公开(公告)号：US20030057438A1

公开(公告)日：2003-03-27

申请号：US09960402

申请日：2001-09-24

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Dirk C. Jordan

IPC: H01L029/76 ,  H01L029/04

CPC classification number: H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include the use lateral epitaxial overgrowth to facilitate production of a high quality monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括使用横向外延过度生长以促进高质量单晶材料层的制备。

公开(公告)号：US20020072253A1

公开(公告)日：2002-06-13

申请号：US09983854

申请日：2001-10-26

Applicant: MOTOROLA, INC.

Inventor： John L. Edwards JR. ,  Yi Wei ,  Dirk C. Jordan ,  Xiaoming Hu ,  James Bradley Craigo ,  Ravindranath Droopad ,  Zhiyi Yu ,  Alexander A. Demkov

IPC: H01L021/26 ,  H01L021/324 ,  H01L021/302 ,  H01L021/42 ,  H01L021/477 ,  H01L021/461

CPC classification number: C30B25/18 ,  C30B33/00 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31111 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract translation: 提供了从单晶衬底的表面去除非晶氧化物的方法。 该方法包括沉积覆盖无定形氧化物的钝化材料。 然后加热单晶衬底，使得无定形氧化物层分解成从表面释放出的至少一种挥发性物质。

公开(公告)号：US20030089921A1

公开(公告)日：2003-05-15

申请号：US09986899

申请日：2001-11-13

Applicant: MOTOROLA, INC

Inventor： Dirk C. Jordan ,  Daniel S. Marshall

IPC: H01L031/0328

CPC classification number: H01L31/1852 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L31/0324 ,  H01L31/1836 ,  Y02E10/544 ,  Y02P70/521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer comprising a layer of monocrystalline oxide having a niobium concentration that provides for substantial lattice matching of the accommodating buffer layer to the overlying monocrystalline material layer. The monocrystalline oxide of the accommodating buffer layer is selected to be lattice matched to the underlying monocrystalline substrate. The accommodating buffer layer may be spaced apart from the underlying monocrystalline substrate by an amorphous interface layer. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 柔性衬底包括容纳缓冲层，其包含具有铌浓度的单晶氧化物层，其提供容纳缓冲层与上覆单晶材料层的实质晶格匹配。 选择容纳缓冲层的单晶氧化物与下面的单晶衬底晶格匹配。 容纳缓冲层可以通过非晶界面层与下面的单晶衬底间隔开。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。

公开(公告)号：US20020163024A1

公开(公告)日：2002-11-07

申请号：US09849159

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Dirk C. Jordan ,  Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L21/02505 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02647

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion of the accommodating buffer layer via lateral epitaxial overgrowth.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层（26）晶格匹配。 单晶材料层通过侧向外延生长在外部生长在容纳缓冲层的至少一部分上。

公开(公告)号：US20020163010A1

公开(公告)日：2002-11-07

申请号：US09849172

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Ravindranath Droopad ,  Dirk C. Jordan ,  Zhiyi Yu

IPC: H01L031/0328

CPC classification number: C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/31691

Abstract: High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以生长宽带隙材料的高质量外延层（26），覆盖单晶衬底（22），例如大硅晶片。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物或氮化物层。 宽带隙材料层（26）可用于形成诸如高频器件的电子器件或诸如激光器和发光二极管的发光器件。

公开(公告)号：US20020144725A1

公开(公告)日：2002-10-10

申请号：US09832354

申请日：2001-04-10

Applicant: Motorola, Inc.

Inventor： Dirk C. Jordan ,  Barbara Foley Barenburg ,  Ravindranath Droopad

IPC: H01L031/00

CPC classification number: H01L31/0735 ,  H01L21/31641 ,  H01L21/31645 ,  H01L31/02167 ,  H01L31/055 ,  H01L31/0725 ,  H01L31/1836 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544

Abstract: Solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The solar cell structures also include a dye (110) to increase an efficiency of the solar cell.

Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的高质量外延层的单晶半导体材料的太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 太阳能电池结构还包括用于提高太阳能电池效率的染料（110）。