公开(公告)号：US07851927B2

公开(公告)日：2010-12-14

申请号：US11619350

申请日：2007-01-03

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

IPC分类号： H01L21/28

CPC分类号： H01L24/84 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor component (1) has a semiconductor chip (5) and a semiconductor component carrier (3) with external connection strips (12, 13, 15). The semiconductor chip (5) has a first electrode (6) and a control electrode (7) on its top side (8) and a second electrode (9) on its rear side (10). The semiconductor chip (5) is fixed by its top side (8) in flip-chip arrangement (11) on a first and a second external connection strip (12, 13) for the first electrode (6) and the control electrode (7). The second electrode (9) is electrically connected to at least one third external connection strip (15) via a bonding tape (14).

摘要翻译： 半导体部件（1）具有半导体芯片（5）和具有外部连接条（12,13,15）的半导体部件载体（3）。 半导体芯片（5）在其顶侧（8）上具有第一电极（6）和控制电极（7），在其后侧具有第二电极（9）。 半导体芯片（5）在第一和第二外部连接条（12,13）上用倒装芯片布置（11）的顶侧（8）固定，用于第一电极（6）和控制电极（7） ）。 第二电极（9）通过粘合带（14）电连接到至少一个第三外部连接条（15）。

公开(公告)号：US07728415B2

公开(公告)日：2010-06-01

申请号：US11955710

申请日：2007-12-13

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Joachim Mahler ,  Xaver Schloegel ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Joachim Mahler ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L27/088

CPC分类号： H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L25/117 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.

摘要翻译： 使用具有表面可安装外部触点的引线技术的功率半导体元件堆叠包括至少两个MOSFET功率半导体元件，每个MOSFET功率半导体元件具有顶侧和下侧。 下侧包括：漏极外部接触区域，源极外部接触区域和栅极外部接触区域。 顶侧包括至少一个源极外部接触区域和栅极外部接触区域。 上侧和下侧的栅极外部接触区域彼此电连接。 功率半导体元件堆叠是在塑料外壳组合物中一个在另一个之上布置的MOSFET功率半导体元件的串联电路或并联电路。

公开(公告)号：US20080146010A1

公开(公告)日：2008-06-19

申请号：US11619350

申请日：2007-01-03

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Klaus Schiess

IPC分类号： H01L21/28

CPC分类号： H01L24/84 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/3754 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/8382 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor component (1) has a semiconductor chip (5) and a semiconductor component carrier (3) with external connection strips (12, 13, 15). The semiconductor chip (5) has a first electrode (6) and a control electrode (7) on its top side (8) and a second electrode (9) on its rear side (10). The semiconductor chip (5) is fixed by its top side (8) in flip-chip arrangement (11) on a first and a second external connection strip (12, 13) for the first electrode (6) and the control electrode (7). The second electrode (9) is electrically connected to at least one third external connection strip (15) via a bonding tape (14).

摘要翻译： 半导体部件（1）具有半导体芯片（5）和具有外部连接条（12,13,15）的半导体部件载体（3）。 半导体芯片（5）在其顶侧（8）上具有第一电极（6）和控制电极（7），在其后侧具有第二电极（9）。 半导体芯片（5）在第一和第二外部连接条（12,13）上用倒装芯片布置（11）的顶侧（8）固定，用于第一电极（6）和控制电极（7） ）。 第二电极（9）经由粘合带（14）电连接到至少一个第三外部连接条（15）。

公开(公告)号：US20080150105A1

公开(公告)日：2008-06-26

申请号：US11955710

申请日：2007-12-13

申请人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Joachim Mahler ,  Xaver Schloegel ,  Klaus Schiess

发明人： Khalil Hosseini ,  Alexander Koenigsberger ,  Ralf Otremba ,  Joachim Mahler ,  Xaver Schloegel ,  Klaus Schiess

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L25/117 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.

摘要翻译： 使用具有表面可安装外部触点的引线技术的功率半导体元件堆叠包括至少两个MOSFET功率半导体元件，每个MOSFET功率半导体元件具有顶侧和下侧。 下侧包括：漏极外部接触区域，源极外部接触区域和栅极外部接触区域。 顶侧包括至少一个源极外部接触区域和栅极外部接触区域。 上侧和下侧的栅极外部接触区域彼此电连接。 功率半导体元件堆叠是在塑料外壳组合物中一个在另一个之上布置的MOSFET功率半导体元件的串联电路或并联电路。

公开(公告)号：US20060237814A1

公开(公告)日：2006-10-26

申请号：US11370441

申请日：2006-03-08

申请人： Khalil Hosseini ,  Alexander Koenigsberger

发明人： Khalil Hosseini ,  Alexander Koenigsberger

IPC分类号： H01L23/58

CPC分类号： H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/84 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83825 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device having surface-mountable external contact areas and a method for producing the same is disclosed. The surface-mountable external contacts are arranged as flat external contacts on the underside of the semiconductor device. In one embodiment, the semiconductor chip of the semiconductor device has a source contact area and a gate contact area on its top side and a drain contact area on its rear side. The source contact area is fixed on a cutout of a heat sink, which is connected to a source external contact, a top side of the heat sink partly forming the top side of the semiconductor device. The drain contact area is electrically connected to a drain external contact and the gate contact area is electrically connected via a connecting element to a gate external contact on the underside of the semiconductor device. Consequently, the semiconductor device as areas which dissipate the heat loss both on the underside and on the top side.

公开(公告)号：US07745913B2

公开(公告)日：2010-06-29

申请号：US11694516

申请日：2007-03-30

申请人： Khalil Hosseini ,  Alexander Koenigsberger

发明人： Khalil Hosseini ,  Alexander Koenigsberger

IPC分类号： H01L23/495

CPC分类号： H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/48 ,  H01L2224/0603 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor component includes at least one power semiconductor chip and surface-mountable external contacts. The power semiconductor chip includes large-area contact areas on its top side and its rear side, which cover essentially the entire top side and rear side, respectively. The top side also includes, alongside the large-area contact area, a small-area contact area; the areal extent of the small-area contact is at least ten times smaller than the areal extent of the large-area contact areas. The small-area contact area is connected to an individual external contact of the power semiconductor component via a bonding wire connection. The large-area contact area of the top side is connected to external contacts via a bonding tape.

摘要翻译： 功率半导体部件包括至少一个功率半导体芯片和可表面安装的外部触点。 功率半导体芯片在其顶侧和后侧分别包括大面积的接触区域，其基本上覆盖整个顶侧和后侧。 顶部还包括与大面积接触区域一起的小面积接触面积; 小面积接触面积的面积比大面积接触面积的面积至少要小十倍。 小区域接触区域通过接合线连接连接到功率半导体部件的单个外部接触。 上侧的大面积接触区域通过粘接带与外部触点相连。

公开(公告)号：US07579675B2

公开(公告)日：2009-08-25

申请号：US11370441

申请日：2006-03-08

申请人： Khalil Hosseini ,  Alexander Koenigsberger

发明人： Khalil Hosseini ,  Alexander Koenigsberger

IPC分类号： H01L23/495 ,  H01L23/10

CPC分类号： H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/84 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83825 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device having surface-mountable external contact areas and a method for producing the same is disclosed. The surface-mountable external contacts are arranged as flat external contacts on the underside of the semiconductor device. In one embodiment, the semiconductor chip of the semiconductor device has a source contact area and a gate contact area on its top side and a drain contact area on its rear side. The source contact area is fixed on a cutout of a heat sink, which is connected to a source external contact, a top side of the heat sink partly forming the top side of the semiconductor device. The drain contact area is electrically connected to a drain external contact and the gate contact area is electrically connected via a connecting element to a gate external contact on the underside of the semiconductor device. Consequently, the semiconductor device as areas which dissipate the heat loss both on the underside and on the top side.

摘要翻译： 公开了一种具有可表面安装的外部接触区域的半导体器件及其制造方法。 表面安装的外部触头在半导体器件的下侧上被布置为平坦的外部触头。 在一个实施例中，半导体器件的半导体芯片具有源极接触区域和其顶侧上的栅极接触区域及其后侧上的漏极接触区域。 源极接触区域固定在散热器的切口上，散热器的切口连接到源外部接触件，散热器的顶侧部分地形成半导体器件的顶侧。 漏极接触区域电连接到漏极外部接触，并且栅极接触区域经由连接元件电连接到半导体器件的下侧上的栅极外部接触。 因此，半导体器件作为在下侧和顶侧消散热损失的区域。

公开(公告)号：US20070228556A1

公开(公告)日：2007-10-04

申请号：US11694516

申请日：2007-03-30

申请人： Khalil Hosseini ,  Alexander Koenigsberger

发明人： Khalil Hosseini ,  Alexander Koenigsberger

IPC分类号： H01L23/48

CPC分类号： H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/48 ,  H01L2224/0603 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor component includes at least one power semiconductor chip and surface-mountable external contacts. The power semiconductor chip includes large-area contact areas on its top side and its rear side, which cover essentially the entire top side and rear side, respectively. The top side also includes, alongside the large-area contact area, a small-area contact area; the areal extent of the small-area contact is at least ten times smaller than the areal extent of the large-area contact areas. The small-area contact area is connected to an individual external contact of the power semiconductor component via a bonding wire connection. The large-area contact area of the top side is connected to external contacts via a bonding tape.

摘要翻译： 功率半导体部件包括至少一个功率半导体芯片和可表面安装的外部触点。 功率半导体芯片在其顶侧和后侧分别包括大面积的接触区域，其基本上覆盖整个顶侧和后侧。 顶部还包括与大面积接触区域一起的小面积接触面积; 小面积接触面积的面积比大面积接触面积的面积至少要小十倍。 小区域接触区域通过接合线连接连接到功率半导体部件的单个外部接触。 上侧的大面积接触区域通过粘接带与外部触点相连。

公开(公告)号：US08610274B2

公开(公告)日：2013-12-17

申请号：US12881257

申请日：2010-09-14

申请人： Khalil Hosseini ,  Frank Kahlmann ,  Josef Hoeglauer ,  Ralf Otremba ,  Georg Meyer-Berg

发明人： Khalil Hosseini ,  Frank Kahlmann ,  Josef Hoeglauer ,  Ralf Otremba ,  Georg Meyer-Berg

IPC分类号： H01L23/48

CPC分类号： H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48847 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A die structure includes a die and a metallization layer disposed over the front side of the die. The metallization layer includes copper. At least a part of the metallization layer has a rough surface profile. The part with the rough surface profile includes a wire bonding region, to which a wire bonding structure is to be bonded.

摘要翻译： 模具结构包括模具和设置在模具的前侧上的金属化层。 金属化层包括铜。 金属化层的至少一部分具有粗糙的表面轮廓。 具有粗糙表面轮廓的部分包括引线接合区域，引线接合结构将被接合到该引线接合区域。

公开(公告)号：US20060118815A1

公开(公告)日：2006-06-08

申请号：US11235474

申请日：2005-09-26

申请人： Ralf Otremba ,  Khalil Hosseini

发明人： Ralf Otremba ,  Khalil Hosseini

IPC分类号： H01L31/111

CPC分类号： H01L23/49562 ,  H01L23/4952 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/37599 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2224/37099

摘要： A power semiconductor device is disclosed. In one embodiment, the power semiconductor device includes a plurality of device components that are contact-connected by bonding wires having different thicknesses. The surface of at least one bonding wire serves as a contact area for at least one further bonding wire, the bonding wire that serves as contact area being thicker than the bonding wire contact-connected thereon.