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    Vacuum-type electrical switching apparatus
    3.
    发明申请
    Vacuum-type electrical switching apparatus 有权
    真空式电气开关装置

    公开(公告)号：US20060126257A1

    公开(公告)日：2006-06-15

    申请号：US11344284

    申请日：2006-01-31

    申请人： James Domo ,  Lance Sabados ,  Steven Randazzo ,  Roderick Mosely ,  Joseph Oeschger ,  Mary Montesclaros

    发明人： James Domo ,  Lance Sabados ,  Steven Randazzo ,  Roderick Mosely ,  Joseph Oeschger ,  Mary Montesclaros

    IPC分类号： H01H47/00

    CPC分类号： H01H33/668

    摘要： A vacuum-type electrical switching apparatus (10) for high voltage electrical power. A vacuum pressure condition in a vacuum pressure space (21) surrounding electrical contact points (18) is monitored and movement of the contact points between open and closed positions is automatically prevented when the pressure exceeds a predetermined threshold in order to avoid destructive arcing between the points. A sensor (32) provides a vacuum signal (34) responsive to the vacuum pressure condition. A controller (36) automatically inhibits movements of the contact points when the vacuum signal indicates that the vacuum has degraded. A contactor (38) may be placed in series with power supply (28) and a solenoid (24) used to move the contact points, with the contactor being automatically opened by the controller in response to the degraded vacuum condition. An electromechanical opening inhibitor (74) may be energized by the controller to mechanically prevent the contact points from being moved in response to the degraded vacuum condition.

    摘要翻译： 一种用于高压电力的真空型电气开关装置（10）。 监测围绕电接触点（18）的真空压力空间（21）中的真空压力状态，并且当压力超过预定阈值时，自动防止在打开和关闭位置之间的接触点的移动，以避免在 积分 传感器（32）根据真空压力条件提供真空信号（34）。 当真空信号表示真空已经降级时，控制器（36）自动禁止接触点的移动。 接触器（38）可以与电源（28）和用于移动接触点的螺线管（24）串联放置，接触器响应于劣化的真空条件被控制器自动打开。 机电开启抑制器（74）可以由控制器激励以机械地防止接触点响应于劣化的真空条件而被移动。

    Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching device
    4.
    发明申请
    Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching device 有权
    用于在真空开关装置中对高压条件进行声波检测的方法和装置

    公开(公告)号：US20070089521A1

    公开(公告)日：2007-04-26

    申请号：US11241087

    申请日：2005-09-30

    申请人： Roderick Mosely ,  Steven Randazzo ,  Li Lei ,  Ernest Bestel

    发明人： Roderick Mosely ,  Steven Randazzo ,  Li Lei ,  Ernest Bestel

    IPC分类号： G01L11/00

    CPC分类号： B06B3/00 ,  H01H33/668 ,  H01H2033/6686

    摘要： A method and apparatus for detecting a high pressure condition within an interrupter includes introducing high intensity ultrasonic sound into the outer wall of a vacuum interrupter through a sonic wave guide, then listening for the reflected and retransmitted response signals. The characteristics of the response signals are utilized to determine the pressure within the interrupter, and to determine when an unwanted high pressure condition exists.

    摘要翻译： 用于检测断路器内的高压条件的方法和装置包括通过声波引导器将高强度超声波引入真空断路器的外壁，然后监听反射和重传的响应信号。 响应信号的特性用于确定断路器内的压力，并确定何时存在不需要的高压条件。

    End point detection for sputtering and resputtering
    9.
    发明申请
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US20050173239A1

    公开(公告)日：2005-08-11

    申请号：US10659902

    申请日：2003-09-11

    申请人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    发明人： Sasson Somekh ,  Marc Schweitzer ,  John Forster ,  Zheng Xu ,  Roderick Mosely ,  Barry Chin ,  Howard Grunes

    IPC分类号： C23C14/04 ,  C23C14/16 ,  C23C14/32 ,  C23C14/54 ,  C23C14/58 ,  G01N21/68 ,  H01J37/32 ,  H01L21/285 ,  H01L21/66 ,  H01L21/768

    CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
    10.
    发明授权
    Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering 失效
    通过闭环电压控制的反应溅射形成金属化合物的化学计量层的方法和装置

    公开(公告)号：US5108569A

    公开(公告)日：1992-04-28

    申请号：US746302

    申请日：1991-08-13

    申请人： Haim Gilboa ,  Roderick Mosely ,  Hiroji Hanawa

    发明人： Haim Gilboa ,  Roderick Mosely ,  Hiroji Hanawa

    IPC分类号： C23C14/00 ,  H01J37/32 ,  H01L21/285

    CPC分类号： H01J37/3244 ,  C23C14/0063 ,  H01L21/2855

    摘要： Process and apparatus are disclosed for forming a layer of a stoichiometric metal compound on a semiconductor wafer by reactive sputtering a metal target in a chamber in the presence of a reactive gas, wherein the negative potential on a metal target is increased or decreased to change the supply of sputtered metal atoms available to react with the atoms of the reactive gas at a fixed flow of the gas by resetting the power level of a constant power source electrically connected to the target and a path is provided for the flow of reactive gas to the zone between the target and the wafer, while restricting the travel of the stoichiometric metal compound being formed from the zone to thereby provide a stoichiometric ratio of sputtered metal atoms and reactive gas atoms adjacent the wafer to form the stoichiometric metal compound on the wafer.The target potential is raised or lowered by resetting the power level of a constant power source by feeding a target voltage monitor signal back to the constant power source as a power level set signal, while the reactive gas path is provided by a series of nested members which provide a path for the reactive gas while restricting the backflow of the stoichiometric metal compound being formed.

    摘要翻译： 公开了用于在半导体晶片上形成化学计量金属化合物层的方法和装置，其中在反应气体存在下，通过在室内反应溅射金属靶，其中金属靶上的负电位增加或减小，以改变 通过重置电连接到目标和路径的恒定电源的功率电平，可以提供可在固定气体流中与反应气体的原子反应的溅射金属原子，用于将反应气体流动到 同时限制由该区域形成的化学计量的金属化合物的行程，从而提供与晶片相邻的溅射金属原子和反应气体原子的化学计量比，以在晶片上形成化学计量的金属化合物。 通过将目标电压监视器信号反馈回恒定电源作为功率电平设定信号来复位恒定电源的功率电平来提高或降低目标电位，而反应气体路径由一系列嵌套构件提供 其提供了反应气体的路径，同时限制了所形成的化学计量的金属化合物的回流。