Multi-chip integrated circuit module
    3.
    发明授权
    Multi-chip integrated circuit module 失效
    多芯片集成电路模块

    公开(公告)号:US06400573B1

    公开(公告)日:2002-06-04

    申请号:US08960994

    申请日:1997-10-30

    IPC分类号: H05K720

    摘要: A multi-chip integrated circuit module includes a supporting layer of laminate material over which a high-density interconnect structure is formed. The laminate layer includes a first upper laminate layer (10) having a hole (14) disposed therein for receiving an integrated circuit chip die (56). A lower core laminate layer (16) having a conductive layer (18) and conductive layer (20) disposed on opposite sides thereof is laminated to the lower surface of the layer (10). Plated-through holes (36), (38) and (40) are formed through the two layers (10) and (16) to connect the conductive layer (20) with a conductive layer (12) on the upper surface of the layer (10). A high-density interconnect layer includes two laminate layers (126) and (138), each having vias formed therethrough and via interconnect structures disposed on the surfaces thereof. The via interconnect structures in the layer (126) allow for connections from the die (56) to the conductive layer (12). The via interconnect structures formed in the layer (138) allow interconnection from the upper surface of layer (138) to via interconnects formed in the layer (126). An I/O connector is interfaced with select ones of the plated-through holes with pins (162) and (164). This allows an interface from the module to an operating system through pins (166).

    摘要翻译: 多芯片集成电路模块包括层叠材料的支撑层,在其上形成高密度互连结构。 层压层包括第一上层叠层(10),其具有设置在其中的用于接收集成电路芯片模具(56)的孔(14)。 具有导电层(18)和设置在其相对侧上的导电层(20)的下芯层压层(16)被层压到层(10)的下表面。 通过两层(10)和(16)形成电镀通孔(36),(38)和(40),以将导电层(20)与层的上表面上的导电层(12)连接 (10)。 高密度互连层包括两个层压层(126)和(138),每个层叠层(126)和(138)各自具有穿过其中形成的通孔,并且经由布置在其表面上的互连结构。 层(126)中的通孔互连结构允许从管芯(56)到导电层(12)的连接。 形成在层(138)中的通孔互连结构允许从层(138)的上表面到在层(126)中形成的通孔互连的互连。 I / O连接器与选择的具有引脚(162)和(164)的电镀通孔相连接。 这允许通过引脚(166)从模块到操作系统的接口。