand by at a position for forming a clearance greater than a predetermined clearance between the coating machine and the web at the time of coating while flowing the coating liquid from the die coater.
摘要:
A coating apparatus includes: a slot die configured to apply coating solution on a support by discharging the coating solution from a tip of a slot and forming a coating solution bead in a clearance between the tip of the slot and the support; a pipe through which the coating solution is fed to a pocket of the slot die; an orifice formed in the pipe at a position nearer a circumference of a circular cross section in a radial direction of the pipe in relation to a center of the circular cross section; a forward tapered inlet channel which is formed at an entrance side of the orifice in the pipe and whose aperture narrows to the orifice; a rearward tapered outlet channel which is formed at an exit side of the orifice in the pipe and whose aperture grows toward a downstream.
摘要:
A coating apparatus for a plurality of cylindrical light sensitive members each for use in an electrophotography, is provided with a coating tank in which a coating liquid is stored; a dipping device to lift down the plurality of cylindrical base members into the coating liquid and to lift up the plurality of cylindrical base members above the coating liquid so that the plurality of cylindrical base members are coated with the coating liquid; and a plurality of drying hoods corresponding in number to the plurality of cylindrical base members and provided above the coating tank so that each of the plurality of cylindrical base members is lifted up from the coating tank into a respective drying hood among the plurality of cylindrical base members.
摘要:
A control signal generating circuit in a synchronous semiconductor memory device outputs timing signals for controlling activation of a word line and activation of sense amplifier, by delaying an external control signal by prescribed time periods. A bank control signal generating circuit provided for each bank holds activation of the timing signal from the control signal generating circuit, and outputs a signal for controlling timing of activation of the word line and timing of activation of the sense amplifier of the corresponding bank.