Semiconductor device and method of fabricating the same
    3.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07982254B2

    公开(公告)日:2011-07-19

    申请号:US11969019

    申请日:2008-01-03

    IPC分类号: H01L29/76

    摘要: A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.

    摘要翻译: 形成具有水/氢阻断功能的保护膜(56),以便在与焊盘电极电隔离的同时覆盖焊盘电极(54a)的外围。 用于构成保护膜的实施方案中选择的材料是具有显着优于绝缘材料(例如钯(Pd)或含钯材料)和铱(Ir)的防氢/阻氢功能的高度防潮材料 )或氧化铱(IrOx:通常为x = 2)或含铱或氧化铱的材料。 可以通过简单的结构实现能够可靠地防止水/氢进入内部并且保持铁电电容器结构(30)的高性能的FeRAM。