公开(公告)号：US20070170446A1

公开(公告)日：2007-07-26

申请号：US11534867

申请日：2006-09-25

申请人： Kyung Sang CHO ,  Byung Ki Kim ,  Byoung Lyong CHOI ,  Soon Jae KWON

发明人： Kyung Sang CHO ,  Byung Ki Kim ,  Byoung Lyong CHOI ,  Soon Jae KWON

IPC分类号： H01L33/00

CPC分类号： C09K11/883 ,  C09K11/565 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/26 ,  H05B33/14

摘要： Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.

摘要翻译： 公开了一种无机电致发光二极管及其制造方法。 具体地说，本发明提供了一种无机电致发光二极管，其包括由无机材料形成的半导体纳米晶层，使用无定形无机材料形成在半导体纳米晶层上的电子传输层或空穴传输层，以及空穴传输层或电子传输 使用无机材料形成在半导体纳米晶层之下的层，并且还提供制造这种无机电致发光二极管的方法。 根据制造本发明的无机电致发光二极管的方法，可以制造无机电致发光二极管，同时保持半导体晶体层的发光半导体材料的性质，以及稳定操作且具有高发光效率的无机电致发光二极管 可以提供。

公开(公告)号：US20110101303A1

公开(公告)日：2011-05-05

申请号：US12985873

申请日：2011-01-06

申请人： Byoung Lyong CHOI ,  Byung Ki KIM ,  Kyung Sang CHO ,  Soon Jae KWON ,  Jae Young CHOI

发明人： Byoung Lyong CHOI ,  Byung Ki KIM ,  Kyung Sang CHO ,  Soon Jae KWON ,  Jae Young CHOI

IPC分类号： H01L33/06 ,  H01L33/00

CPC分类号： H01L51/5012 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/08 ,  H01L33/18

摘要： A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

摘要翻译： 提供了包括半导体纳米晶层的发光器件和用于制造发光器件的方法。 发光器件包括其填充有填充材料的空隙的半导体纳米晶体层。 根据发光装置，由于在半导体纳米晶层的纳米晶粒之间形成的空隙填充有填充材料，所以通过空隙的电流泄漏的发生被最小化，这使得器件具有延长的使用寿命，高发光度 效率和稳定性的提高。

公开(公告)号：US20080238299A1

公开(公告)日：2008-10-02

申请号：US12017677

申请日：2008-01-22

申请人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Soon Jae KWON

发明人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Soon Jae KWON

IPC分类号： H01J1/62

CPC分类号： H05B33/14 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/3209 ,  H01L51/5012 ,  H01L51/5278

摘要： A nanodot electroluminescent diode is disclosed. The nanodot electroluminescent diode comprises a lower electrode, an upper electrode, and unit cells interposed between the electrodes, wherein the unit cells comprise a quantum dot electroluminescent layer and also include an organic layer and/or an inorganic layer in addition to the quantum dot electroluminescent layer. The disclosed nanodot electroluminescent diode provides high efficiency, stability, and high luminance, and mixed colors, multi-colors, full color, and white electroluminescence can be obtained.

摘要翻译： 公开了纳米点电致发光二极管。 纳米点电致发光二极管包括下电极，上电极和介于电极之间的单位电池，其中，单元电池包括量子点电致发光层，并且除量子点电致发光之外还包括有机层和/或无机层 层。 所公开的纳米点电致发光二极管提供高效率，稳定性和高亮度，并且可以获得混合颜色，多色，全色和白色电致发光。

公开(公告)号：US20100327258A1

公开(公告)日：2010-12-30

申请号：US11932953

申请日：2007-10-31

申请人： Eun Kyung LEE ,  Jai Yong HAN ,  Byoung Lyong CHOI ,  Kyung Sang CHO

发明人： Eun Kyung LEE ,  Jai Yong HAN ,  Byoung Lyong CHOI ,  Kyung Sang CHO

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L33/08 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02B2207/101 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02642 ,  H01L33/0012 ,  H01L33/24 ,  H01L33/507 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/936

摘要： Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

摘要翻译： 公开了一种生产核 - 壳纳米线的方法，其中绝缘膜预先被图案化以阻挡纳米线芯和纳米线壳之间的接触。 根据该方法，可以以简单的方式生产其密度和位置可控制的核 - 壳纳米线。 进一步公开的是通过该方法生产的纳米线和包含纳米线的纳米线器件。 纳米线的使用导致器件的发光/接收面积的增加。 因此，该装置表现出高的亮度/效率特性。

公开(公告)号：US20080150425A1

公开(公告)日：2008-06-26

申请号：US11753129

申请日：2007-05-24

申请人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

发明人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

IPC分类号： H01J1/62 ,  H01J9/02

CPC分类号： H05B33/22

摘要： Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.

摘要翻译： 公开了一种无机电致发光器件。 无机电致发光器件包括顺序形成在空穴注入电极上的空穴传输层，发光层，无机电子传输层和电子注入电极，其中在电子注入电极和无机电子传输层之间形成绝缘层 。 进一步公开的是制造电致发光器件的方法和包括电致发光器件的电子器件。 无机电致发光器件实现了来自器件的整个发光表面的均匀发光，从而提高了器件的可靠性和稳定性。 无机电致发光器件适用于电子设备的制造，包括显示设备，照明器和背光单元。

公开(公告)号：US20100108984A1

公开(公告)日：2010-05-06

申请号：US12534226

申请日：2009-08-03

申请人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Eun Kyung LEE

发明人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Eun Kyung LEE

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H05B33/14 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  H01L51/5048

摘要： A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

摘要翻译： 一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的 电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层 量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布 不同于第二表面的有机配体分布。

公开(公告)号：US20090008628A1

公开(公告)日：2009-01-08

申请号：US12031287

申请日：2008-02-14

申请人： Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

发明人： Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

IPC分类号： H01L33/00 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

摘要翻译： 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

公开(公告)号：US20090009057A1

公开(公告)日：2009-01-08

申请号：US12032252

申请日：2008-02-15

申请人： Eun Kyung LEE ,  Jong Min KIM ,  Byoung Lyong CHOI ,  Kyung Sang CHO

发明人： Eun Kyung LEE ,  Jong Min KIM ,  Byoung Lyong CHOI ,  Kyung Sang CHO

IPC分类号： H01J1/63 ,  H01L31/0336

CPC分类号： H05B33/22

摘要： Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an electron injection electrode, wherein a light-emitting surface of the device has a periodical projection structure.

摘要翻译： 本发明公开了一种量子点光学装置，包括：基板; 空穴注入电极; 空穴传输层; 量子点发光层; 电子传输层; 和电子注入电极，其中该器件的发光表面具有周期性的投影结构。

公开(公告)号：US20090053126A1

公开(公告)日：2009-02-26

申请号：US11931991

申请日：2007-10-31

申请人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

发明人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

IPC分类号： H01L21/20 ,  C01B33/023

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/033 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665

摘要： A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis.

摘要翻译： 提供了大量生产纳米结构的方法。 该方法包括将金属催化剂纳米颗粒引入中孔模板的多个均匀尺寸的孔中，以三维方式分布含有金属催化剂纳米颗粒的模板，并将纳米线源引入模板的孔中以将纳米线源生长成 沿着毛孔长度的纳米线。 还提供了通过该方法制备的纳米结构。 纳米结构具有均匀的厚度。 此外，纳米结构可以具有各种形状并且可以被可控地掺杂。 纳米结构可以应用于各种设备，包括电子设备，例如用于各种应用的场效应晶体管（FET）和发光二极管（LED），光电探测器，纳米分析仪和高灵敏度信号检测器， 癌症诊断。

公开(公告)号：US20100144126A1

公开(公告)日：2010-06-10

申请号：US12708007

申请日：2010-02-18

申请人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

发明人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

IPC分类号： H01L21/203

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

摘要翻译： 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。