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12 条记录 (耗时 0.021 秒)

    Method for reducing rotational latency in a disc drive
    1.
    发明授权
    Method for reducing rotational latency in a disc drive 失效
    降低磁盘驱动器中旋转等待时间的方法

    公开(公告)号：US5570332A

    公开(公告)日：1996-10-29

    申请号：US449758

    申请日：1995-05-25

    申请人： Mark A. Heath ,  D. Christopher Pruett ,  Bang C. Nguyen

    发明人： Mark A. Heath ,  D. Christopher Pruett ,  Bang C. Nguyen

    IPC分类号： G06F3/06 ,  G11B19/02 ,  G11B19/20 ,  G11B21/08 ,  G11B27/10 ,  G11B7/00

    CPC分类号： G11B19/20 ,  G06F3/0601 ,  G11B19/02 ,  G11B27/105 ,  G11B5/5547 ,  G06F2003/0697

    摘要： The present invention is a method for decreasing rotational latency in systems which include a data retrieval element and a rotating medium. The method requires that the rotating medium be divided into a plurality of discrete angular regions. For each discrete angular region, a number of cylinders that may be traversed by the data retrieval element during a single revolution of the medium is identified. A rotational latency assigned to each discrete angular region based on a current location of the retrieval element. A command queue array is searched for a command that addresses a location within a range of cylinders determined by the number of cylinders in the discrete angular region having the smallest rotational latency. Finally, the command addressing a location in the range of cylinders in the selected discrete angular region of the medium is executed.

    摘要翻译： 本发明是一种在包括数据检索元件和旋转介质的系统中减小旋转等待时间的方法。 该方法要求旋转介质被分成多个离散角度区域。 对于每个离散角度区域，识别在介质的单次旋转期间可由数据检索元件遍历的多个气缸。 基于检索元件的当前位置分配给每个离散角度区域的旋转等待时间。 搜索命令队列阵列，该命令寻址由具有最小旋转等待时间的离散角区域中的气缸数确定的圆柱体范围内的位置。 最后，执行寻址在介质的选定的离散角度区域中的气缸范围内的位置的命令。

    Method and apparatus for forming a thin polymer layer on an integrated circuit structure
    4.
    发明授权
    Method and apparatus for forming a thin polymer layer on an integrated circuit structure 失效
    在集成电路结构上形成薄聚合物层的方法和装置

    公开(公告)号：US5958510A

    公开(公告)日：1999-09-28

    申请号：US583888

    申请日：1996-01-08

    申请人： Visweswaren Sivaramakrishnam ,  Bang C. Nguyen ,  Gayathri Rao ,  Stuardo Robles ,  Gary L. Fong ,  Vicente Lim ,  Peter W. Lee

    发明人： Visweswaren Sivaramakrishnam ,  Bang C. Nguyen ,  Gayathri Rao ,  Stuardo Robles ,  Gary L. Fong ,  Vicente Lim ,  Peter W. Lee

    IPC分类号： B05D7/24 ,  C23C16/44 ,  C23C16/452 ,  H01L21/312 ,  C23C16/00

    CPC分类号： B05D1/60 ,  C23C16/44 ,  C23C16/452 ,  H01L21/312

    摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

    摘要翻译： 公开了用于在半导体衬底上形成薄聚合物层的方法和装置。 在一个实施方案中，该方法和装置包括稳定的二聚聚对二甲苯材料的升华，这种气态二聚体材料的热解转化为反应性单体，以及任选地将得到的气体聚对二甲苯单体与一种或多种气态形式的可聚合材料混合 与聚对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。 还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制 在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。 还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。 进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量 足以防止气相中的聚合。

    Selective silicon nitride plasma etching
    6.
    发明授权
    Selective silicon nitride plasma etching 失效
    选择性氮化硅等离子体蚀刻

    公开(公告)号：US5188704A

    公开(公告)日：1993-02-23

    申请号：US700871

    申请日：1991-05-09

    申请人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

    发明人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31116

    摘要： A two step method of etching a silicon nitride layer carrying a surface oxygen film from a substrate in a plasma reactor employs the steps of (1) a breakthrough step of employing a plasma of oxygen free etchant gases to break through and to remove the surface oxygen containing film from the surface of the silicon nitride layer, and (2) a main step of etching the newly exposed silicon nitride with etchant gases having high selectivity with respect to the silicon oxide underlying the silicon nitride. The plasma etching can be performed while employing magnetic-enhancement of the etching. The plasma etching is performed in a plasma reactor comprising a low pressure, single wafer tool. Plasma etching is performed while employing magnetic-enhancement of the etching. The etchant gases include a halide such as a bromide and a fluoride in the breakthrough step. The etchant gases include an oxygen and bromine containing gas in the main step.

    摘要翻译： 在等离子体反应器中从衬底上刻蚀载有表面氧膜的氮化硅层的两步法是采用以下步骤：（1）采用无氧蚀刻剂气体的等离子体穿透并除去表面氧的突破步骤 （2）主要步骤，用氮化硅下面的氧化硅对具有高选择性的蚀刻剂气蚀刻新曝光的氮化硅。 可以在使用蚀刻的磁性增强的同时进行等离子体蚀刻。 等离子体蚀刻在包括低压单晶片工具的等离子体反应器中进行。 在进行蚀刻的磁加强的同时进行等离子体蚀刻。 在突破步骤中，蚀刻气体包括卤化物如溴化物和氟化物。 在主要步骤中，蚀刻剂气体包括含氧和溴的气体。

    Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
    9.
    发明授权
    Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor 有权
    具有压力控制和过程监控的改进化学机械平面化垫的方法和装置

    公开(公告)号：US07530880B2

    公开(公告)日：2009-05-12

    申请号：US11576944

    申请日：2005-10-05

    申请人： Rajeev Bajaj ,  Natraj Narayanswami ,  Bang C. Nguyen

    发明人： Rajeev Bajaj ,  Natraj Narayanswami ,  Bang C. Nguyen

    IPC分类号： B24B49/00

    CPC分类号： B24B37/22 ,  B23H5/08 ,  B24B49/105 ,  B24B49/16

    摘要： A pad for CMP operations includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of pressure-sensing and process monitoring polishing elements each affixed to the compressible under-layer and passing through a corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate.

    摘要翻译： 用于CMP操作的焊盘包括其中具有多个孔并被附着到可压缩底层的引导板; 以及多个压力感测和过程监控抛光元件，每个抛光元件均固定到可压缩底层并穿过导板中的相应孔，以便相对于可压缩底层维持在基本垂直的方向，但是 可相对于导板在垂直方向上平移。

    Method and Apparatus for Improved Chemical Mechanical Planarization Pad with Pressure Control and Process Monitor
    10.
    发明申请
    Method and Apparatus for Improved Chemical Mechanical Planarization Pad with Pressure Control and Process Monitor 有权
    用于压力控制和过程监控的改进化学机械平面化垫的方法和装置

    公开(公告)号：US20080268760A1

    公开(公告)日：2008-10-30

    申请号：US11576944

    申请日：2005-10-05

    申请人： Rajeev Bajaj ,  Natraj Narayanswami ,  Bang C. Nguyen

    发明人： Rajeev Bajaj ,  Natraj Narayanswami ,  Bang C. Nguyen

    IPC分类号： B24D11/00 ,  B24B49/00

    CPC分类号： B24B37/22 ,  B23H5/08 ,  B24B49/105 ,  B24B49/16

    摘要： A pad for CMP operations includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of pressure-sensing and process monitoring polishing elements each affixed to the compressible under-layer and passing through a corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate.

    摘要翻译： 用于CMP操作的焊盘包括其中具有多个孔并被附着到可压缩底层的引导板; 以及多个压力感测和过程监控抛光元件，每个抛光元件均固定到可压缩底层并穿过导板中的相应孔，以便相对于可压缩底层维持在基本垂直的方向，但是 可相对于导板在垂直方向上平移。