摘要:
[Purpose] A purpose of the present invention is to provide a nonaqueous electrolyte secondary battery with high safety in which breakage of a positive electrode plate and buckling of a negative electrode plate are reduced during charging and discharging.[Solutions] A nonaqueous electrolyte secondary battery includes an electrode group 10 in which a positive electrode plate 4 including a positive electrode current collector 1 and a positive electrode material mixture layer 2a, 2b formed on the positive electrode current collector 1, and a negative electrode plate 8 including a negative electrode current collector 5 and a negative electrode material mixture layer 6a, 6b formed on the negative electrode current collector 8, are wound or stacked with a separator 9 interposed therebetween. The positive electrode material mixture layer 2a, 2b has at least one thin portion 3a, 3b extending perpendicularly to a longitudinal direction of the positive electrode plate 4.
摘要:
In an electrode plate 3 including a both-surface coated part 14 in which an active material layer 13 and a porous protective film 28 are formed, a core material exposed part 18 which is an end part of the current collector core material 12 and in which the active material layer 13 and the porous protective film 28 are not formed, and a one-surface coated part 17 which is provided between the both-surface coated part 14 and the core material exposed part 18 and in which the active material layer 13 and the porous protective film 28 are formed, a plurality of grooves 10 are formed in both surfaces of the both-surface coated part 14 and are not formed in the one-surface coated part 17. The grooves 10 are formed so that each of the grooves extends from the porous protective film 28 to the active material layer 13.
摘要:
An electrode plate includes a both-surface coated part 14 in which an electrode active material layer 13 is provided on both surfaces of a current collector core material 12, a core material exposed part 18 in which the negative electrode active material layer 13 is not provided, and a one-surface coated part 17 in which the negative electrode active material layer 13 is provided on only one surface of the current collector core material 12. A plurality of grooves 10 are formed in both surfaces of the both-surface coated part 14 and the grooves 10 are not formed in the one-surface coated part 17.
摘要:
An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.
摘要:
An electrode plate includes a both-surface coated part 14 in which an electrode active material layer 13 is provided on both surfaces of a current collector core material 12, a core material exposed part 18 in which the negative electrode active material layer 13 is not provided, and a one-surface coated part 17 in which the negative electrode active material layer 13 is provided on only one surface of the current collector core material 12. A plurality of grooves 10 are formed in both surfaces of the both-surface coated part 14 and the grooves 10 are not formed in the one-surface coated part 17.
摘要:
In an electrode plate 3 including a both-surface coated part 14 in which an active material layer 13 and a porous protective film 28 are formed, a core material exposed part 18 which is an end part of the current collector core material 12 and in which the active material layer 13 and the porous protective film 28 are not formed, and a one-surface coated part 17 which is provided between the both-surface coated part 14 and the core material exposed part 18 and in which the active material layer 13 and the porous protective film 28 are formed, a plurality of grooves 10 are formed in both surfaces of the both-surface coated part 14 and are not formed in the one-surface coated part 17. The grooves 10 are formed so that each of the grooves extends from the porous protective film 28 to the active material layer 13.
摘要:
A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.
摘要:
A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.
摘要:
A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.
摘要:
An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a phenolic resin, a hardening accelerator and an inorganic filler. The epoxy resin composition having the following properties (X) to (Z) does not cause the chip tilting attributable to resin flow during resin encapsulation, such as semiconductor element shifting or gold wire deformation, and can obtain highly reliable semiconductor devices: (X) the viscosity thereof as measured with a flow tester at 175° C. is from 50 to 500 P; (Y) the minimum melt viscosity thereof as determined from the temperature dependence of viscosity thereof as measured with a dynamic viscoelastic meter at a shear rate of 5 (1/s) is 1×105 poise or lower; and (Z) the ratio of the viscosity thereof as measured at 90° C. (Z1) to that as measured at 110° C. (Z2) both with a dynamic viscoelastic meter at a shear rate of 5 (1/s), (Z1/Z2), is 2.0 or higher.