-
公开(公告)号:US4678919A
公开(公告)日:1987-07-07
申请号:US883425
申请日:1986-07-14
申请人: Kenji Sugishima , Kenji Nakagawa
发明人: Kenji Sugishima , Kenji Nakagawa
IPC分类号: G03F7/20 , H01J37/304 , H01L21/027 , H01L21/30 , H01J37/24
CPC分类号: H01L21/30 , H01J37/304
摘要: An electron beam exposure system for producing a desired pattern on a workpiece. The pattern is specified by predetermined pattern data. The pattern data is modified with correction data. The correction data is obtained from information indicating variations on the level of the surface of the workpiece due to an elastic deformation thereof during the exposure process. With the use of the correction data, the desired pattern is correctly reproduced as intended when the workpiece is fully supported and the surface thereof recovers its flatness.
摘要翻译: 一种用于在工件上产生所需图案的电子束曝光系统。 该图案由预定图案数据指定。 模式数据用修正数据修改。 从曝光过程中由于其弹性变形引起的工件表面的水平变化的信息获得校正数据。 通过使用校正数据,当工件被完全支撑并且其表面恢复其平坦度时,期望的图案被正确地再现。
-
公开(公告)号:US20150152529A1
公开(公告)日:2015-06-04
申请号:US14115268
申请日:2012-10-15
IPC分类号: C22C38/44 , C22C38/54 , C22C19/05 , C22C27/04 , C22C30/02 , C22C30/00 , C22C38/52 , C22C38/42 , C22C38/58 , B32B15/01 , C22C27/06
CPC分类号: C22C38/44 , B22F7/08 , B22F9/082 , B23K9/04 , B23K35/30 , B23K35/3033 , B23K35/3053 , B23K35/3093 , B32B15/013 , B32B2255/205 , C22C19/05 , C22C19/053 , C22C19/056 , C22C19/07 , C22C27/04 , C22C27/06 , C22C30/00 , C22C30/02 , C22C30/04 , C22C38/42 , C22C38/52 , C22C38/54 , C22C38/58 , C23C4/04 , C23C4/06 , F01L3/02 , F01L3/04 , Y10T428/12778 , Y10T428/1284 , Y10T428/12854 , Y10T428/12931 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951 , Y10T428/12979
摘要: A hard-facing alloy having impact resistance, wear resistance and hot corrosion resistance and containing Fe which is a bountiful resource and inexpensive is provided. Provided are: a Ni—Fe—Cr alloy containing 0 to 20.0 mass % of Mo, 8.0 to 40.0 mass % of W, 20.0 to 40.0 mass % of a total amount of Mo and W, 20.0 to 50.0 mass % of Fe, 12.0 to 36.0 mass % of Cr and 1.0 to 2.5 mass % of B, and the remainder being Ni and unavoidable impurities; and an engine valve welded with the same alloy. The above Ni—Fe—Cr alloy can further contain 15 mass % or less of a total amount of elements selected from Co, Mn, Cu, Si and C, in such cases, 15.0 mass % or less of Co, 5.0 mass % or less of each of Mn and Cu, 2.0 mass % or less of Si and 0.5 mass % or less of C are preferred.
摘要翻译: 提供具有耐冲击性,耐磨性和耐热腐蚀性并且含有丰富的资源和廉价的Fe的硬质合金。 提供:含有0〜20.0质量%的Mo,8.0〜40.0质量%的W,20.0〜40.0质量%的Mo和W,20.0〜50.0质量%的Fe,12.0的Mo-Ni-Fe-Cr合金 至36.0质量%的Cr和1.0〜2.5质量%的B,余量为Ni和不可避免的杂质; 和用相同合金焊接的发动机阀。 上述Ni-Fe-Cr合金可以进一步含有选自Co,Mn,Cu,Si和C中的元素的总量的15质量%以下,在这种情况下,Co为15.0质量%以下,5.0质量%以下, 较少的Mn和Cu,2.0质量%以下的Si和0.5质量%以下的C。
-
公开(公告)号:US08647923B2
公开(公告)日:2014-02-11
申请号:US13262915
申请日:2010-04-02
IPC分类号: H01L21/00
CPC分类号: H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译: 一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板,使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离,以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。
-
公开(公告)号:US20090154854A1
公开(公告)日:2009-06-18
申请号:US11991408
申请日:2006-08-31
申请人: Hideki Akamatsu , Kenji Nakagawa
发明人: Hideki Akamatsu , Kenji Nakagawa
CPC分类号: F16C33/7809 , F16C19/466 , F16J15/32
摘要: A coreless seal 11 for being assembled in a shell-type roller bearing provided in a shell-type roller bearing comprises an elastic annular member 12. An outer diameter B of the coreless seal 11 for being assembled in the shell-type roller bearing is a dimension provided by adding interference 2A for an amount of thermal shrinkage to an inner diameter C of a shell-type outer ring. Since the annular member 12 shrinks in a direction shown by an arrow W at low temperature, the outer diameter of the coreless seal 11 for being assembled in the shell-type roller bearing is reduced from B to B′. However, since the outer diameter B is provided with the dimension A obtained by adding interference for an amount of thermal shrinkage, the coreless seal 11 for being assembled in the shell-type roller bearing has interference A′ in its outer diameter B′ even after the shrinkage.
摘要翻译: 用于装配在壳型滚动轴承中的壳型滚子轴承中的无芯密封件11包括弹性环形构件12.用于组装在壳型滚动轴承中的无芯密封件11的外径B为 通过将壳体型外圈的内径C的热收缩量加上干涉2A来提供尺寸。 由于环状构件12在低温下以箭头W所示的方向收缩,因此组装在壳型滚子轴承中的无芯密封件11的外径从B减小到B'。 然而,由于外径B具有通过对热收缩量加上干涉而获得的尺寸A,所以组装在壳型滚动轴承中的无芯密封件11即使在其外径B'之后也具有干涉A' 收缩。
-
公开(公告)号:US06555922B1
公开(公告)日:2003-04-29
申请号:US09427925
申请日:1999-10-27
申请人: Kenji Nakagawa
发明人: Kenji Nakagawa
IPC分类号: H01L2348
CPC分类号: H01L24/05 , H01L22/32 , H01L23/544 , H01L24/48 , H01L2223/54473 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/05572 , H01L2224/05599 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/13091 , H01L2924/14 , H01L2224/45099 , H01L2924/00
摘要: A semiconductor device includes a bonding pad formed on a substrate and a mark region formed on the substrate right underneath the bonding pad, such that the mark region is covered by the bonding pad.
摘要翻译: 半导体器件包括形成在衬底上的接合焊盘和形成在焊盘正下方的衬底上的标记区域,使得标记区域被焊盘覆盖。
-
公开(公告)号:US6093511A
公开(公告)日:2000-07-25
申请号:US944515
申请日:1997-10-06
申请人: Hiroyuki Tanaka , Kenji Nakagawa
发明人: Hiroyuki Tanaka , Kenji Nakagawa
IPC分类号: G03F1/38 , G03F1/00 , G03F1/44 , G03F7/20 , H01L21/027 , H01L21/308 , H01L2/308
CPC分类号: G03F7/70641 , G03F1/44 , H01L21/308
摘要: The present invention relates to a method of manufacturing a semiconductor device including a step of exposing a resist by use of an exposure mask. An object of the present invention is to facilitate a level adjustment of the reticle and thus automatically determine an optimum focus. The present invention has steps of providing a reticle with a plurality of inspection patterns, which are positioned within a dicing line area around a semiconductor integrated circuit forming area on the reticle, and of which each has a size such that their transferred patterns are changed in shape according to an amount of deviation in focus, and exposing a resist by use of the reticle.
摘要翻译: 本发明涉及一种制造半导体器件的方法,该半导体器件包括通过使用曝光掩模使抗蚀剂曝光的步骤。 本发明的一个目的是促进光罩的水平调节,并因此自动地确定最佳聚焦。 本发明具有以下步骤:提供具有多个检查图案的掩模版,所述检查图案位于掩模版上的半导体集成电路形成区域周围的切割线区域内,并且其中的每一个具有使其转印图案改变的尺寸 根据焦点偏离量形成,并通过使用掩模版曝光抗蚀剂。
-
公开(公告)号:US5514498A
公开(公告)日:1996-05-07
申请号:US138002
申请日:1993-10-19
申请人: Kenji Nakagawa
发明人: Kenji Nakagawa
摘要: A reticle and a method of fabricating the same for projecting a fine pattern on an object surface comprises: a transparent substrate; a first type phase-shifter selectively patterned and deposited on the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter; and a second type phase-shifter selectively patterned and forming a groove in the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter. The reticle may include a patterned shield layer which interrupts transmission of light, and the phase difference of the first and second type phase-shifters is many times selected substantially equal to a half wavelength of light. Another type of a reticle comprises: a transparent substrate; a phase-shifter of a first groove; and another phase-shifter of a second deeper groove formed in the first groove.
摘要翻译: 掩模版及其制造方法,用于在物体表面上投影精细图案,包括:透明基板; 选择性地图案化并沉积在衬底上的第一类型移相器,其产生通过其中的光与通过其它区域的光之间的相位差,而没有移相器; 以及选择性地图案化并在衬底中形成凹槽的第二类型移相器,其产生穿过其中的光与通过其它区域的光之间的相位差,而没有移相器。 掩模版可以包括中断光的传输的图案化屏蔽层,并且第一和第二类型移相器的相位差被选择为基本上等于半波长的光的许多次。 掩模版的另一种类型包括:透明基板; 第一槽的移相器; 以及形成在第一凹槽中的第二深槽的另一个移相器。
-
公开(公告)号:US5499791A
公开(公告)日:1996-03-19
申请号:US112853
申请日:1993-08-26
申请人: Kenji Nakagawa , Koichi Yoshizaki , Tadashi Nukaga , Yoshikazu Banba , Shigetaka Hattori , Kentaro Mochizuki
发明人: Kenji Nakagawa , Koichi Yoshizaki , Tadashi Nukaga , Yoshikazu Banba , Shigetaka Hattori , Kentaro Mochizuki
CPC分类号: H02K5/24 , D06F39/125 , F16F1/371 , F16F7/00 , F16F2230/0047 , F16F2230/14
摘要: A machine with vibration source includes a frame for carrying a vibration source such as a motor. A housing is attached to a bottom of the frame, in which a sphere made of a rigid material is housed rotation free in a manner that a portion of the sphere is projected from an opening at the bottom of the housing. The surface of a plate made of a rigid material contacts the portion of the sphere projecting from the housing and the plate is surrounded by a member of an elastic material. The elastic member has an upwardly extending portion which surrounds the housing, and therefore, the elastic member controls the relative position between the sphere and the plate, and resultingly, rolling of the machine can be suppressed. In addition, since the sphere can be rotated on the plate, horizontal vibration of the machine is absorbed to be suppressed. Furthermore, since the sphere is supported by the plate and the plate is supported by a floor via the elastic member, vertical vibration of the machine is also suppressed.
摘要翻译: 具有振动源的机器包括用于承载诸如马达的振动源的框架。 壳体附接到框架的底部,其中由刚性材料制成的球容纳旋转自由,使得球的一部分从壳体底部的开口突出。 由刚性材料制成的板的表面接触从壳体突出的球体的部分,并且板被弹性材料的构件包围。 弹性构件具有围绕壳体的向上延伸部分,因此弹性构件控制球体与板之间的相对位置,从而可以抑制机器的滚动。 此外,由于球体可以在板上旋转,吸收机器的水平振动以被抑制。 此外,由于球体由板支撑,并且板通过弹性构件由地板支撑,所以也抑制了机器的垂直振动。
-
公开(公告)号:US5276551A
公开(公告)日:1994-01-04
申请号:US716987
申请日:1991-06-18
申请人: Kenji Nakagawa
发明人: Kenji Nakagawa
摘要: A reticle and a method of fabricating the samer for projecting a fine pattern on an object surface comprises: a. transparent substrate; a first type phase-shifter selectively patterned and deposited on the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter; and a second type phase-shifter selectively patterned and forming a groove in the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter. The reticle may include a patterned shield layer which interrupts transmission of light, and the phase difference of the first and second type phase-shifters is many times selected substantially equal to a half wavelength of light. Another type of a reticle comprises: a transparent substrate; a phase-shifter of a first groove; and another phase-shifter of a second deeper groove formed in the first groove.
摘要翻译: 掩模版和制造用于在物体表面上投射精细图案的印模的方法包括:a。 透明基材 选择性地图案化并沉积在衬底上的第一类型移相器,其产生通过其中的光与通过其它区域的光之间的相位差,而没有移相器; 以及选择性地图案化并在衬底中形成凹槽的第二类型移相器,其产生穿过其中的光与通过其它区域的光之间的相位差,而没有移相器。 掩模版可以包括中断光的传输的图案化屏蔽层,并且第一和第二类型移相器的相位差被选择为基本上等于半波长的光的许多次。 掩模版的另一种类型包括:透明基板; 第一槽的移相器; 以及形成在第一凹槽中的第二深槽的另一个移相器。
-
公开(公告)号:US5082695A
公开(公告)日:1992-01-21
申请号:US314794
申请日:1989-02-24
申请人: Masao Yamada , Masafumi Nakaishi , Kenji Nakagawa , Yuji Furumura , Takashi Eshita , Fumitake Mieno
发明人: Masao Yamada , Masafumi Nakaishi , Kenji Nakagawa , Yuji Furumura , Takashi Eshita , Fumitake Mieno
IPC分类号: G03F1/22
CPC分类号: G03F1/22
摘要: A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.
-
-
-
-
-
-
-
-
-