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19 条记录 (耗时 0.019 秒)

    Electrodes for ferroelectric components
    2.
    发明授权
    Electrodes for ferroelectric components 失效
    铁电元件电极

    公开(公告)号：US06713799B2

    公开(公告)日：2004-03-30

    申请号：US10133516

    申请日：2002-04-26

    申请人： Kiyoshi Uchiyama ,  Keisuke Tanaka

    发明人： Kiyoshi Uchiyama ,  Keisuke Tanaka

    IPC分类号： H01L2708

    CPC分类号： H01L28/55 ,  H01L21/2855 ,  H01L28/60

    摘要： A ferroelectric integrated circuit including a substrate supporting a thin film ferroelectric material and an electrode layer in contact with the ferroelectric material, the ferroelectric material comprising a compound including a metal element, the electrode comprising the metal element. The metal element of the ferroelectric material may exist in the electrode in the pure metal form, as an alloy, as part of a crystalline compound, or as part of an amorphous material. The electrodes may be formed by a single layer, or as multi-layer structures, providing the layer adjacent the ferroelectric contains at least one of the metal elements of the ferroelectric. The electrode is formed at the eutectic temperature of its constants.

    摘要翻译： 一种铁电集成电路，包括支撑薄膜铁电体材料的基板和与铁电体材料接触的电极层，所述铁电体材料包括包含金属元素的化合物，所述电极包括所述金属元素。 铁电材料的金属元素可以以纯金属形式存在于电极中，作为合金，作为结晶化合物的一部分，或作为无定形材料的一部分存在。 电极可以由单层形成，或者作为多层结构，提供与铁电体相邻的层包含铁电体的至少一种金属元素。 电极以其常数的共晶温度形成。

    Tunneling transistor applicable to nonvolatile memory
    3.
    发明授权
    Tunneling transistor applicable to nonvolatile memory 失效
    隧道晶体管适用于非易失性存储器

    公开(公告)号：US06351004B1

    公开(公告)日：2002-02-26

    申请号：US09688494

    申请日：2000-10-16

    申请人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

    发明人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

    IPC分类号： H01L2978

    CPC分类号： H01L29/6684 ,  H01L21/28291 ,  H01L29/772 ,  H01L29/78391

    摘要： A tunneling transistor is provided as an effective means for miniaturization of a semiconductor integrated circuit having nonvolatile memory. An insulating layer is disposed on a silicon substrate. A source and a drain are disposed on the insulating layer, with an insulator of a few nanometers in thickness that provides a tunnel barrier being interposed between the source and the drain. A ferroelectric layer that exhibits spontaneous polarization is disposed directly above a region of the source that is adjacent to the insulator. With this construction, when the ferroelectric layer is polarized in a predetermined direction, at least a portion of the region of the source adjacent to the insulator forms a depletion region, with it being possible to vary the amount of current tunneling through the insulator depending on whether the ferroelectric layer is polarized or not.

    摘要翻译： 提供隧道晶体管作为具有非易失性存储器的半导体集成电路的小型化的有效手段。 绝缘层设置在硅衬底上。 源极和漏极设置在绝缘层上，具有几纳米厚度的绝缘体，其提供了在源极和漏极之间插入的隧道势垒。 显示自发极化的铁电层直接设置在与绝缘体相邻的源极的正上方。 利用这种结构，当铁电层在预定方向上极化时，与绝缘体相邻的源极的区域的至少一部分形成耗尽区，根据该结构，可以改变通过绝缘体的电流隧穿量 铁电层是否极化。

    Semiconductor memory device, method for driving the same and method for fabricating the same
    5.
    发明授权
    Semiconductor memory device, method for driving the same and method for fabricating the same 失效
    半导体存储器件，其驱动方法及其制造方法

    公开(公告)号：US06580632B2

    公开(公告)日：2003-06-17

    申请号：US09782300

    申请日：2001-02-14

    申请人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

    发明人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

    IPC分类号： G11C1122

    CPC分类号： H01L29/516 ,  G11C11/22 ,  G11C11/223 ,  H01L29/78391

    摘要： Data is read out from a ferroelectric film with its remnant polarization associated with one of two possible logical states of the data and with a bias voltage applied to a control gate electrode over the ferroelectric film. The ferroelectric film creates either up or down remnant polarization. So the down remnant polarization may represent data “1” while the up or almost zero remnant polarization may represent data “0”, for example. By regarding the almost zero remnant polarization state as representing data “0”, a read current value becomes substantially constant in the data “0” state. As a result, the read accuracy improves. Also, if imprinting of one particular logical state (e.g., data “1”) is induced in advance, then the read accuracy further improves.

    摘要翻译： 从强电介质薄膜读​​出数据，其剩余极化与数据的两种可能的逻辑状态之一相关，并且施加到铁电体膜上的控制栅电极上的偏置电压。 铁电薄膜产生上或下残余极化。 因此，向下残留极化可以表示数据“1”，而上或近零残余极化例如可以表示数据“0”。 通过将几乎为零的残余极化状态作为表示数据“0”，读取的电流值在数据“0”状态下变得基本恒定。 结果，读取精度提高。 此外，如果预先诱导一个特定逻辑状态（例如，数据“1”）的印记，则读取精度进一步提高。

    System & Method for mixing and distributing air and steam in a gasifier
    7.
    发明申请
    System & Method for mixing and distributing air and steam in a gasifier 审中-公开
    在气化炉中混合和分配空气和蒸汽的系统和方法

    公开(公告)号：US20130025200A1

    公开(公告)日：2013-01-31

    申请号：US13136258

    申请日：2011-07-27

    申请人： Kiyoshi Uchiyama

    发明人： Kiyoshi Uchiyama

    IPC分类号： C10J3/72

    CPC分类号： C10J3/20 ,  C10J3/36 ,  C10J3/485 ,  C10J3/487 ,  C10J3/723 ,  C10J2200/156 ,  C10J2300/0916 ,  C10J2300/0956 ,  C10J2300/0976 ,  C10J2300/165 ,  C10J2300/1838 ,  C10J2300/1869 ,  C10J2300/1884 ,  C10J2300/1892 ,  C10K3/023 ,  Y02P20/129

    摘要： A gasifier system for converting biomass to biogas includes a reaction chamber with a biomass supply port for receiving a biomass volume, a waste outlet port for discharging biomass conversion by-products, a gas inlet for receiving heated oxidizing gas, a gas outlet for discharging generated biogas and a burner manifold for distributing oxidizing gas within the chamber to react the biomass. The burner manifold includes primary tubes and secondary tubes, positioned in a vertically lower part of the chamber and configured with multiple openings or ports for dispensing the oxidizing gas, where the secondary tubes extend into, inject and evenly distribute the oxidizing gas into the biomass volume to optimize conversion to biogas.

    摘要翻译： 用于将生物质转化为沼气的气化器系统包括具有用于接收生物量的生物质供应口的反应室，用于排放生物质转化副产物的废气出口，用于接收加热的氧化气体的气体入口， 沼气和燃烧器歧管，用于在室内分配氧化气体以使生物质反应。 燃烧器歧管包括初级管和次级管，定位在腔室的垂直下部，并配置有用于分配氧化气体的多个开口或端口，其中次级管延伸进入，注入并均匀分布氧化气体进入生物体积 以优化转化为沼气。

    Transferring apparatus operated in a vacuum chamber
    9.
    发明授权
    Transferring apparatus operated in a vacuum chamber 失效
    转移装置在真空室中操作

    公开(公告)号：US4998859A

    公开(公告)日：1991-03-12

    申请号：US246406

    申请日：1988-09-19

    申请人： Zinichiro Oshima ,  Kiyoshi Uchiyama ,  Ikuo Nanno

    发明人： Zinichiro Oshima ,  Kiyoshi Uchiyama ,  Ikuo Nanno

    IPC分类号： B25J21/00 ,  B65G49/00 ,  B65G49/07 ,  B65G54/02 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/67754 ,  Y10T29/53178 ,  Y10T29/53196 ,  Y10T29/53261

    摘要： A transferring apparatus comprises a vacuum chamber, a carrier member disposed inside a pipe which communicates with the vacuum chamber, magnetic means installed in a support structure which is moved by a driving means. The carrier member is floated and pulled in its axial direction by magnetic force produced by the magnetic means, whereby an object placed on the tip of a manipulator arm which is connected to the carrier member is transferred in the vacuum chamber. Since the carrier member is floated inside the pipe and moved in its axial direction without contact to the pipe or any other parts, there are no portions inside the pipe which relatively move in contact with each other, and thus fine particles are not generated inside the pipe. This effectively eliminates adhesion of fine particles to objects such as semiconductor devices being transferred in a vacuum chamber.

    摘要翻译： 传送装置包括真空室，设置在与真空室连通的管内的载体构件，安装在由驱动装置移动的支撑结构中的磁性装置。 载体构件通过由磁性装置产生的磁力在其轴向上浮起并拉动，由此将放置在连接到载体构件的操纵臂的尖端上的物体转移到真空室中。 由于载体构件在管内浮动而不与管或其它部分接触而在其轴向上移动，所以管内没有相对移动的部分彼此接触，因此在内部不会产生细小颗粒 管。 这有效地消除了细颗粒对诸如在真空室中转移的半导体器件的物体的粘附。