Abstract:
A silicon-based optical modulator exhibiting improved modulation efficiency and control of “chirp” (i.e., time-varying optical phase) is provided by separately biasing a selected, first region of the modulating device (e.g., the polysilicon region, defined as the common node). In particular, the common node is biased to shift the voltage swing of the silicon-based optical modulator into its accumulation region, which exhibits a larger change in phase as a function of applied voltage (larger OMA) and improved extinction ratio. The response in the accumulation region is also relatively linear, allowing for the chirp to be more easily controlled. The electrical modulation input signal (and its inverse) are applied as separate inputs to the second region (e.g., the SOI region) of each arm of the modulator.
Abstract:
A silicon-based optical modulator exhibiting improved modulation efficiency and control of “chirp” (i.e., time-varying optical phase) is provided by separately biasing a selected, first region of the modulating device (e.g., the polysilicon region, defined as the common node). In particular, the common node is biased to shift the voltage swing of the silicon-based optical modulator into its accumulation region, which exhibits a larger change in phase as a function of applied voltage (larger OMA) and improved extinction ratio. The response in the accumulation region is also relatively linear, allowing for the chirp to be more easily controlled. The electrical modulation input signal (and its inverse) are applied as separate inputs to the second region (e.g., the SOI region) of each arm of the modulator.
Abstract:
A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.
Abstract:
A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.
Abstract:
A configuration for routing electrical signals between a conventional electronic integrated circuit (IC) and an opto-electronic subassembly is formed as an array of signal paths carrying oppositely-signed signals on adjacent paths to lower the inductance associated with the connection between the IC and the opto-electronic subassembly. The array of signal paths can take the form of an array of wirebonds between the IC and the subassembly, an array of conductive traces formed on the opto-electronic subassembly, or both.
Abstract:
A semiconductor-based optical modulator is presented that includes a separate phase control section to adjust the amount of chirp present in the modulated output signal. At least one section is added to the modulator configuration and driven to create a pure “phase” signal that will is added to the output signal and modify the eiφ term inherent in the modulation function. The phase modulation control section may be located within the modulator itself (with one segment on each arm, driven by the same input signal), or may be disposed “outside” of the modulator on either the input waveguiding section or the output waveguiding section. The phase control section may be formed to comprise multiple segments (of different lengths), with the overall phase added to the propagating signal controlled by selecting the different segments to be energized to impart a phase delay to a signal propagating through the energized section(s).
Abstract:
An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.
Abstract:
An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.
Abstract:
A silicon-based optical modulator is configured as a multi-segment device that utilizes a modified electrical data input signal format to address phase modulation nonlinearity and attenuation problems associated with free-carrier dispersion-based modulation. The modulator is formed to include M separate segments and a digital signal encoder is utilized to convert an N bit input data signal into a plurality of M drive signals for the M modulator segments, where M≧2N/2. The lengths of the modulator segments may also be adjusted to address the nonlinearity and attenuation problems. Additional phase adjustments may be utilized at the output of the modulator (beyond the combining waveguide).
Abstract:
A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.