公开(公告)号：US06222206B1

公开(公告)日：2001-04-24

申请号：US09105573

申请日：1998-06-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L3300

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US06485996B2

公开(公告)日：2002-11-26

申请号：US09769024

申请日：2001-01-25

申请人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Chirovsky ,  John Edward Cunningham ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L2715

CPC分类号： H01S5/18305 ,  H01L27/156 ,  H01S5/0201 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

摘要： A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.

摘要翻译： 描述了一种用于确定在晶片上形成的衬底侧发射VCSEL的性能的技术。 该技术涉及在与底部发射VCSEL相同的晶片上形成顶部发射VCSEL，然后测试顶部发射VCSEL并使用结果来确定晶片的底部发射VCSEL的性能。

公开(公告)号：US06169756A

公开(公告)日：2001-01-02

申请号：US08997710

申请日：1997-12-23

申请人： Leo Maria Chirovsky ,  Lucian Arthur D'Asaro ,  William Scott Hobson ,  Sanghee Park Hui ,  Ronald Eugene Leibenguth ,  Betty Jyue Tseng ,  James Dennis Wynn ,  George John Zydzik

发明人： Leo Maria Chirovsky ,  Lucian Arthur D'Asaro ,  William Scott Hobson ,  Sanghee Park Hui ,  Ronald Eugene Leibenguth ,  Betty Jyue Tseng ,  James Dennis Wynn ,  George John Zydzik

IPC分类号： H01S5187

CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2063

摘要： A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.

摘要翻译： VCSEL包括分别提供独特形式的驱动电流和横向限制的独立电流和光导。 在一个实施例中，光导包括横向于空腔谐振器轴的腔内高折射率台面和覆盖台面的多层电介质（即非外延）镜。 在另一个实施例中，电流引导件包括横向包围台面但具有大于离子注入限定电流孔径的内径的环形第一电极。 当前的引导件导致电流沿着基本上垂直于谐振器轴线的第一路径段从第一电极横向流动，然后沿着基本上平行于该轴线的第二路径段从第一段垂直流动，最后通过电流孔径 有源区到第二电极。 只有在形成引导件之后才沉积电介质镜，以便于它们的制造。

公开(公告)号：US5918794A

公开(公告)日：1999-07-06

申请号：US581299

申请日：1995-12-28

申请人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng ,  James Albert Walker

发明人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty Jyue Tseng ,  James Albert Walker

IPC分类号： B23K20/00 ,  B23K20/08 ,  B23K35/14 ,  H01L21/60 ,  H01L21/603 ,  H01L23/485 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H05K3/34 ,  B23K1/19

CPC分类号： H01L24/10 ,  B23K20/085 ,  H01L24/02 ,  H01L24/13 ,  B23K2201/40 ,  H01L2224/0401 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19042

摘要： Each microminiature contact pad included in a dense array of pads on an electronic component contains a relatively thick layer of solder. The layer is treated to form a relatively thin brittle protective layer on the surface of the solder. The structure is then brought into contact with a contact pad in a mating array of pads on another component in a thermo-compression bonding step carried out below the melting point of the solder. In that step, the brittle layer is fractured. As a result, solid-state diffusion of conductive material occurs through fissures in the fractured layer, thereby to provide an electrical connection between mating pads on the two components.

摘要翻译： 包含在电子部件上的密集的焊盘阵列中的每个微型接触焊盘包含相对厚的焊料层。 处理该层以在焊料的表面上形成相对薄的脆性保护层。 然后将该结构与在焊料的熔点之下进行的热压接步骤中在另一部件上的焊盘的配合阵列中的接触焊盘接触。 在该步骤中，脆性层断裂。 结果，导电材料的固态扩散通过断裂层中的裂缝发生，从而在两个部件上的匹配焊盘之间提供电连接。

公开(公告)号：US5667132A

公开(公告)日：1997-09-16

申请号：US633992

申请日：1996-04-19

申请人： Leo Maria Freishyn Chirovsky ,  Lucian Arthur D'Asaro ,  Donald William Dahringer ,  Sanghee Park Hui ,  Betty Jyue Tseng

发明人： Leo Maria Freishyn Chirovsky ,  Lucian Arthur D'Asaro ,  Donald William Dahringer ,  Sanghee Park Hui ,  Betty Jyue Tseng

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L21/98 ,  H01L23/485 ,  H01L25/16 ,  H05K3/32

CPC分类号： H05K3/328 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/75988 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H05K2201/10734 ,  H05K2203/0195

摘要： Solder bonding of first and second contact pad arrays is accomplished by forming contact structures, such as posts with vertical or tapered sides, on the contact pads of the first array and solder bumps on the second array. The respective contact structures should have an average cross-sectional area that is less than the average cross-sectional area of the corresponding solder bumps. The contact structures and solder bumps are then bonded by a bonding process at a temperature and pressure where the solder bumps deform and envelop at least a portion of the respective contact structures. It is possible to employ the contact structures as a compression stop during the bonding process. The temperature should be below the melting points of the contact structures. In this manner, solder bump spreading can be reduced during bonding which correspondingly reduces electrical shorting of adjacent formed interconnect bonds.

摘要翻译： 第一和第二接触焊盘阵列的焊接通过在第一阵列的接触焊盘和第二阵列上的焊料凸块上形成接触结构，例如具有垂直或锥形边的柱。 相应的接触结构应具有小于相应焊料凸块的平均横截面面积的平均横截面积。 接触结构和焊料凸块然后通过焊接工艺在温度和压力下接合，其中焊料凸块变形并且包围各个接触结构的至少一部分。 在接合过程中可以采用接触结构作为压缩停止。 温度应低于接触结构的熔点。 以这种方式，在焊接期间可以减少焊料凸块的扩展，这相应地减少了相邻形成的互连结的电短路。

公开(公告)号：US06208680B1

公开(公告)日：2001-03-27

申请号：US08997711

申请日：1997-12-23

申请人： Leo Maria Chirovsky ,  Sanghee Park Hui ,  George John Zydzik

发明人： Leo Maria Chirovsky ,  Sanghee Park Hui ,  George John Zydzik

IPC分类号： H01S5187

CPC分类号： H01S5/18369 ,  H01S5/0207 ,  H01S5/18308 ,  H01S5/18341

摘要： In a multi-layered dielectric mirror the higher refractive index layers comprise ZnS and the lower refractive index layers comprise a composite of approximately 95%MgF2 and 5%CaF2 by mole fraction. In one embodiment, the fluoride layers are e-beam deposited from an essentially eutectic melt of the two fluorides. In another embodiment, the semiconductor surface on which the mirror is formed is protected by an aluminum borosilicate glass layer. Application of the invention to the design and fabrication of VCSELs is also described.

摘要翻译： 在多层电介质镜中，较高的折射率层包含ZnS，较低的折射率层包含约95％MgF 2和5％CaF 2的摩尔分数的复合物。 在一个实施方案中，氟化物层由两种氟化物的基本上共熔的熔体电子束沉积。 在另一个实施例中，其上形成有反射镜的半导体表面由硼硅酸铝玻璃层保护。 还描述了本发明在VCSEL的设计和制造中的应用。

公开(公告)号：US6048751A

公开(公告)日：2000-04-11

申请号：US572275

申请日：1995-12-13

申请人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

发明人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

IPC分类号： H01L25/16 ,  H01L31/12 ,  H01L21/54 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L25/167 ,  H01L31/125 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10253

摘要： An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

摘要翻译： 由两个制造的半导体器件形成集成半导体器件，每个半导体器件通过将所制造的半导体器件中的一个的导体连接到另一个制造的半导体器件的导体而在一个半导体器件的衬底上放置抗蚀剂而具有衬底 使未固化的水泥（例如环氧树脂）在抗蚀剂和另一个基底之间流动，从而允许水泥固化，并从半导体器件中的一个去除衬底。 更具体地说，混合半导体器件由GaAs / AlGaAs多量子阱调制器形成，该GaAs / AlGaAs多量子阱调制器具有衬底和具有衬底的IC芯片，通过在调制器衬底上放置蚀刻抗蚀剂，将调制器的导体与芯片的导体 在调制器和芯片之间吸收未固化的环氧树脂，允许环氧树脂固化，并从调制器中除去衬底。

公开(公告)号：US06444491B1

公开(公告)日：2002-09-03

申请号：US09547122

申请日：2000-04-11

申请人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

发明人： Lucian Arthur D'Asaro ,  Keith Wayne Goossen ,  Sanghee Park Hui ,  Betty J. Tseng ,  James Albert Walker

IPC分类号： H01L2144

CPC分类号： H01L25/167 ,  H01L31/125 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/0401

摘要： An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

摘要翻译： 由两个制造的半导体器件形成集成半导体器件，每个半导体器件通过将所制造的半导体器件中的一个的导体连接到另一个制造的半导体器件的导体而在一个半导体器件的衬底上放置抗蚀剂而具有衬底 使未固化的水泥（例如环氧树脂）在抗蚀剂和另一个基底之间流动，从而允许水泥固化，并从半导体器件中的一个去除衬底。 更具体地说，混合半导体器件由GaAs / AlGaAs多量子阱调制器形成，该GaAs / AlGaAs多量子阱调制器具有衬底和具有衬底的IC芯片，通过在调制器衬底上放置蚀刻抗蚀剂，将调制器的导体与芯片的导体 在调制器和芯片之间吸收未固化的环氧树脂，允许环氧树脂固化，并从调制器中除去衬底。

公开(公告)号：US06187653B1

公开(公告)日：2001-02-13

申请号：US09465884

申请日：1999-12-17

申请人： Sanghee Park Hui ,  Barry Franklin Levine ,  Christopher James Pinzone ,  Gordon Albert Thomas

发明人： Sanghee Park Hui ,  Barry Franklin Levine ,  Christopher James Pinzone ,  Gordon Albert Thomas

IPC分类号： H01L2130

CPC分类号： H01L31/1075 ,  H01L21/187 ,  Y10S438/938

摘要： A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are placed in physical contact with each other. A flexible membrane is placed in physical contact with a surface of one of the substrates. Pneumatic force is applied to the flexible membrane. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals' forces between the two surfaces. The bulk of one of the substrates is then typically removed. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.

摘要翻译： 公开了一种用于器件制造的方法，其中具有不同晶格的两个衬底结合在一起。 在该过程中，衬底表面彼此物理接触。 将柔性膜放置成与其中一个基板的表面物理接触。 气动力被施加到柔性膜上。 选择接触的持续时间和接触压力，以便于由两个表面之间的有吸引力的范德华力引起的两个基板表面之间的接合。 然后通常去除其中一个底物的大部分。 然后，将接合面加热至高温，进行永久接合。

公开(公告)号：US6136667A

公开(公告)日：2000-10-24

申请号：US369682

申请日：1999-08-05

申请人： Sanghee Park Hui ,  Barry Franklin Levine ,  Christopher James Pinzone ,  Gordon Albert Thomas

发明人： Sanghee Park Hui ,  Barry Franklin Levine ,  Christopher James Pinzone ,  Gordon Albert Thomas

IPC分类号： H01L21/18 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L21/187 ,  H01L31/18 ,  Y10S438/977

摘要： A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are thoroughly cleaned and placed in physical contact with each other. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals' forces between the two surfaces. The bonded substrates are heated to a moderate temperature to effect escape of gases which may be entrapped by the substrates. The bulk of one of the substrates is then typically removed. The substrates can be heated again to a moderate temperature to effect removal of any gases remaining entrapped on the substrates. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.

摘要翻译： 公开了一种用于器件制造的方法，其中具有不同晶格的两个衬底结合在一起。 在此过程中，基材表面被彻底清洁并相互物理接触。 选择接触的持续时间和接触压力，以便于由两个表面之间的有吸引力的范德华力引起的两个基板表面之间的接合。 将粘合的基材加热到适度的温度以实现可被基底捕获的气体逸出。 然后通常去除其中一个底物的大部分。 可以将衬底再次加热到适度的温度，以除去残留在衬底上的任何气体。 然后，将接合面加热至高温，进行永久接合。