摘要:
The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要:
The present invention provides a method and apparatus for delivering one or more process gases and one or more cleaning gases into one or more processing regions. The gas distribution system includes a gas inlet and a gas conduit, each disposed to deliver one or more gases into the chamber via a desired diffusing passage. Also, a gas delivery method and apparatus for splitting a gas feed into multiple feed lines is provided having a gas filter disposed upstream from a splitting coupling disposed in the line.
摘要:
A front end staging method and apparatus is provided to introduce and remove a set of wafers from a vacuum processing system. The system generally comprises a support platform, one or more wafer cassette turntables disposed on the platform, a wafer handler disposed adjacent the turntables, a wafer center finding device and a filter disposed to control particles in the vicinity of the wafers. The wafer cassette turntables are rotatably mounted to the support in the preferred embodiment. The processing system may also include one or more processing chambers, where each processing chamber defines a plurality of isolated processing regions therein. The wafer center finding device may include an optical sensor system including optimal emitters aligned with optical sensors.
摘要:
The present invention provides a remote plasma source mountable on a process chamber and connectable on one end to a gas inletting system and on the other end to a gas distribution system disposed in a process chamber. Preferably, a conventional microwave generator is utilized to deliver microwaves into a remote chamber to excite a gas passed therethrough into an excited state.
摘要:
The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要:
The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要:
A method and apparatus for exhausting gases out of multiple processing regions is provided and generally comprises first and second pumping channels disposed in first and second processing regions and connected to a pump via a common exhaust port.
摘要:
The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
摘要:
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
摘要:
A non-conductive dome-shaped portion having a plurality of different radii as a dielectric inductive coupling wall of a reactor chamber. The non-conductive dome-shaped portion having a plurality of different radii being adapted to be positioned in close underlying relationship to a coil antenna and transmissive of RF energy inductively coupled into the chamber from the coil.