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    MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE
    2.
    发明申请
    MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE 审中-公开
    机械量子测量装置，半导体器件，检测装置和模块

    公开(公告)号：US20140042566A1

    公开(公告)日：2014-02-13

    申请号：US14112626

    申请日：2011-04-21

    申请人： Hiroyuki Ota ,  Kisho Ashida ,  Kentaro Miyajima

    发明人： Hiroyuki Ota ,  Kisho Ashida ,  Kentaro Miyajima

    IPC分类号： H01L41/04

    CPC分类号： H01L41/04 ,  G01B7/18 ,  G01L1/2206 ,  G01L1/2293 ,  G01M5/0033 ,  G01M5/0083

    摘要： A mechanical quantity measuring device (100) includes a semiconductor substrate (1) attached to a measured object so as to indirectly measure the mechanical quantity acting on the measured object; a measuring portion (7) capable of measuring a mechanical quantity acting on the semiconductor substrate (1) at a central part (1c) of the semiconductor substrate (1); and plural impurity diffused resistors (3a, 3b, 4a, 4b) forming a group (5) gathering closely to each other in at least one place, on an outer peripheral part (1e) outside the central part (1c) of the semiconductor substrate (1). The plural impurity diffused resistors (3a, 3b, 4a, 4b) forming one of the group (5) are connected to each other to form a Wheatstone bridge (2a, 2b). Thus, the mechanical quantity measuring device (100) can securely detect its own exfoliation.

    摘要翻译： 机械量测量装置（100）包括安装在测量对象上的半导体衬底（1），以间接地测量作用在测量对象上的机械量; 能够测量在半导体衬底（1）的中心部分（1c）处作用在半导体衬底（1）上的机械量的测量部分（7）; 以及在半导体基板的中心部分（1c）的外侧的外周部（1e）上形成形成在至少一个位置上彼此紧密聚集的组（5）的多个杂质扩散电阻器（3a，3b，4a，4b） （1）。 形成组（5）中的一个的多个杂质扩散电阻器（3a，3b，4a，4b）彼此连接以形成惠斯通电桥（2a，2b）。 因此，机械量测量装置（100）可以安全地检测其自身的剥离。

    Magnetic tape, its cleaning method, and optical servotrack forming/cleaning apparatus
    3.
    发明授权
    Magnetic tape, its cleaning method, and optical servotrack forming/cleaning apparatus 有权
    磁带，其清洁方法和光学伺服轨道成形/清洁装置

    公开(公告)号：US07803471B1

    公开(公告)日：2010-09-28

    申请号：US10343432

    申请日：2001-12-28

    申请人： Hiroyuki Ota ,  Haruhiko Fujisawa ,  Naoki Mukai ,  Satoru Fukiage ,  Kenji Sano ,  Shigeo Fujitani

    发明人： Hiroyuki Ota ,  Haruhiko Fujisawa ,  Naoki Mukai ,  Satoru Fukiage ,  Kenji Sano ,  Shigeo Fujitani

    IPC分类号： G11B5/706

    CPC分类号： G11B5/735 ,  G11B5/584 ,  G11B5/78 ,  G11B23/502

    摘要： A magnetic tape which comprises a nonmagnetic support, a magnetic layer which is formed on one surface of the nonmagnetic support, and a backcoat layer which comprises a binder and nonmagnetic powder containing carbon black as a component and which is formed on the other surface of the nonmagnetic support, having pits for optical servo formed thereon, characterized in that the average of the reflectance on the flat portion of the backcoat layer is 8.5% or higher, and that the maximum rate of fluctuation of the reflectance on the flat portion, depending on a position of the magnetic tape: [Maximum of absolute value of (Reflectance−Average reflectance)]×100/(Average reflectance) is 10% or lower. This magnetic tape is high in the initial S/N of the servo signal, and also high in the S/N of the servo signal found after the magnetic tape is run twice.

    摘要翻译： 一种磁带，其包括非磁性载体，形成在非磁性载体的一个表面上的磁性层，以及背涂层，其包含粘合剂和含有炭黑作为组分的非磁性粉末，并形成在所述非磁性载体的另一个表面上 非磁性支撑件，其上形成有用于光学伺服的凹坑，其特征在于，背涂层的平坦部分上的反射率的平均值为8.5％以上，平坦部分的反射率的最大波动率取决于 磁带的位置：[反射率平均反射率的绝对值的最大值]×100 /（平均反射率）为10％以下。 该磁带在伺服信号的初始S / N高，并且在磁带运行两次之后发现的伺服信号的S / N也较高。

    Semiconductor device with shallow trench isolation and its manufacture method
    4.
    发明授权
    Semiconductor device with shallow trench isolation and its manufacture method 失效
    具有浅沟槽隔离的半导体器件及其制造方法

    公开(公告)号：US07626234B2

    公开(公告)日：2009-12-01

    申请号：US11429962

    申请日：2006-05-09

    申请人： Kengo Inoue ,  Hiroyuki Ota

    发明人： Kengo Inoue ,  Hiroyuki Ota

    IPC分类号： H01L29/76

    CPC分类号： H01L21/76232 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/823878 ,  H01L29/7833

    摘要： A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

    摘要翻译： 半导体器件制造方法包括以下步骤：（a）在半导体衬底的表面上形成用于化学机械抛光的阻挡层; （b）在所述阻挡层和半导体衬底中形成元件隔离沟槽; （c）沉积覆盖所述沟槽的内表面的氮化物膜; （d）通过高密度等离子体CVD沉积第一氧化物膜，第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; （e）通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; （f）通过高密度等离子体CVD沉积第二氧化膜，第二氧化膜在洗出之后埋入沟槽; 和（g）通过化学机械抛光去除阻挡层上的氧化物膜。

    Information recording medium
    5.
    发明授权
    Information recording medium 失效
    信息记录介质

    公开(公告)号：US07594241B2

    公开(公告)日：2009-09-22

    申请号：US11453909

    申请日：2006-06-16

    申请人： Tetsuji Hasegawa ,  Hiroyuki Ota

    发明人： Tetsuji Hasegawa ,  Hiroyuki Ota

    IPC分类号： G11B7/24

    CPC分类号： G11B23/046 ,  G11B23/031

    摘要： In information recording medium of the present invention, a medium unit on which information signals are recorded is placed in an inner space of a main-body case, and an inherent marking for representing specific data for the medium unit is provided on the medium unit.

    摘要翻译： 在本发明的信息记录介质中，将记录有信息信号的介质单元放置在主体外壳的内部空间中，并且在介质单元上设置用于表示介质单元的特定数据的固有标记。

    Semiconductor light-emitting device and fabrication method thereof
    6.
    发明申请
    Semiconductor light-emitting device and fabrication method thereof 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20070059852A1

    公开(公告)日：2007-03-15

    申请号：US10577722

    申请日：2004-09-27

    申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kirofumi Chikuma

    发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kirofumi Chikuma

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

    摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

    摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

    Group III nitride compound semiconductor laser and manufacturing method thereof
    8.
    发明授权
    Group III nitride compound semiconductor laser and manufacturing method thereof 失效
    III族氮化物半导体激光器及其制造方法

    公开(公告)号：US06795471B2

    公开(公告)日：2004-09-21

    申请号：US10117095

    申请日：2002-04-08

    申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

    摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

    摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

    Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate
    9.
    发明授权
    Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate 失效
    用镀覆辅助金属基板制造氮化物半导体激光器的方法

    公开(公告)号：US06677173B2

    公开(公告)日：2004-01-13

    申请号：US09818941

    申请日：2001-03-28

    申请人： Hiroyuki Ota

    发明人： Hiroyuki Ota

    IPC分类号： H01L2100

    CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0425

    摘要： The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.

    摘要翻译： 本公开是一种制造氮化物半导体激光器的方法，其中由包括活性层的III族氮化物半导体制成的多个晶体层依次层叠在底层上。 该方法包括以下步骤：在形成在基板上的下层上形成多个晶体层，在晶体层的最外表面上形成电极层，将金属膜电镀在电极层上，照射基板与 通过衬底的光线穿过衬底，以形成氮化物半导体的分解物质的区域，沿着分解物质区域从衬底分层支撑晶体层的底层，并且用晶体层切割底层以形成 构成激光谐振器的解理平面。